BC556 MCC | Alldatasheet
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l 150oC Junction Temperature Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage BC556 BC557 BC558 VCEO -65 -45 -30 V Collector-Base Voltage BC556 BC557 BC558 VCBO -80 -50 -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current(DC) IC -100 mA Power Dissipation@TA=25oC Pd 625 5.0 mW mW/oC Power Dissipation@TC=25oC Pd 1.5 W mW/oC Thermal Resistance, Junction to Ambient Air 200 oC/W Thermal Resistance, Junction to Case 83.3 oC/W Operating & Storage Temperature Tj, TSTG -55~150 oC BC556,B BC557,A,B,C BC558,B PNP Silicon Amplifier Transistor 625mW TO-92 INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 A E B C D G DIMENSIONS www.mccsemi.com Pin Configuration Bottom View C B E R /C0113JC R /C0113JA /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents
21201 Itasca Street Chatsworth
/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CEO –65 –45 –30 V Collector–Base Breakdown Voltage (IC = –100 µAdc) BC556 BC557 BC558 V(BR)CBO –80 –50 –30 V Emitter–Base Breakdown Voltage (IE = –100 /C0109Adc, IC = 0) BC556 BC557 BC558 V(BR)EBO –5.0 –5.0 –5.0 V ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) BC557A BC556B/557B/558B BC557C (IC = –2.0 mAdc, VCE = –5.0 V) BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C (IC = –100 mAdc, VCE = –5.0 V) BC557A BC556B/557B/558B BC557C hFE 120 120 120 120 180 420 150 270 170 290 500 120 180 300 500 800 800 220 460 800 Collector–Emitter Saturation Voltage (IC = –100mAdc, IB = –5.0 mAdc) VCE(sat) — --- –0.3 V Base–Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0mAdc) VBE(sat) — –1.0— V Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) VBE(on) –0.55 –0.62 –0.7 –0.7 –0.82 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) BC556 BC557 BC558 fT 280 320 360 MHz Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) C ob — 3.0 6.0 pF MCC www.mccsemi.com BC556 thru BC558B