ICS556-04 RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Extremely low-skew outputs (50 ps maximum)
- Packaged in 8-pin SOIC
- Operating voltages of 2.5 to 5.0 V
- Low-power CMOS technology
- Industrial temperature range
- Pb (lead) free package Block Diagram X1/ICLK 5 to 27 MHz Crystal or clock Crystal Oscillator/ Buffer Optional crystal capacitors
LOW SKEW 1 TO 4 CLOCK BUFFER CRYSTAL BUFFER IDT™ / ICS™ LOW SKEW 1 TO 4 CLOCK BUFFER 2 ICS556-04 REV E 051310 Pin Assignment Pin Descriptions External Components A minimum number of external components are required for proper operation. A decoupling capacitor of 0.01 µF should be connected between VDD on pin 1 and GND on pin 4, as close to the device as possible. A 33Ω series terminating resistor may be used on each clock output if the trace is longer than 1 inch. To achieve the low output skew that the ICS556-04 is capable of, careful attention must be paid to board layout. Essentially, all four outputs must have identical terminations, identical loads, and identical trace geometries. If not, the output skew will be degraded. For example, using a 30Ω series termination on one output (with 33Ω on the others) will cause at least 15 ps of skew. Crystal Information The crystal used should be a fundamental mode (do not use third overtone), parallel resonant. Crystal capacitors should be connected from pins X1 to ground and X2 to ground to optimize the initial accuracy. The value of these capacitors is given by the following equation: Crystal caps (pF) = (CL - 6) x 2 In the equation, CL is the crystal load capacitance. So, for a crystal with a 16 pF load capacitance, two 20 pF [(16-6) x 2] capacitors should be used. X1/ICLK VDD GND 8-pin (150 mil) SOIC Pin Number Pin Name Pin Type Pin Description 1 VDD Power Connect to +2.5 V, +3.3 V or +5.0 V. 2 X1/ICLK Input Crystal or clock input (5 V tolerant input). Connect to 5 to 27 MHz input. 3 X2 Input Connect to a fundamental mode crystal. Leave open for clock input. 4 GND Power Connect to ground. 5 Q1 Output Clock Output 1. 6 Q2 Output Clock Output 2. 7 Q3 Output Clock Output 3. 8 Q4 Output Clock Output 3.
LOW SKEW 1 TO 4 CLOCK BUFFER CRYSTAL BUFFER IDT™ / ICS™ LOW SKEW 1 TO 4 CLOCK BUFFER 3 ICS556-04 REV E 051310 Absolute Maximum Ratings Stresses above the ratings listed below can cause permanent damage to the ICS556-04. These ratings, which are standard values for IDT commercially rated parts, are stress ratings only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical parameters are guaranteed only over the recommended operating temperature range. Recommended Operation Conditions VDD=2.5 V ±5%, Ambient temperature -40 to +85 ° C, unless stated otherwise Item Rating Supply Voltage, VDD 7 V Output Enable and All Outputs -0.5 V to VDD+0.5 V ICLK -0.5 V to 5.5 V Ambient Operating Temperature -40 to +85 ° C Storage Temperature -65 to +150 ° C Junction Temperature 125 ° C Soldering Temperature 260 ° C Parameter Min. Typ. Max. Units Ambient Operating Temperature -40 +85 ° C Power Supply Voltage (measured in respect to GND) +2.375 +5.25 V Parameter Symbol Conditions Min. Typ. Max. Units Operating Voltage VDD 2.375 2.625 V Input High Voltage V IH 2.0 V Input Low Voltage V IL 0.8 V Output High Voltage V OH IOH = -12 mA 2 V Output Low Voltage V OL IOL = 12 mA 0.4 V Operating Supply Current IDD No load, 27MHz 25 mA Nominal Output Impedance Z O 20 Ω Short Circuit Current I OS ±28 mA
LOW SKEW 1 TO 4 CLOCK BUFFER CRYSTAL BUFFER IDT™ / ICS™ LOW SKEW 1 TO 4 CLOCK BUFFER 4 ICS556-04 REV E 051310 VDD=3.3 V ±5% , Ambient temperature -40 to +85 ° C, unless stated otherwise VDD=5 V ±5% , Ambient temperature -40 to +85 ° C, unless stated otherwise Notes: 1. Nominal switching threshold is VDD/2 Parameter Symbol Conditions Min. Typ. Max. Units Operating Voltage VDD 3.15 3.45 V Input High Voltage V IH 2.0 V Input Low Voltage V IL 0.8 V Output High Voltage V OH IOH = -25 mA 2.4 V Output Low Voltage V OL IOL = 25 mA 0.4 V Output High Voltage (CMOS Level) VOH IOH = -12 mA VDD-0.4 V Operating Supply Current IDD No load, 27 MHz 35 mA Nominal Output Impedance Z O 20 Ω Short Circuit Current I OS ±50 mA Parameter Symbol Conditions Min. Typ. Max. Units Operating Voltage VDD 4.75 5.25 V Input High Voltage V IH 2.0 V Input Low Voltage V IL 0.8 V Output High Voltage V OH IOH = -35 mA 2.4 V Output Low Voltage V OL IOL = 35 mA 0.4 V Output High Voltage (CMOS Level) VOH IOH = -12 mA VDD-0.4 V Operating Supply Current IDD No load, 27 MHz 45 mA Nominal Output Impedance Z O 20 Ω Short Circuit Current I OS ±80 mA
LOW SKEW 1 TO 4 CLOCK BUFFER CRYSTAL BUFFER IDT™ / ICS™ LOW SKEW 1 TO 4 CLOCK BUFFER 5 ICS556-04 REV E 051310 VDD = 2.5 V ±5%, Ambient Temperature -40 to +85 ° C, unless stated otherwise VDD = 3.3 V ±5%, Ambient Temperature -40 to +85 ° C, unless stated otherwise VDD = 5 V ±5%, Ambient Temperature -40 to +85 ° C, unless stated otherwise Notes: 1. Between any two outputs with equal loading. Thermal Characteristics Parameter Symbol Conditions Min. Typ. Max. Units Input Frequency 5 27 MHz Output Rise Time t OR 0.8 to 2.0 V, CL=15 pF 1.8 2.5 ns Output Fall Time t OF 2.0 to 0.8 V, CL=15 pF 1.8 2.5 ns Output to output skew Note 1 Rising edges at VDD/2 0 50 ps Duty Cycle Measured at VDD/2 45 50 55 % Parameter Symbol Conditions Min. Typ. Max. Units Input Frequency 5 27 MHz Output Rise Time t OR 0.8 to 2.0 V, CL=15 pF 0.6 1.0 ns Output Fall Time t OF 2.0 to 0.8 V, CL=15 pF 0.6 1.0 ns Output to output skew Note 1 Rising edges at VDD/2 0 50 ps Duty Cycle Measured at VDD/2 45 50 55 % Phase Noise at 1MHz from carrier -125 dBc/Hz Clock Jitter RMS 1KHz to 1MHz 6 ps Parameter Symbol Conditions Min. Typ. Max. Units Input Frequency 5 27 MHz Output Rise Time t OR 0.8 to 2.0 V, CL=15 pF 0.3 0.7 ns Output Fall Time t OF 2.0 to 0.8 V, CL=15 pF 0.3 0.7 ns Output to output skew Note 1 Rising edges at VDD/2 0 50 ps Duty Cycle Measured at VDD/2 45 50 55 % Parameter Symbol Conditions Min. Typ. Max. Units Thermal Resistance Junction to Ambient θJA Still air 150 ° C/W θJA 1 m/s air flow 140 ° C/W θJA 3 m/s air flow 120 ° C/W Thermal Resistance Junction to Case θJC 40 ° C/W
LOW SKEW 1 TO 4 CLOCK BUFFER CRYSTAL BUFFER IDT™ / ICS™ LOW SKEW 1 TO 4 CLOCK BUFFER 6 ICS556-04 REV E 051310 Package Outline and Package Dimensions (8-pin SOIC, 150 Mil. Narrow Body) Package dimensions are kept current with JEDEC Publication No. 95
Ordering Information
“LF” denotes Pb free package. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications such as those requiring extended temperature range, high reliability, or other extraordinary environmental requirements are not recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. Part / Order Number Marking Shipping Packaging Package Temperature 556M-04ILF 556M04IL Tubes 8-pin SOIC -40 to +85 ° C 556M-04ILFT 556M04IL Tape and Reel 8-pin SOIC -40 to +85 ° C INDEX AREA 1 2 D E SEATING PLANE A e - C - B .10 (.004) C C L H h x 45 Millimeters Inches Symbol Min Max Min Max A 1.35 1.75 .0532 .0688 A1 0.10 0.25 .0040 .0098 B 0.33 0.51 .013 .020 C 0.19 0.25 .0075 .0098 D 4.80 5.00 .1890 .1968 E 3.80 4.00 .1497 .1574 e 1.27 BASIC 0.050 BASIC H 5.80 6.20 .2284 .2440 h 0.25 0.50 .010 .020 L 0.40 1.27 .016 .050 α 0° 8° 0° 8°
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