FMMT555_03 ZETEX | Alldatasheet

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Technical content

ISSUE 4 – AUGUST 2003

FEATURES

  • 150 Volt V CEO * 1 Amp continuous current COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -160 V Collector-Emitter Voltage V CEO -150 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Base Current I B -200 mA Power Dissipation at Tamb = 25°C P tot 500 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -160 V IC=-100/G01 A Collector-Emitter Breakdown Voltage V (BR)CEO -150 V I C=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100/G01 A Collector Cut-Off Current I CBO -0.1 -10 /G01 A /G01 A VCB =-140V VCB =-140V, Tamb =100°C Emitter Cut-Off Current I EBO -0.1 /G01 A VEB=-4V Collector-Emitter Saturation Voltage V CE(sat) -0.3 V I C=-100mA, IB=-10mA* Base-Emitter Saturation Voltage V BE(sat) -1 V I C=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V I C=-100mA, VCE =-10V* Static Forward Current Transfer Ratio h FE 50 50 300 I C=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* Transition Frequency f T 100 MHz I C=-50mA, VCE =-10V f=100MHz Output Capacitance C obo 10 pF V CB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300 /G01 s. Duty cycle /G02 2% Spice parameter data is available upon request for this device FMMT555 C B E SOT23 3 - 1313 - 132 FMMT555 TYPICAL CHARACTERISTICS VCE(sat)vIC IC -Collector Current (Amps) VCE(sat) -(Volts) IC -Collector Current (Amps) IC -Collector Current (Amps) hFE vIC VBE(sat)vIC IC -Collector Current (Amps) VBE(on) vIC hFE -NormalisedGain(%) VBE(sat) -(Volts) VBE -(Volts) Single Pulse Test at Tamb=25°C 100 0 -1 -0.2 -0.4 -0.6 -0.8 Switching Speeds IC -Collector Current (Amps) Switchingtime IC /IB=10 VCE =-10V -0.1 -1 IB1=IB2=IC /10 -0.01 ZTX554/ 55-2 ts tf td tr ts µs tr ns 300 200 100 400 500 tf ns 600 400 200 800 1000 td ns 100 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 IC /IB=10 -1.0 -1.2 -1.4 -0.8 VCE =-10V IC-Collector Current (A) 0.1 Safe Operating Area VCE - Collector Emitter Voltage (V) 10V 100V DC 100ms 10ms 100/G01 s 1ms 0.01 0.001 0.1V 1000V

ISSUE 3 – JANUARY 1996

  • 150 Volt V CEO * 1 Amp continuous current COMPLEMENTARY TYPE – FMMT455 PARTMARKING DETAIL – 555 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -160 V Collector-Emitter Voltage V CEO -150 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -2 A Continuous Collector Current I C -1 A Base Current I B -200 mA Power Dissipation at Tamb = 25°C P tot 500 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -160 V IC=-100/G01 A Collector-Emitter Breakdown Voltage V (BR)CEO -150 V I C=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100/G01 A Collector Cut-Off Current I CBO -0.1 -10 /G01 A /G01 A VCB =-140V VCB =-140V, Tamb =100°C Emitter Cut-Off Current I EBO -0.1 /G01 A VEB=-4V Collector-Emitter Saturation Voltage V CE(sat) -0.3 V I C=-100mA, IB=-10mA* Base-Emitter Saturation Voltage V BE(sat) -1 V I C=-100mA, IB=-10mA* Base-Emitter Turn-on Voltage VBE(on) -1 V I C=-100mA, VCE =-10V* Static Forward Current Transfer Ratio h FE 50 50 300 I C=-10mA, VCE =-10V* IC=-300mA, VCE =-10V* Transition Frequency f T 100 MHz I C=-50mA, VCE =-10V f=100MHz Output Capacitance C obo 10 pF V CB =-10V, f=1MHz * Measured under pulsed conditions. Pulse width=300 /G01 s. Duty cycle /G02 2% Spice parameter data is available upon request for this device FMMT555 C B E SOT23 3 - 1313 - 132 FMMT555 TYPICAL CHARACTERISTICS VCE(sat)vIC IC -Collector Current (Amps) VCE(sat) -(Volts) IC -Collector Current (Amps) IC -Collector Current (Amps) hFE vIC VBE(sat)vIC IC -Collector Current (Amps) VBE(on) vIC hFE -NormalisedGain(%) VBE(sat) -(Volts) VBE -(Volts) Single Pulse Test at Tamb=25°C 100 0 -1 -0.2 -0.4 -0.6 -0.8 Switching Speeds IC -Collector Current (Amps) Switchingtime IC /IB=10 VCE =-10V -0.1 -1 IB1=IB2=IC /10 -0.01 ZTX554/ 55-2 ts tf td tr ts µs tr ns 300 200 100 400 500 tf ns 600 400 200 800 1000 td ns 100 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 IC /IB=10 -1.0 -1.2 -1.4 -0.8 VCE =-10V IC-Collector Current (A) 0.1 Safe Operating Area VCE - Collector Emitter Voltage (V) 10V 100V DC 100ms 10ms 100/G01 s 1ms 0.01 0.001 0.1V 1000V