54F2645PCQR

54F2640 NSC | Alldatasheet

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. 9: ZANational veyron | ao 54F/74F2640 © 54F/74F2643 ¢ 54F/74F2645 42 Octal Bus Transceiver with 252 Series Resistors in the 3° Se Outputs Qa 38> General Description Features = a These devices are octal bus transceivers designed for asyn- _™ 250 series resistors in the outputs eliminates the need | @ Ni chronous two-way data flow between the A and B busses. for external resistors a+ These devices are functionally equivalent to the "F640, m Designed for asynchronous two-way data flow between = n ‘F643, and 'F645. The 252 series resistors in the outputs busses = oO reduce ringing and eliminate the need for external resistors. Outputs sink 12 mA and source 15 mA sz Both busses are capable of sinking 12 mA, sourcing 15 mA, Transmit/receive (T/R) input controls the direction of | Ay © have TRI-STATE outputs, and a common output enable pin. data flow oe cove (IR) input there ea ean merece fh Guaranteed 4000V minimum ESD protection la cei . versi ; , ; : F F2645. The 'F2643 has a noninverting A bus and an invert. F2645 is a low power version of the ‘F245 with 250 | gy a A , ., s series resistors in the outputs oO ing B bus. The 'F2645 is a low power version of the "F245 SE ee SSRIO'S I” f the "E2645 an with 250 series resistors in the outputs. . 0 is an inverting option of the ‘F264: =~ m 'F2643 has noninverting A bus and inverting B bus 3 psy ES HBS noriinvlrring A BUS and inverting B bus a mwN oS Logic Symbol Connection Diagrams a? Pin Assignment for @ By 8, By Bs By By Be B DIP, SOIC and Flatpak _ vi RoI 20 Yee 4 A Ay Ag As Ag A; roy? 's oe © Ay At Ar As Aa As A Ay neds 7 ew 5 As 17-8, ec ‘TL/F/10629-1 - Ags 16-8, s Unit Loading/Fan Out Ms 15) 8s c sq? 14-8, a as spo Description UL. Input hy/lit As 12}-B, HIGH/LOW | Output lou/loL GND 10 1-8, OE Output Enable Input (Active LOW) 1.0/1.0 20 wA/—0.6 mA TL/F/10629-2 wR Transmit/Receive Input 1.0/1.0 20 wA/—0.6 mA Ag-A7 Side A Inputs or 3.5/0.667 | 70 pA/~0.4mA Pin Assignment for LCC and PCC TRI-STATE Outputs 750/20 —15 mA/12 mA Ae As Ay As Ap Bo-B7 Side B Inputs or 3.5/0.667 | 70 nA/—0.4mA Boe TRI-STATE Outputs 750/20 —15 mA/12 mA ray) oa ‘ND Ag ji 8, ove

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|| FAST® and TRLSTATE® are registered trademarks of Natonal Semiconductor Corporation ©1990 National Semiconductor Corporation TL/F/10629 | ‘RO-820M120/Printed in U.S.A.

The output enable (OE) is active LOW. If the device is dis- abled (OE HIGH), the outputs are in the high impedance state. The transmit/receive input (T/R) controls whether data is transmitted from the A bus to the B bus or from the B bus to the A bus. When T/R is LOW, B data is sent to the A bus. If T/R is HIGH, A data is sent to the B bus. Function Table [oe [rm] zoo [zens raeas | Bus B data to Bus A | Bus B data to Bus A | Bus B data to Bus A Bus A data to Bus B [etx fe [ee H = High voltage level L = Low voltage level X = Don't care Z = High-impedance state Logic Diagrams "F2640 4 ” a As Ms As Ws Ay rahahahalanraiar TEST JA YR YA A TA TAT vk 8 8 & Bs & 8s & % TL/F/10629-4 "F2643 » M a As M as Ms a Rrahahanahatarraly TESIAYA TATA TATA TAT Bo 8 8 8s % Bs % % TLIF/10629-5 °F 2645 ” a h As M bs 6 A Rhahahahahananaly TESA TAA TTA JIA TA TAT 8 a 8 By % 85 &% 8 TUF /10629-6

Absolute Maximum Ratings (note 1) If Military/Aerospace specified devices are required, Current Applied to Output please contact the National Semiconductor Sales in LOW State (Max) twice the rated Io, (mA) Office/Distributors for availability and specifications. ESD Last Passing Voltage (Min) 4000V Storage Temperature ~65°C to + 150°C Note 1: Absolute maximum ratings are values beyond which the device may 1 55 0 be damaged or have its useful life impaired. Functional operation under Ambient Temperature undor Bias SSC to + 126° roe oe ave, te usoh Junction Temperature under Bias —55°C to + 175°C Note 2: Either voltage limit or current limit is sufficient to protect inputs. Voc Pin Potential to Ground Pin —0.5V to +7.0V Recommended Operating Input Voltage (Note 2) ~0.5V to +7.0V Conditions Input Current (Note 2) ~30 mA to +5.0mA Free Air Ambient Temperature Voltage Applied to Output Military ~55°C to + 125°C in HIGH State (with Veg = OV) Commercial OC to +70°C Standard Output =0.5V to Veg su _ pply Voltage TRI-STATE Output 0.5V to +5.5V Miltary +45Vto +58V Commercial +4.5V to +5.5V Min Typ Max Vi Input HIGH Voltage [ 20, SsTsSv =| __| Recognizedas aHIGH Signal Vit Input LOW Voltage [SS | | ‘| Recognizedas a LOW Signal Veo Input Clamp Diode Voltage [2 |v | Min | ty = ~18 mA (Nont/0 Pins) Vox Output HIGH 84F 10% Voc V loH = —12mA (An, Bn) Voltage 74F 10% Voc lou = —15MA (Ap, Bn) Vow Output LOW 74F 10% Voc oso | fo. = 1MA (An, Bn) Voltage TAF 10% Voc 0.75 lon = 12 MA (An. Br) rm Input HIGH 54F A Vin = 2.7V (Non I/O Pins) Current 74F » levi Input HIGH Current 54F 100 A Vin = 7.0V (Non i/0 Pins) Breakdown Test 74F 7.0 lpvit Input HIGH Current. 54F mA Vin = 5.8V (An, Bn) Breakdown (1/0) ___74F Icex Output HIGH 54F A Vout = Voc Leakage Current 74F bas Vio Input Leakage lip = 1.9 pA Test 74F 4.75 v All Other Pins Grounded lop Output Leakage Viop = 150 mv Circuit Current rar 375 | BA All Other Pins Grounded he Input LOW Current [S06 | = mA | Max | Vin = 0.5V(Noni/O Pins) li + lozi_| Output Leakage Current [850 [nA | Max | Vour = 0.5V (An, Bn) los Output Short-Circuit Current [=100 225 | ma | Max | Vour= ov locH Power Supply Current ('F2640) [82 STA | Max | Vo = HIGH, Vin = 0.2V loot Power Supply Ourent(‘Fa640) | 82 mA | Max | Vo = LOW looz Power Supply Current ('F2640) [85 | mA | Max | Vo=HIGHZ : loch Power Supply Current ('F2643) | 82 Som ‘| Max | Vo HIGH, Vin — 02V(Ay ! lect Power Supply Current ('F2643) [82 STA _| Max | Vo = LOW Vin = 02V08,) loot Power Supply Current ('F2645) ee looz Power Supply Current ('F2645) | 95 ma | Max | Vo = HIGHZ

’F2640 AC Electrical Characteristics: [ow ddd Ta = +25°C Ta, Voc = Mil Ta, Veo = Com Symbol Voc = +5.0V ‘S oe Units C, = 50pF C. = 50 pF Cy = 50 pF Min typ Max | win Max [Min Max _| teLH Propagation Delay 25 75 2.0 8.0 ns teHL A Input to B Output 25 75 25 75 teLH Propagation Delay 25 75 2.0 8.0 ns teHL B Input to A Output 25 75 25 75 tpzH Enable Time 25 75 20 9.0 tezL OE Input to A Output 25 8.0 2.0 8.5 ns tpHz Disable Time 1.5 7.0 1.0 75 teLz OE Input to A Output 1.5 6.0 15 6.0 tezu Enable Time 25 75 20 9.0 tez GE Input to B Output 25 8.0 2.0 8.5 ns teuz Disable Time 15 65 1.0 75 teLz OE Input to B Output 15 6.0 1.5 6.0 ’F2643 AC Electrical Characteristics: ee Ta = +25°C Tas Voc = Mil Ta, Vec = Com Symbol Voc = +5.0V = _ Units C. = 50 pF C_ = 50 pF Cy = 50 pF Min typ Max | win Max | Min Max _| teLH Propagation Delay 25 75 2.0 8.0 ns teHL A Input to B Output 25 75 25 75 tel Propagation Delay 25 7.0 25 8.0 ns teHL B Input to A Output 25 75 25 8.0 tezH Enable Time 25 8.0 2.0 9.0 teze OE Input to A Output 25 8.5 2.0 8.5 ns tpuz Disable Time 15 7.0 1.0 8.0 teLz OE Input to A Output 1.0 55 1.0 55 tezH Enable Time 25 75 20 9.0 tez OE Input to B Output 25 8.0 2.0 85 ns teHz Disable Time 15 65 1.0 75 teLz OE Input to B Output 1.5 6.0 15 6.0

’F2645 AC Electrical Characteristics: a Ta = +25°C _ _ Symbol Voc = +5.0V Tw Veo © “ Ta Voc 50 com Units C. = 50 pF L pl L pl Min tye Max [min Max | min Max_| tPLH Propagation Delay 15 6.0 15 7.0 ns tpHL A Input to B Output 25 75 25 8.0 tPLH Propagation Delay 15 6.0 15 7.0 ns tPHL B Input to A Output 25 75 25 8.0 tpZH Enable Time 25 8.0 2.0 9.0 teze OE Input to A Output 25 85 2.0 8.5 ns tpuz Disable Time 15 70 1.0 8.0 tpLz OE Input to A Output 1.0 55 1.0 55 tezu Enable Time 25 75 2.0 95 tezL OE Input to B Output 25 8.5 25 9.0 ns tpuz Disable Time 15 65 1.0 75 tpiz GE Input to B Output 1.0 65 1.0 65 Basic FAST Circuit Showing Series Resistor Placement po : a ' = ‘TL/F/10629-7

Ordering Information

The device number is used to form part of a simplified purchasing code where a package type and temperature range are defined as follows: 74F 2640/2643/2645 P C QR Temperature Range Family —_T = Special Variations 74F = Commercial X= Devices shipped in 13” reels 54F = Military QR = Commercial grade device . with burn-in Device Type QB=Military grade device with Package Code environmental and burn-in P = Plastic DIP Processing shipped in tubes D = Ceramic DIP Tem ' perature Range S = Small Outline (SOIC) C = Commercial (0°C to +70°C) M = Military (~ 55°C to + 125°C)

Physical Dimensions inches (mitimeters) 0.985 0.025 (25.019) (0.635) MAX mo pa [vs] [os] [1s] [1s] fre) fs} [re] fg oam-os0 15.588—7.874) fu WO MECC eT 0.005 -0.020 (0.127—0.508) sant 0.037 +0.005 [Pian 0.005 0.055 + 0.005, ft 20 LO OO red MAX og ee 94° 0.150 wes «1008 _o.012 Fase 0.125 ~0.200 (0.203 -0.305) “iN aire 203-0: |__osto-o4r0 | 0.060 emsnos | porn END 0.100+ 0.010 (25400256) 20a REV) 20-Lead Ceramic Dual-in-Line Package (D) Pa ave 7 ws wo 2 a AAAAHAAAAD f TA fff fi fff 0304-0419 D iTo-008— 10 643 j l-o we tenon 1 | eM TDeUd ood POUEUOEYU YE ue 1224s 67 ad ow (0.254) om1-020 ira81-7.595) 7 0.090.108 asco |r (362 —2.642) MAL TYP. ODO====__=_— see nae es TH) _ TL} 4 SE. in al iF r T ; + hae zs 030 su Leo Ts Wane 1270) 6) nam US 86-050 TYP ALL LEADS TYP ALL LEADS: Ww 0.008 typ (0-203) see nes 20-Lead Small Outline Integrated Circuit (Ss)

oS 2 Physical Dimensions inches (milimeters) (Continued) Lit. # 114659 fe Ss 0.970-0.990 4 Na fo) 082 «0.030 (24 638-25 .148) | N 337 <0.762) | 0.032 0.005 ce Wax DP SL Ge eh aaa \\ LL tt RAD 0.240-0.260 Oe PIN NO. 1 IDENT © © {6.096-6.604) PIN NO. 1 IDENT ~P, eu 1 uze0 m2 ana) ' Go Seo oo le Ol o 2 | 0.290-0.325 am OPTION 2 a2 | (7-366-8.255) oe ase na _ aut j= OPTION? - 1130 0.006 | 5 E r \\ — a 0.085 \\ (30-0127) x. o | | ie We TYP \\\\— _ Z | a | i 0.165-0200 Lew (3.683-5.080) eo | o.ro0s0010 | | li 0125-0150 (0.508) oo” 0.080 oy (254020254) 9014-0023 || (3.175-3.810) MIN te 0.360 yoy org {0355-0.585) Os (6.830) in + 200 (REV A) R= 20-Lead Plastic Dual-In-Line Package (P) cL = NS Package Number N20B ae oS o a Cc Ee o S ao fs) LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life : failure to perform, when properly used in accordance support device or system, or to affect its safety or i with instructions for use provided in the labeling, can effectiveness. : be reasonably expected to result in a significant injury .- 4 . to the user. an ied G4) National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semicondutores National Semiconductor i Corporation GmbH depan Lia. Hong Kong Ltd. Do Brasil Ltda. (Australia) PTY, Uta. 2000 Semiconductor Dive Ingustiestrasse 10 Senso Bldg. SF Suite 813, th Foor ‘Av Bg. Faia Lima, 1363 Tat Floor, 463 St Kida PO. Box 58090, 1.8000 Furstonfokoruck 4-15 Net Saku Ghinachem Golden Plaza, 0 andor Con 62 Motoure, 2004 Sania Gara, CA 95052.6000 West Gormany Shinju Ku, 77 Mody load. Tsimshaliui East, 01451 Seo Paulo, SP, Brasil Victory, Ausaa Tot. 1800) 272-9959 Tol: (081-41) 105-0 Tokyo 160, Japan Kowdoon, Hong Kong Tol (55/11) 212-5066 Tot (0) 267-5000 TWX: (910) 399-0240 Toler 527-549 Tor 3:206-7001 Tor 37231290 Fax: (55/11) 21-1181 NSBR BR Fax 61-9-2677458, Fax (08141) 109554 FAX: 3290-7000 Telex $2996 NSSEA HX Fax 32:9112506 "National dows nol assume any responsi or use of any culty dascrbed, no circuit patent icenses are reped and National resorves the ight at any be without noe o change sad cut end specications. kg