54F240

54F240 TI1 | Alldatasheet

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54F240,54F241,54F244,74F240,74F241, 74F244 54F240/54F241/54FF244 Octal Buffers/Line Drivers with TRI-STATE(RM) Outputs Literature Number: SNOS175A

54F/74F240#54F/74F241#54F/74F244 Octal Buffers/Line Drivers with TRI-STATE Outputs May 1995 54F/74F240#54F/74F241#54F/74F244 Octal Buffers/Line Drivers with TRI-STATE É Outputs General Description The ’F240, ’F241 and ’F244 are octal buffers and line driv- ers designed to be employed as memory and address driv- ers, clock drivers and bus-oriented transmitters/receivers which provide improved PC and board density.

Features

Y TRI-STATE outputs drive bus lines or buffer memory address registers Y Outputs sink 64 mA (48 mA mil) Y 12 mA source current Y Input clamp diodes limit high-speed termination effects Y Guaranteed 4000V minimum ESD protection Commercial Military Package Package DescriptionNumber 74F240PC N20A 20-Lead (0.300 × Wide) Molded Dual-In-Line 54F240DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line 74F240SC (Note 1) M20B 20-Lead (0.300 × Wide) Molded Small Outline, JEDEC 74F240SJ (Note 1) M20D 20-Lead (0.300 × Wide) Molded Small Outline, EIAJ 54F240FM (Note 2) W20A 20-Lead Cerpack 54F240LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C 74F241PC N20A 20-Lead (0.300 × Wide) Molded Dual-In-Line 54F241DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line 74F241SC (Note 1) M20B 20-Lead (0.300 × Wide) Molded Small Outline, JEDEC 74F241SJ (Note 1) M20D 20-Lead (0.300 × Wide) Molded Small Outline, EIAJ 54F241FM (Note 2) W20A 20-Lead Cerpack 54F241LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C 74F244PC N20A 20-Lead (0.300 × Wide) Molded Dual-In-Line 54F244DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line 74F244SC (Note 1) M20B 20-Lead (0.300 × Wide) Molded Small Outline, JEDEC 74F244SJ (Note 1) M20D 20-Lead (0.300 × Wide) Molded Small Outline, EIAJ 74F244MSA (Note 1) MSA20 20-Lead Molded Shrink Small Outline, EIAJ Type II 54F244FM (Note 2) W20A 20-Lead Cerpack 54F244LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C Note 1: Devices also available in 13 × reel. Use Suffix e SCX, SJX and MSAX. Note 2: Military grade device with environmental and burn-in processing. Use suffix e DMQB, FMQB and LMQB. TRI-STATEÉ is a registered trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A. Obsolete

’F240 TL/F/9501–2 ’F241 TL/F/9501–4 ’F244 TL/F/9501–6 Pin Assignment for DIP, SOIC, SSOP and Flatpak TL/F/9501–1 TL/F/9501–3 TL/F/9501–5 Logic Symbols IEEE/IEC ’F240 TL/F/9501–7 IEEE/IEC ’F241 TL/F/9501–8 IEEE/IEC ’F244 TL/F/9501–9 Obsolete

Pin Names Description U.L. Input I IH/IIL HIGH/LOW Output I OH/IOL OE1,O E 2 TRI-STATE Output Enable Input (Active LOW) 1.0/1.667 20 mA/b1m A OE2 TRI-STATE Output Enable Input (Active HIGH) 1.0/1.667 20 mA/b1m A I0 –I7 Inputs (’F240) 1.0/1.667* 20 mA/b1m A I0 –I7 Inputs (’F241, ’F244) 1.0/2.667* 20 mA/b1.6 mA O0 –O7,O 0 –O7 Outputs 600/106.6 (80) b12 mA/64 mA (48 mA) *Worst-case ’F240 enabled; ’F241, ’F244 disabled Truth Tables ’F240 OE1 D1n O1n OE2 D2n O2n HXZHXZ LHL LHL LL HLL H ’F241 OE1 D1n O1n OE2 D2n O2n HXZ LXZ LH HHH H LLLHLL ’F244 OE1 D1n O1n OE2 D2n O2n HXZHXZ LH HLH H LLLLLL H e HIGH Voltage Level L e LOW Voltage Level X e Immaterial Z e High Impedance Obsolete

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature b65§Ct o a150§C Ambient Temperature under Bias b55§Ct o a125§C Junction Temperature under Bias b55§Ct o a175§C Plastic b55§Ct o a150§C VCC Pin Potential to Ground Pin b0.5V to a7.0V Input Voltage (Note 2) b0.5V to a7.0V Input Current (Note 2) b30 mA to a5.0 mA Voltage Applied to Output in HIGH State (with V CC e 0V) Standard Output b0.5V to V CC TRI-STATE Output b0.5V to a5.5V Current Applied to Output in LOW State (Max) twice the rated I OL (mA) ESD Last Passing Voltage (Min) 4000V Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: Either voltage limit or current limit is sufficient to protect inputs. Recommended Operating Conditions Free Air Ambient Temperature Military b55§Ct o a125§C Commercial 0§Ct o a70§C Supply Voltage Military a4.5V to a5.5V Commercial a4.5V to a5.5V Symbol Parameter 54F/74F Units V CC Conditions Min Typ Max VIH Input HIGH Voltage 2.0 V Recognized as a HIGH Signal VIL Input LOW Voltage 0.8 V Recognized as a LOW Signal VCD Input Clamp Diode Voltage b1.2 V Min I IN eb 18 mA VOH Output HIGH 54F 10% V CC 2.4 IOH eb 3m A Voltage 54F 10% V CC 2.0 IOH eb 12 mA 74F 10% V CC 2.4 V Min I OH eb 3m A 74F 10% V CC 2.0 IOH eb 15 mA 74F 5% V CC 2.7 IOH eb 3m A VOL Output LOW 54F 10% V CC 0.55 V Min IOL e 48 mA Voltage 74F 10% V CC 0.55 IOL e 64 mA IIH Input HIGH 54F 20.0 mA Max VIN e 2.7V Current 74F 5.0 IBVI Input HIGH Current 54F 100 mA Max VIN e 7.0V Breakdown Test 74F 7.0 ICEX Output HIGH 54F 250 mA Max VOUT e VCC Leakage Current 74F 50 VID Input Leakage 74F 4.75 V 0.0 IID e 1.9 mA Test All Other Pins Grounded IOD Output Leakage 74F 3.75 mA 0.0 VIOD e 150 mV Circuit Current All Other Pins Grounded IIL Input LOW Current b1.0 mA Max VIN e 0.5V (OE 1,O E 2,O E 2,D n (’F240)) b1.6 VIN e 0.5V (D n (’F241, ’F244)) IOZH Output Leakage Current 50 mA Max V OUT e 2.7V IOZL Output Leakage Current b50 mA Max V OUT e 0.5V IOS Output Short-Circuit Current b100 b225 mA Max V OUT e 0V IZZ Bus Drainage Test 500 mA 0.0V V OUT e 5.25V Obsolete

Symbol Parameter 54F/74F Units V CC Conditions Min Typ Max ICCH Power Supply Current (’F240) 19 29 mA Max V O e HIGH ICCL Power Supply Current (’F240) 50 75 mA Max V O e LOW ICCZ Power Supply Current (’F240) 42 63 mA Max V O e HIGH Z ICCH Power Supply Current 40 60 mA Max VO e HIGH (’F241, ’F244) ICCL Power Supply Current 60 90 mA Max VO e LOW (’F241, ’F244) ICCZ Power Supply Current 60 90 mA Max VO e HIGH Z (’F241, ’F244) 74F 54F 74F TA ea 25§C TA,V CC e Mil T A,V CC e ComSymbol Parameter VCC ea 5.0V CL e 50 pF C L e 50 pF Units CL e 50 pF Min Typ Max Min Max Min Max

Ordering Information

The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows: 74F 240/241/244* SCX Temperature Range Family Special Variations 74FeCommercia QB e Military grade device with 54FeMilitary environmental and burn-in processing Device Type X e devices shipped in 13 × reel Package Code Temperature RangeP e Plastic DIP CeCommercial (0 §Ct o a70§C)D e Ceramic DIP MeMilitary ( b55§Ct o a125§C)F e Flatpak NOTE:L e Leadless Chip Carrier (LCC) Not required for MSA packageS e Small Outline SOIC JEDEC code*MSA e Shrink Small Outline Package (EIAJ SSOP) (’244 only) SJ e Small Outline SOIC EIAJ Obsolete

Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) 20-Lead Ceramic Dual-In-Line Package (D) Obsolete

Physical Dimensions inches (millimeters) (Continued) 20-Lead (0.300 × Wide) Molded Small Outline Package, JEDEC (S) 20-Lead (0.300 × Wide) Molded Small Outline Package, EIAJ (SJ) Obsolete

Physical Dimensions inches (millimeters) (Continued) 20-Lead Molded Shrink Small Outline, EIAJ Type II (MSA) 20-Lead (0.300 × Wide) Molded Dual-In-Line Package (P) Obsolete

54F/74F240#54F/74F241#54F/74F244 Octal Buffers/Line Drivers with TRI-STATE Outputs Physical Dimensions inches (millimeters) (Continued) 20-Lead Ceramic Flatpak (F) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd. 2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999 Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. Obsolete

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