54ABT245 NSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
n Bidirectional non-inverting buffers n A and B output sink capability of 48 mA, source capability of 24 mA n Guaranteed output skew n Guaranteed multiple output switching specifications n Output switching specified for both 50 pF and 250 pF loads n Guaranteed simultaneous switching, noise level and dynamic threshold performance n Guaranteed latchup protection n High impedance glitch-free bus loading during entire power up and power down cycle n Non-destructive hot insertion capability n Disable time is less than enable time to avoid bus contention n Standard Microcircuit Drawing (SMD) 5962-9214801 Ordering Code: Military Package Package Description Number 54ABT245J-QML J20A 20-Lead Ceramic Dual-In-Line 54ABT245W-QML W20A 20-Lead Cerpak 54ABT245E-QML E20A 20-Lead Ceramic Leadless Chip Carrier, Type C Logic Symbol TRI-STATE® is a registered trademark of National Semiconductor Corporation. DS100204-1 July 1998 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs © 1998 National Semiconductor Corporation DS100204 www.national.com
OE Output Enable Input (Active LOW) T/R Transmit/Receive Input A0–A 7 Side A Inputs or TRI-STATE Outputs B0–B 7 Side B Inputs or TRI-STATE Outputs Truth Table Inputs Output OE T/R L L Bus B Data to Bus A L H Bus A Data to Bus B H X High Z State H = HIGH Voltage Level L = LOW Voltage Level X = Immaterial Logic Diagram Pin Assignment for DIP and Flatpak. DS100204-5 Pin Assignment for LCC DS100204-3 DS100204-4 www.national.com 2
Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature −65˚C to +150˚C Ambient Temperature under Bias −55˚C to +125˚C Junction Temperature under Bias Ceramic −55˚C to +175˚C V CC Pin Potential to Ground Pin −0.5V to +7.0V Input Voltage (Note 2) −0.5V to +7.0V Input Current (Note 2) −30 mA to +5.0 mA Voltage Applied to Any Output in the Disabled or Power-off State −0.5V to 5.5V in the HIGH State −0.5V to V CC Current Applied to Output in LOW State (Max) twice the rated I OL (mA) DC Latchup Source Current −500 mA Over Voltage Latchup (I/O) 10V Recommended Operating Conditions Free Air Ambient Temperature Military −55˚C to +125˚C Supply Voltage Military +4.5V to +5.5V Minimum Input Edge Rate ( ΔV/Δt) Data Input 50 mV/ns Enable Input 20 mV/ns Note 1:Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2:Either voltage limit or current limit is sufficient to protect inputs. Symbol Parameter ABT245 Units V CC Conditions Min Typ Max VIH Input HIGH Voltage 2.0 V Recognized HIGH Signal VIL Input LOW Voltage 0.8 V Recognized LOW Signal VCD Input Clamp Diode Voltage −1.2 V Min I IN = −18 mA (OE, T/R) VOH Output HIGH Voltage 54ABT 2.5 V Min I OH = −3 mA (An,B n) 54ABT 2.0 V Min I OH = −24 mA (An,B n) VOL Output LOW Voltage 54ABT 0.55 V Min IOL = 48 mA (An,B n) IIH Input HIGH Current 5 µA Max VIN = 2.7V (OE, T/R) (Note 3) 5V IN = VCC (OE, T/R) IBVI Input HIGH Current Breakdown Test 7 µA Max V IN = 7.0V (OE, T/R) IBVIT Input HIGH Current Breakdown Test (I/O) 100 µA Max VIN = 5.5V (An,B n) IIL Input LOW Current −5 µA Max VIN = 0.5V (OE, T/R) (Note 3) −5 V IN = 0.0V (OE, T/R) VID Input Leakage Test 4.75 V 0.0 IID = 1.9 µA (OE, T/R) All Other Pins Grounded IIH +I OZH Output Leakage Current 50 µA 0 − 5.5V V OUT = 2.7V (An,B n); OE= 2.0V IIL +IOZL Output Leakage Current −50 µA 0 − 5.5V V OUT = 0.5V (An,B n); OE= 2.0V IOS Output Short-Circuit Current −100 −275 mA Max V OUT = 0.0V (An,B n) ICEX Output High Leakage Current 50 µA Max V OUT = VCC (An,B n) IZZ Bus Drainage Test 100 µA 0.0 VOUT = 5.5V (An,B n); All Others GND ICCH Power Supply Current 50 µA Max All Outputs HIGH ICCL Power Supply Current 30 mA Max All Outputs LOW ICCZ Power Supply Current 50 µA Max OE = VCC , T/R= GND or VCC ; All Other GND or VCC ICCT Additional Outputs Enabled 2.5 mA V I = VCC − 2.1V ICC /Input Outputs TRI-STATE 2.5 mA Max OE, T/R V I = VCC − 2.1V Outputs TRI-STATE 50 µA Data Input V I = VCC − 2.1V All Others at VCC or GND. 3 www.national.com
Symbol Parameter ABT245 Units V CC Conditions Min Typ Max ICCD Dynamic ICC No Load 0.1 mA/ MHz Max Outputs Open (Note 3) OE = GND, T/R = GND or VCC One Bit Toggling, 50% Duty Cycle (Note 4) Note 3:Guaranteed but not tested. Note 4:For 8 bits toggling, ICCD < 0.8 mA/MHz. Conditions Symbol Parameter Min Max Units V CC C L = 50 pF, R L = 500Ω VOLP Quiet Output Maximum Dynamic VOL 1.1 V 5.0 T A = 25˚C (Note 5) VOLV Quiet Output Minimum Dynamic VOL -0.45 V 5.0 T A = 25˚C(Note 5) Note 5:Max number of outputs defined as (n).n−1 data inputs are driven 0V to 3V. One output at LOW. Symbol Parameter 54ABT Units TA = −55˚C to +125˚C VCC = 4.5V–5.5V C L = 50 pF Min Max tPLH Propagation Delay 1.0 4.8 ns tPHL Data to Outputs 1.0 4.8 tPZH Output Enable 1.0 6.7 ns tPZL Time 2.0 7.5 tPHZ Output Disable 1.7 7.4 ns tPLZ Time 1.7 6.5 Capacitance Symbol Parameter Typ Units Conditions TA = 25˚C C IN Input Capacitance 5.0 pF V CC = 0V (OE , T/R) C I/O(Note 6) I/O Capacitance 11.0 pF V CC = 5.0V (An,B n) Note 6:C I/Ois measured at frequency f= 1 MHz, per MIL-STD-883B, Method 3012. www.national.com 4
Capacitance(Continued) Dashed lines represent design characteristics; for specified guarantees, refer to AC Characteristics Table. tPLH vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-14 tPHL vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-15 tPLH vs Load Capacitance
1 Output Switching, TA = 25˚C
8 Outputs Switching, TA = −40˚C to +85˚C
8 Outputs Switching, TA = 25˚C
5 www.national.com
Capacitance(Continued) Dashed lines represent design characteristics; for specified guarantees, refer to AC Characteristics Table. tPZL vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-20 tPLZ vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-21 tPZL vs Temperature (TA ) C L = 50 pF, 8 Outputs Switching DS100204-22 tPLZ vs Temperature (TA ) C L = 50 pF, 8 Outputs Switching DS100204-23 tPZH vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-24 tPHZ vs Temperature (TA ) C L = 50 pF, 1 Output Switching DS100204-25 www.national.com 6
Capacitance(Continued) Dashed lines represent design characteristics; for specified guarantees, refer to AC Characteristics Table. Dashed lines represent design characteristics; for specified guarantees, refer to AC Characteristics Table. tPZH vs Temperature (TA ) C L = 50 pF, 8 Outputs Switching DS100204-26 tPHZ vs Temperature (TA ) C L = 50 pF, 8 Outputs Switching DS100204-27 tPZH vs Load Capacitance tPLH and tPHL vs Number Outputs Switching VCC = 5.0V, TA = 25˚C, CL = 50 pF DS100204-30 ICC vs Frequency, Average, TA = 25˚C, All Outputs Unloaded/Unterminated DS100204-31 7 www.national.com
Physical Dimensionsinches (millimeters) unless otherwise noted 20-Terminal Ceramic Chip Carrier (L) 20-Lead Ceramic Dual-In-Line Package (D) 9 www.national.com
Physical Dimensionsinches (millimeters) unless otherwise noted (Continued) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DE- VICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMI- CONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or sys- tems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose fail- ure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support device or system whose failure to perform can be rea- sonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com www.national.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5620-6175 Fax: 81-3-5620-6179 20-Lead Ceramic Flatpak (F) 54ABT245 Octal Bidirectional Transceiver with TRI-STATE Outputs National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.