BC546B MCC | Alldatasheet
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l 150oC Junction Temperature Mechanical Data l Case: TO-92, Molded Plastic l Polarity: indicated as above. Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage BC546 BC547 BC548 VCEO V Collector-Base Voltage BC546 BC547 BC548 VCBO V Emitter-Base Voltage VEBO 6.0 V Collector Current(DC) IC 100 mA Power Dissipation@TA=25oC Pd 625 5.0 mW mW/oC Power Dissipation@TC=25oC Pd 1.5 W mW/oC Thermal Resistance, Junction to Ambient Air 200 oC/W Thermal Resistance, Junction to Case 83.3 oC/W Operating & Storage Temperature Tj, TSTG -55~150 oC BC546,B BC547,A,B,C BC548,A,B,C NPN Silicon Amplifier Transistor 625mW Pin Configuration Bottom View C B E www.mccsemi.com R /C0113JC R /C0113JA TO-92 INCHES MM DIM MIN MAX MIN MAX NOTE A .175 .185 4.45 4.70 B .175 .185 4.46 4.70 D .016 .020 0.41 0.63 E .135 .145 3.43 3.68 G .095 .105 2.42 2.67 A E B C D G DIMENSIONS /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents
21201 Itasca Street Chatsworth
/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19 MCC
www.mccsemi.com MCC ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C C = 2.0 mA, VCE = 5.0 V) BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C C = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C hFE 110 110 110 110 200 420 150 270 180 290 520 120 180 300 450 800 800 220 450 800 Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) — --- 0.3 V Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) — 1.0— V Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) 0.55 0.7 0.77 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 BC547 BC548 fT 150 150 150 300 300 300 MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) C obo — 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) C ibo — 10 — pF Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C hfe 125 125 125 240 450 220 330 600 500 900 260 500 900 Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, BC546 f = 1.0 kHz, Δf = 200 Hz) BC547 BC548 NF 2.0 2.0 2.0 dB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage BC546 (IC = 1.0 mA, IB = 0) BC547 BC548 V(BR)CEO 65 V Collector–Base Breakdown Voltage BC546 (IC = 100 µAdc) BC547 BC548 V(BR)CBO 80 V Emitter–Base Breakdown Voltage BC546 (IE = 10 A, IC = 0) BC547 BC548 V(BR)EBO 6.0 6.0 6.0 V BC546 thru BC548C