54786-0931 MOLEX | Alldatasheet
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ç [ 1. ద༻ൣғ SCOPE ] SD MEMORY CARD ༻ίωΫλ ఆ͢Δɻ This specification covers the SD MEMORY CARD CONNECTOR series. [ 2. ൪ PRODUCT NAME AND PART NUMBER ] ʢΤϯϘεςʔϓೖΓ Embossed Tape Packageʣ ϔομʔ ΞοηϯϒϦ Header Assembly Header Assembly ܕ ൪ Part Number ໊ শ Product Name [ 3. ֨RATINGS ] ൣғ Ambient Humidity Range Storage Temperature Range Ambient Temperature Range ̌ɽ̑ A ༰ిྲྀ Rated Current(MAX.) [AC ( rms) / DC ] ̍̌̌ V ༰ిѹ Rated Voltage(MAX.) ن ֨ Standard ߲ Item *1: Ήɻ *1: Including terminal temperature rise. *2: ࿐ͳ͖͜ͱɻ *2: Storage area is to be free of dew formation. JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 3 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹEN-37(019) 1 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER 2002/06/25 MSASAOMTOMITAYMATSUMOTOJ YR/MO/DAYDATE: APPROVEDBY CHECKED BY:WRITTEN BY:STATUSDESIGN CONTROL MOLEX INC. AND SHOULD NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO ༷ॻ'02/06/25 Y.MATSUMOTO J2002-2641 SD MEMORY CARD CONN.RELEASED A TITLE:REVISE ON PC ONLY 1-11SHEET AREV.
[ 4. ੑ ೳ PERFORMANCE ] 4 - 1. తੑೳ Electrical Performance ҟঢ়ͳ͖͜ͱ No Breakdown ʹɺAC(rms)500V (JIS C5402 5.1/MIL-STD-202 ๏ 301) Apply 500V AC(rms) for 1 minute between adjacent pins or pin and ground.(Trip Current:̍mA) (JIS C5402 5.1/MIL-STD-202 Method 301) ి ѹ Dielectric Strength 4-1-3 1000 Megohms MIN. ʹɺ DC 500V ΛҹՃ͠ଌఆ͢Δɻ (JIS C5402 5.2/MIL-STD-202 ๏ 302) Apply 500V DC between adjacent pins or pin and ground. (JIS C5402 5.2/MIL-STD-202 Method 302) ઈ ԑ ߅ Insulation Resistance 4-1-2 80 milliohms MAX. (JIS C5402 5.4) Mate connector,measure by dry circuit, 20mV MAX., 10mA. MAX.. (JIS C5402 5.4) ৮ ߅ Contact Resistance 4-1-1 ن ֨ Requirement ݅ Test Condition ߲ Item çççççççç 4 - 2. ցతੑೳ Mechanical Performance 3.92 N MIN./PIN {0.4kgf MIN./PIN} ຖ25±3mm ͷ͞ͰλʔϛφϧΛ ʹҾுΔɻ Apply axial pull out force at the speed rate of 25±3mm/minute. Terminal Retention Force 4-2-1 ن ֨ Re quirement ݅ Test Condition ߲ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 2 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
ҟৗͳ͖͜ͱ No damage ֎ ؍ Appearance ΧʔυΛૠೖ͠ 5kgf ͷՙॏ ΛՃ͑Δɻ The card is inserted in positive and the opposite direction and the load of 5kgf is added. Push in Strength 4-2-3 9.8 N MAX. {1.0 kgf MAX.} Χʔυ͕ඈͼग़͢͜ͱ ΧϜϩοΫ ղআՙॏ Lock release force 9.8 N MAX.{1.0 kgf MAX.} ΧϜϩοΫՙॏ Lock force ຖ25±3mm ͷ͞Ͱ ΧʔυΛԡ͢ɻ Push the card at the speed rate of 25±3mm/minute. Insertion/ Withdrawal Force 4-2-2 ن ֨ Requirement ݅ Test Condition ߲ Item 4 - 3. ͦɹͷɹଞ Environmental Performance and Others 30 °C MAX. Թ্ঢ Tempera- ture rise ଌఆ͢Δɻ(UL 498) Carrying rated current load. (UL 498) Թ ্ ঢ Temperature Rise 4-3-2 ҟৗͳ͖͜ͱ No damage ֎ ؍ Appearance 100 milliohms MAX. Contact Resistance 1ʹ 400ʙ600ճ ͷ͞Ͱɺ Λ10000ճ ฦ͢ɻ When mate/un-mate up to 10,000 cycles repeatedly at a rate of 400 - 600 cycles/hour. ฦ͠ૠൈ (ϓογϡΠϯʗ ϓογϡΞτ) Repeated Mate/un-mate (Push in/ Push out) 4-3-1 ن ֨ Requirement ݅ Test Condition ߲ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 3 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
0.1 microsecond MAX. ॠ அ Discontinuity 100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance DC 1mA Ή Λ ֤3ճ Ճ͑Δɻ (JIS C0041/MIL-STD-202 ๏ 213) Mate connector and subject to the following shock conditions. 3 shocks shall be applied along 3 mutually perpendicular axis, passing DC 1mA current during the test. (Total of 18 shocks) Test Plus : Half Sine Peak Value : 490 m/s Duration : 11ms (JIS C0041/MIL-STD-202 Method 213) ি ܸ ੑ Shock 4-3-4 0.1 microsecond MAX. ॠ அ Dis- continuity 100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance DC 1mA Ή 10~55~10Hz/ɺશৼ෯ 1.52mm ຢɺՃ 19.6m/s2 {2G} ͷ ৼಈΛ ֤30ؒ Ճ͑Δɻ (MIL-STD-202 ๏ 201) Amplitude : 1.52mm P-P or 19.6m/s2{2G} Sweep time : 10-55-10 Hz in 1 minute Duration : 30 minutes in each of X.Y.Z. axis Electronical : DC 1mA current shall load be flowed during the test (MIL-STD-202 Method 201) ৼ ಈ ੑ Vibration 4-3-3 Requirement Test Condition ɹɹ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 4 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺ–55ʶ3°C ʹ30 +85ʶ2°C ʹ 30ɺ ͜ΕΛ1αΠΫϧ ͱ͠5αΠΫϧ ߦ Թʹ์ஔ͢Δɻɹ(JIS C0025) Mate connector and subjected to the following conditions for 5 cycles. Upon completion of the exposure period, the test specimens shall be conditions at ambient room conditions for 1 to 2 hours, after which the specified measurements shall be performed. 1 cycle a) – 55ʶ3°C 30 min. ɹɹɹ b) +85ʶ2°C 30 min. Transit time shall be within 3 min.. (JIS C0025) ԹαΠΫϧ Temperature Cycling 4-3-6 1000 Megohms MIN. Insulation Resistance 4-1-3 Λຬͷ͜ͱ Must meet 4-1-3 ి ѹ Dielectric Strength 100 milliohms MAX Contact Resistance ҟৗͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺୈ6݅ ʹͯ9͍ɺ10αΠΫϧ ஈ֊6͏ɻୠ͠ɺஈ֊ 7a ॳΊͷ9αΠΫϧͷ͏ͪҙͷ Թʹ24์ஔ͢Δɻ (MIL-STD-202 ๏ 106) Mate connector and subject to the conditions specified on per.[6] for 9 cycles. The test specimens shall be exposed to STEP 7a during only 5 out of 9 cycles. A 10th cycles consisting of only step 1 througt 6 is then performed, after which the test specimens shall be conditioned at ambient room conditions for 24 hours. (MIL-STD-202 Method 106) ɹ ੑ (αΠΫϧ) Moisture Resistance 4-3-5 ن ֨ Requirement ݅ Test Condition ߲ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 5 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺ-55±3°C ͷ தʹ 96ؒ࣌ औΓग़͠ɺ 1~2Թʹ์ஔ͢Δɻ (JIS C0020) Mate connector and exposed to -55±3°C for 96 hours. Upon completion of the exposure period, the test specimens shall be conditions at ambient room conditions for 1 to 2 hours, after which the speified measurements shall be performed. (JIS C0020) פ ੑ Cold Resistance 4-3-8 100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺ85±2°C ͷ தʹ 96ؒ࣌ औΓग़͠ɺ 1~2Թʹ์ஔ͢Δɻ (JIS C0021/MIL-STD-202 ๏ 108) Mate connector and exposed to 85±2°C for 96 hours. Upon completion of the exposure period, the test specimens shall be conditions at ambient room conditions for 1 to 2 hours, after which the speified measurements shall be performed. (JIS C0021/MIL-STD-202 Method 108) ੑ Heat Resistance 4-3-7 ن ֨ Requirement ݅ Test Condition ߲ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 6 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺ35±2°C ʹͯ ԹͰ ૩ͤ͞Δɻ (MIL-STD-1344) Mate connector and exposed to the following salt mist conditions. Upon completion of the exposure period, salt deposites shall be removed by a gentle wash or dip in running water, after which the specified measurements shall be performed. NaCl solution : 5ʶ1% Spray time : 48 hours Ambient temperature : 35±2°C (MIL-STD-1344) Ԙ ਫ ໄ Salt spray 4-3-10 100 milliohms MAX. Contact Resistance ҟঢ়ͳ͖͜ͱ No Damage ֎ ؍ Appearance ͤ͞ɺ40±2°C, 75% ʹͯɺ50ʶ5ppm Ψεத ʹ 24ؒ࣌ ์ஔ͢Δɻ Mate connector and exposed to 50ʶ5ppm SO 2 gas, ambient temperature 40±2°C, relative humidity 75% for 24 hours. Ψε SO
2 Gas
ن ֨ Requirement ݅ Test Condition ߲ Item JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 7 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
Ϧϑϩʔ2ޙ ҟঢ়ͳ͖͜ͱ No Damage after 2 times of reflow ֎ ؍ Appearance Resistance to Soldering Heat 4-3-12 ਁ௮໘ੵͷ95%Ҏ্ 95% of immersed area must show no voids, pin holes. ೞΕੑ Solder Wetting ઌΑΓ 0.5mm ͷҐஔ·Ͱ Dip soldertails into the molten solder (held at 230±5°C) up to 0.5mm from the tip of tails for 3±0.5 seconds. Solder Ability 4-3-11 Requirement Test Condition ɹɹ Item ( ) : ֨نߟࢀReference Standard { } : ୯Ґ Reference Unit [ 5. ࣭ࡐPRODUCT SHAPE, DIMENSIONS AND MATERIALS ] র Refer to the drawing. JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 8 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
çççç[ 6. ݅MOISTURE RESISTANCE CONDITIONS ] (MIL-STD-202 ๏106) MIL-STD-202 METHOD 106 JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 9 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
߲ࣄINSTRUCTION UPON USAGEʳ ʹ͍ͭͯ ೳ̨̙ ͖ͷͳ͍MMC(ŵſŧŸũƄŎŗŜŖŪƄʣ Ͱ͋Γ·ͤΜɻ શͳΧʔ ʹ͍ͭͯ ͷѹͷΈ ʹ ͍க͠·͢ɻ ʹ ೦͞ΕΔͨΊɺऔΓѻ ʢSWITCH NAIL෦ϦϖΞʔʹ͍ͭͯ JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 10 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY
MTOMITAYMATSUMOTOJ2002-2641'02/06/25RELEASEDA CH'K:WRTTN:EC NO.DATEREV. RECORDREV. JAPANESE ENGLISH LANGUAGE PRODUCT SPECIFICATION ES-40000-3996 REV. A SHEET 4 95/MAR/10 EC U5-0926 DCBRD03.LWP B to B 1 ɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹɹ EN-37-1(019) 11 OF 11PS54786018.lwpPS-54786-018 SHEETFILE NAMEDOCUMENT NUMBER MOLEX INC. AND MUST NOT BE USED WITHOUT WRITTEN PERMISSIONDESCRIPTIONREV. THIS DOCUMENT CONTAINS INFORMATION THAT IS PROPRIETARY TO RELEASED SD MEMORY CARD CONN. A TITLE:REVISE ON PC ONLY