5406NG

5406NG VBSEMI | Alldatasheet

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Technical content

N-Channel 4 -V (D-S) MOSFET

FEATURES

• TrenchFET ® Power MOSFET  100 % R g and UIS Tested

APPLICATIONS

 Synchronous Rectification  Power Supp lie s PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, c Qg (Typ.) 0.0050 at VGS = 10 V 85 80 nC0.0065 at VGS = 4.5 V 70 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. Calculated based on maximum junction temperature. Package limitation current is 110 A. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherw ise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 4 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 175 °C) TC = 25 °C ID 85a, c A TC = 70 °C 70 c TA = 25 °C 59b TA = 70 °C 53b Pulsed Drain Current IDM 250 Avalanche Current Pulse L = 0.1 mH IAS 80 Single Pulse Avalanche Energy EAS 320 V Continuous Source-Drain Diode Current TC = 25 °C IS 110a, c ATA = 25 °C 2.6b Maximum Power Di ssipation TC = 25 °C PD 312a W TC = 70 °C 200 TA = 25 °C 3.13b TA = 70 °C 2.0b Operating Junction and Storage T emperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum U nit Maximum Junction-to-Ambientb Steady State RthJA 32 40 °C/WMaximum Junction-to-Case Steady State RthJC 0.33 0.4 RoHS COMPLIANT T O-252 S GD www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

Notes: a. Pulse test; pulse wi dth ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abs olute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless othe rwise noted Parameter Symbol Te st Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 41 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 8 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Dr ain Current IDSS VDS = 40 V, VGS = 0 V 1 µAVDS = 40 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V , VGS = 10 V 120 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 30 A 0.0050 0.0064 ΩVGS = 4.5 V, ID = 20 A 0.0065 0.00 Forward Transconductancea gfs VDS = 15 V, ID = 30 A 180 S Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 2380 pFOutput Capacitance Coss 550 Reverse Transfer Capacitance Crss 250 Total Gate Charge Qg VDS = 20 V, VGS = 10 V, ID = 20 A 80 120 nCGate-Source Charge Qgs 20 Gate-Drain Charge Qgd 12 Gate Resistance Rg f = 1 MHz 0.85 1.3 Ω Tur n- On Delay Time td(on) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω 20 30 ns Rise Time tr 11 17 Turn-Off Delay Time td(off) 77 115 Fall Time tf 10 15 Tur n-On De lay Time td(on) VDD = 20 V, RL = 1.0 Ω ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω 102 155 Rise Time tr 62 95 Turn-Off Delay Time td(off) 180 270 Fall Time tf 60 90 Drain-Source Body Diod e Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 110 A Pulse Diode Forward Currenta ISM 200 Body Diode Voltage VSD IS = 20 A 0.8 1.2 V Body Diode Reverse Recov ery Time trr IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 50 75 ns Body Diode Reverse Recover y Charge Qrr 70 105 nC Reverse Recover y Fall Time ta 30 ns Reverse Recovery Rise Ti me tb 20 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Output Characteristics Transconductance Capac itance 100 150 200 250 VDS - Drain-to-Source Voltage (V - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =3 V VGS =4 V 160 240 320 400 0 1 53 04 56 07 59 0 I D - Drain Current (A) - Transconductance (S)gfs TC = 125 °C TC = - 55 °C TC = 25 °C Crss 1000 2000 3000 0 1 02 03 04 0 Ciss VDS - Drain-to-Source Voltage (V C - Capacitance (pF) Coss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 01234 VGS - G a t e - t o - Sou rce Voltage (V) - Drain Current (A)I D TC = 25 °C TC = - 55 °C TC = 125 °C 0.0000 0.002 0.004 0.006 0.00 0.01 02 0 4 0 6 0 80 100 120 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 0 50 100 150 200 250 ID =2 0A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =3 0V VDS =2 0V VDS =1 0V www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted On-Resistance vs. Junction Temperatu re On-Resistance vs. Gate-to-Source Voltage 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS =1 0V ID =3 0A VGS =4 . 5V 0.000 0.002 0.004 0.006 0.008 0.010 0246 8 10 - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 150 °C Forward Diode Voltage vs. Temperatur e Threshold Voltage VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 0.01 0.001 0.1 100 TJ = 25 °CTJ = 150 °C - 1.0 - 0.6 - 0.2 0.2 0.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) ID =5m A Safe Operating Area, Juncti on-to-Ambient 0.01 0.1 100 1000 0.1 1 10 100 - Drain Current (A)I D VDS - Drain-to-Source Voltage (V * VGS > minimu m VGS at which RDS(on) is specified TC = 25 °C Single Pulse BVDSS Limited byR DS(on)* 100 ms, DC 10 ms 1m s 10 µs 100 µs www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted * The power dissip a tion PD is based on T J(max) = 150 °C, using junction-t o -case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 140 210 280 350 0 25 50 75 100 125 150 TJ -J unction to Case (°C) Package Limited ID - Drain Current (A) Power Derating 100 150 200 250 300 350 400 0 25 50 75 100 125 150 T J -J unction to Case (°C) Power (W) Normalized Thermal Transient Impedance, Jun ction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Dura tion (s) Normalized Effective Transient Thermal ImpedanceSingle Pulse 0.1 10-3 10-2 110-110-4 0.05 0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

• Dimension L3 is fo r reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR DPAK (T O-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 5406NG A ll data sheet.com