5341

5341 SENSITRON | Alldatasheet

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DATA SHEET 5341, Rev. - ©2012 Sensitron Semiconductor

221 West Industry Court  Deer Park, NY 11729-4681

 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHDC624172 SHDC624172P SHDC624172N SHDC624172D HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 50 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC TO-258 PACKAGE FEATURES: NO RECOVERY TIME OR REVERSE RECOVERY LOSSES NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at high frequency; use part number prefix SHDG MAXIMUM RATINGS ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MAX. UNITS PEAK INVERSE VOLTAGE PIV 1200 Volts MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part numbers with P and N suffixes) IO 100 Amps MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC, for part number with D suffix or without suffix) IO 50 Amps MAXIMUM REPETITIVE FORWARD SURGE CURRENT (t = 8.3ms, Sine) per leg, TC = 25 OC IFRM 200 Amps MAXIMUM POWER DISSIPATION, TC = 25 OC Pd 175 W MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE For Common Cathode/Anode Configurations) R JC 1.00 C/W MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE* Top, Tstg -55 to +200 C * Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL -PRF-19500 will only be performed to 175C.

DATA SHEET 5341, Rev. - ©2012 Sensitron Semiconductor  (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHDC624172 SHDC624172P SHDC624172N SHDC624172D

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC TYP MAX. UNITS MAXIMUM FORWARD VOLTAGE DROP (If =10A PER LEG) Vf TJ=25 C TJ=175 C 1.70 2.50 2.00 3.00 Volts MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 C TJ = 175 C 0.01 0.02 0.20 1.00 mA TOTAL CAPACITIVE CHARGE (VR=1200V, IF=50A, di/dt=500A/ s and TJ=25 C) QC, per leg 305 nC TOTAL JUNCTION CAPACITANCE (Vr =400V, f=1MHz PER LEG) CT 325 pF

DATA SHEET 5341, Rev. - ©2012 Sensitron Semiconductor  (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHDC624172 SHDC624172P SHDC624172N SHDC624172D 1 2 3 .270 .240 (6.86 6.10) .045 .035 (1.14 0.89) .140(3.56) BSC .550 .530 (13.97 13.46) .695 .685 (17.65 17.40) .835 .815 (17.96 17.70) 1.302 1.202 (33.07 30.53) .065 .055 (1.65 1.40)

3 Places

.200(5.08) BSC

2 Places

.165 .155 (4.19 3.94) Dia. MECHANICAL DIMENSIONS TO-258 PINOUT TABLE TYPE PIN 1 PIN 2 PIN 3 SINGLE RECTIFIER CATHODE ANODE ANODE DUAL RECTIFIER/COMMON CATHODE (P) ANODE 1 COMMON CATHODE ANODE 2 DUAL RECTIFIER/COMMON ANODE (N) CATHODE 1 COMMON ANODE CATHODE 2 DUAL RECTIFIER/DOUBLER (D) ANODE ANODE/ CATHODE CATHODE SCHEMATIC 1 2 3 1 2 3 1 2 3 3 2 1 SINGLE COMMON CATHODE COMMON ANODE DOUBLER Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications.

DATA SHEET 5341, Rev. - ©2012 Sensitron Semiconductor  (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com SHDC624172 SHDC624172P SHDC624172N SHDC624172D DISCLAIMER: 1- The information given herein, including the specificat ions and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the late st version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medi cal equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause durin g operation of the user’s units according to the datasheet(s). Sens itron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be li able for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.