5303D_15 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 5303D Preliminary NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R223-004.a HIGH VOLTAGE NPN TRANSISTOR WITH DIODE „ DESCRIPTION The UTC 5303D is a high voltage silicon triple diffused type NPN transistor with diode. This chip is built in free-wheeling diode , makeing efficient anti-saturation operation. „ FEATURES * Not Necessary to Interest an hFE Value * Need Very Low Base Drive * Can Be Used In Half Bridge Light Ballast Application „ INTERNAL SCHEMATIC DIAGRAM (3) E (1) B (2) C TO-251 Lead-free: 5303DL Halogen-free:5303DG „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Halogen Free Package 1 2 2 Packing 5303D-TM3-T 5303DL-TM3-T 5303DG-TM3-T TO-251 B C E Tube

5303D Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 4 . a „ ABSOLUTE MAXIMUM RATING (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp<5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp<5ms) IBM 2 A Collector Dissipation (TC≤25°С) PC 25 W Maximum Operating Junction Temperature TJ +150 ° С Storage Temperature Range TSTG -65~+150 ° С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 100 ° С/W Junction to Case θJC 6.25 ° С/W „ ELECTRICAL CHARACTERISTICS (Ta = 25°С,unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Base Voltage BV CBO IC = 1mA, IB = 0 700 V Collector-Emitter Breakdown Voltage (Note) BV CEO IC = 10mA, IE = 0 400 V Emitter-Base Breakdown Voltage BV EBO IE = 1mA, IC = 0 10 V Collector Cutoff Current I CBO V CB = 700V, IE = 0 1 µA Emitter Cutoff Current I EBO V EB = 9V, IC = 0 1 µA ON CHARACTERISTICS hFE1 V CE =5V, IC =10mA 10 hFE2 V CE =5V, IC =400mA 10 30 DC Current Gain hFE3 V CE =5V, IC =1A 5 SWITCHING CHARACTERISTICS Turn On Time t ON 0.15 0.3 µS Storage Time t STG 0.5 0.9 µS Fall Time t F VCC =250V, IC =1A, IB1=IB2 =0.2A, tp =25uS Duty Cycle<1% 0.2 0.4 µS Diode Forward Voltage Drop V F I C =1A 1.4 V Fall Time t F I C =1A 800 µS Note: Pulsed duration = 300µS, duty cycle ≤2%

5303D Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 2 3 - 0 0 4 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.