52N15D

IRFB52N15D IRF | Alldatasheet

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Notes /G81/G20through /G87/G20are on page 11 www.irf.com 1 12/12/01 IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET ® Power MOSFET VDSS R DS(on) max I D 150V 0.032 Ω 60A PD - 94357 D 2Pak IRFS52N15D TO-220AB IRFB52N15D TO-262 IRFSL52N15D Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 60 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 43 A IDM Pulsed Drain Current /G81 240 PD @T A = 25°C Power Dissipation /G87 3.8 W PD @T C = 25°C Power Dissipation 320 Linear Derating Factor 2.1 W/ °C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt /G83 5.5 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw/G86 10 lbfin (1.1Nm) Absolute Maximum Ratings /G6CHigh frequency DC-DC converters Benefits

Applications

/G6CLow Gate-to-Drain Charge to Reduce Switching Losses /G6CFully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) /G6CFully Characterized Avalanche Voltage and Current Thermal Resistance Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.47 R θCS Case-to-Sink, Flat, Greased Surface /G86 0.50 ––– ° C/W R θJA Junction-to-Ambient/G86 ––– 62 R θJA Junction-to-Ambient/G87 ––– 40

2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 19 ––– ––– SV DS = 50V, ID = 36A Q g Total Gate Charge ––– 79 120 ID = 36A Q gs Gate-to-Source Charge ––– 25 37 nC V DS = 120V Q gd Gate-to-Drain ("Miller") Charge ––– 34 51 V GS = 10V, /G84 td(on) Turn-On Delay Time ––– 16 ––– VDD = 75V tr Rise Time ––– 47 ––– ID = 36A td(off) Turn-Off Delay Time ––– 28 ––– R G = 2.5Ω tf Fall Time ––– 25 ––– VGS = 10V/G20/G84 C iss Input Capacitance ––– 2770 ––– VGS = 0V C oss Output Capacitance ––– 590 ––– VDS = 25V C rss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz C oss Output Capacitance ––– 3940 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 260 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 550 ––– VGS = 0V, VDS = 0V to 120V /G85 Dynamic @ T J = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy/G82/G86 ––– 470 mJ IAR Avalanche Current/G81 ––– 36 A EAR Repetitive Avalanche Energy/G81 ––– 32 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) /G81/G86 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V T J = 25°C, IS = 36A, VGS = 0V/G20/G84 trr Reverse Recovery Time ––– 140 210 nS T J = 25°C, IF = 36A Q rr Reverse RecoveryCharge ––– 780 1170 nC di/dt = 100A/µs /G20/G84 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Diode Characteristics 240 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– VV GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.16 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance––– ––– 0.032 Ω VGS = 10V, ID = 36A/G20/G84 VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V V DS = VGS , ID = 250µA ––– ––– 25 µA VDS = 150V, VGS = 0V Gate-to-Source Forward Leakage ––– ––– 100 V GS = 30V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30VIGSS IDSS Drain-to-Source Leakage Current

www.irf.com 3 Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T , Junction Temperature ( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) /G20 /G20V = I = GS D 10V 60A 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) 5.0V 300µs PULSE WIDTH Tj = 25°C VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) 5.0V 300µs PULSE WIDTH Tj = 175°C VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS , Gate-to-Source Voltage (V) 1.00 10.00 100.00 1000.00 ID, Drain-to-Source Current TJ = 25°C TJ = 175°C VDS = 15V 300µs PULSE WIDTH

4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 1 10 100 1000 VDS , Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance(pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 Q , Total Gate Charge (nC) V , Gate-to-Source Voltage (V) G GS /G20I =D 36A /G20V = 30VDS V = 75VDS V = 120VDS VSD , Source-toDrain Voltage (V) 0.10 1.00 10.00 100.00 1000.00 ISD , Reverse Drain Current (A) TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 175°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS (on) 100µsec

www.irf.com 5 Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % R D VGS R G D.U.T. 10V -VDD Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 9. Maximum Drain Current Vs. Case Temperature 25 50 75 100 125 150 175 T , Case Temperature ( C) I , Drain Current (A) D 0.001 0.01 0.1 /G20 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE)

6 www.irf.com Q G Q GS Q GD VG Charge D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors 10 V Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS IAS R G IAS 0. 01Ωtp D.U.T LV DS - V DD DRIVER A 15V 20V 25 50 75 100 125 150 175 180 360 540 720 900 Starting Tj, Junction Temperature ( C) E , Single Pulse Avalanche Energy (mJ)AS /G20 ID TOP BOTTOM 15A 26A 36A

www.irf.com 7 P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS =10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W . Period Fig 14. For N-Channel HEXFET® Power MOSFETs * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit /G83 /G84/G82 R G VDD

• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance Current Transformer /G81

8 www.irf.com LEAD ASSI GNMENTS 1 - G ATE 2 - D RA IN 3 - S OU RC E 4 - D RA IN - B - 1.32 (.052 ) 1.22 (.048 ) 3X 0.55 (.022 ) 0.46 (.018 ) 2.92 (.115 ) 2.64 (.104 ) 4. 69 (.18 5) 4. 20 (.16 5) 3X 0.93 (.0 37) 0.69 (.0 27) 4.06 (.160 ) 3.55 (.140 ) 1.15 (.045 ) M IN 6.47 (.255 ) 6.10 (.240 ) 3.78 (.149 ) 3.54 (.139 ) - A - 10.54 (.415 ) 2.62 (.1 03) 15.24 (.600 ) 14.84 (.584 ) 14.09 (.5 55) 13.47 (.5 30) 3X 1.40 (.05 5) 1.15 (.04 5) 2. 54 (.100 ) 0.36 (.014 ) M B A M 1 2 3 NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 C O N TR O LLIN G D IM E NS ION : INC H 4 H EATS IN K & LEA D M E ASUR E M ENTS D O NOT I NCLUDE BURRS. TO-220AB Part Marking Information Dimensions are shown in millimeters (inches) LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN THE A SSEM BLY LINE "C " INTERNA TIO NA L REC TIFIER LO G O A SSEM BLY LO T C O DE PA RT NUM BER DAT E CODE YEAR 7 = 1997 WE E K 19 LINE C EXA M PLE: THIS IS A N IRF1010

www.irf.com 9 D 2Pak Package Outline D 2Pak Part Marking Information 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. - B - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - A - 1 3 15.49 (.610) 14.73 (.580) 3X 0.93 (.037) 0.69 (.027) 5.08 (.200) 3X 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) MAX. NOTES: 1 DI MENSI ONS AFTER SOLDER DI P. 2 DI MENSI ONI NG & TOLERANCI NG PER ANSI Y14.5M, 1982. 3 CONTROLLI NG DI MENSION : I NCH. 4 HEATSINK & LEAD DI MENSI ONS DO NOT INCLUDE BURRS. 0.55 (.022) 0.46 (.018) 0.25 (.010) M B A M MI NI MUM RECOMMENDED FOOTPRI NT 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) LEAD ASSI GNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 2.54 (.100) LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASSEM BLY LINE "L" A SSEM BLY LO T C O DE INTERNA TIO NA L REC TIFIER LO G O PA RT NUM BER DAT E CODE YEAR 0 = 2000 WE E K 02 LINE L F530S THIS IS A N IRF530S WITH

10 www.irf.com TO-262 Part Marking Information EXA M PLE: THIS IS A N IRL3103L LOT CODE 1789 A SSEM BLY PA RT NUM BER DAT E CODE WE E K 19 LINE C LO T C O DE YEAR 7 = 1997 AS S EMBLED ON WW 19, 1997 IN THE A SSEM BLY LINE "C " LO G O REC TIFIER INTERNA TIONAL

www.irf.com 11 /G81 Repetitive rating; pulse width limited by max. junction temperature. /G82 Starting TJ = 25°C, L = 0.72mH RG = 25Ω , IAS = 36A. /G83ISD ≤ 36A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS , TJ ≤ 175°C. Notes: /G84 Pulse width ≤ 300µs; duty cycle ≤ 2%. /G85 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . /G86 This is only applied to TO-220AB package. D 2Pak Tape & Reel Information TRR FEED DIRECTION 1. 85 (. 073) 1. 65 (. 065) 1. 60 (.063) 1. 50 (.059) 4. 10 (.161) 3. 90 (.153) TRL FEED DIRECTION 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4. 72 (.136) 4. 52 (.178) 24. 30 (.957) 23. 90 (.941) 0.368 (.0145) 0.342 (.0135) 1. 60 (.063) 1. 50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. 27.40 (1.079) 23. 90 (. 941) 60. 00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) NOTES : 1. COMFORMS TO EI A-418. 2. CONTROLLI NG DI MENSI ON: MI LLI METER. 3. DIMENSI ON MEASURED @ HUB. 4. I NCLUDES FLANGE DISTORTI ON @ OUTER EDGE. /G87 This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D), & Industrial (IRFS/SL52N15D) market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/01