VUB120-16NOX LITTELFUSE | Alldatasheet

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Technical content

~A6 ~E6 ~K6 M10/O10 W U S/T 3~ Rectifier Bridge + Brake Unit Standard Rectifier Module Part number VUB120-16NOX Backside: isolated Features / Advantages: Applications: Package:

  • Package with DCB ceramic base plate
  • Improved temperature and power cycling
  • Planar passivated chips
  • Very low forward voltage drop
  • Very low leakage current
  • X2PT - 2nd generation Xtreme light Punch Through
  • Rugged X2PT design results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic
  • Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance
  • 3~ Rectifier with brake unit for drive inverters V2-Pack
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Height: 17 mm
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3600 Information furnished is believed to be accurate an d reliable. However, users should independently evaluate the suitability of and test each product s elected for their own applications. Littelfuse prod ucts are not designed for, and may not be used in, all applications. Read comp lete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer-electronics. RRM 1600 I 180 FSM 1100 DAV V = V A A Rectifier CES 1200 Brake Chopper I 180 CE(sat) 1.7 C25 V = V A V IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.16 R 0.6 K/W R min. 180 VRSM V

100 T = 25°C VJ

T = °C VJ mA 2V = V R T = 25°C VJ I = A F V T = °C C 90 Ptot 205 WT = 25°C C R K/W 0.2 1600 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.55 T = 25°C VJ 125 VF0 V0.81 T = °C VJ 150 rF 4.4 mΩ V1.09 T = °C VJ I = A F V 1.59 I = A F 180 I = A F 180 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1600 max. repetitive reverse blocking voltage T = 25°C VJ CJ 37 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 150 1.10 1.19 4.37 4.25 kA kA A kA 935 1.01 6.05 5.89 1600 DAV d = rectangular ⅓ bridge output current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1700 IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

T = 125°C VCES V1200 collector emitter voltage collector emitter saturation voltage T = 25°C collector current A180 A C VJ Symbol Definition Ratings typ. max. min. Conditions Unit 140 VVCE(sat) total power dissipation 500 W collector emitter leakage current 7.5 V turn-on delay time 230 ns t reverse bias safe operating area A VGES V±20 VGEM max. transient gate emitter voltage T = °C C V Ptot gate emitter threshold voltage RBSOA 300 ±30 T = 125°C T = 125°C VJ V max. DC gate voltage IC25 IC T = 25°C VJ I = A; V = 15 V C GE T = 25°C VJ VGE(th) ICES I = mA; V = V C GE CE V = V ; V = 0 V CE CES GE IGES T = 25°C VJ gate emitter leakage current V = ±20 V GE 2.1 1.9 6.8 6 mA 0.1 mA 0.1 500 G(on) total gate charge V = V; V = 15 V; I = A CE Q GE C 340 nC t t t E E d(on) r d(off) f on off 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load V = V; I = A V = ±15 V; R = Ω CE C GE G V = ±15 V; R = ΩGE G V = V CEK 1200 short circuit safe operating area µs SCSOA

10 T = 125°C VJ V = V; V = ±15 CE GE short circuit duration t

SC R = Ω; non-repetitive G 450 A RthJC thermal resistance junction to case 0.10 K/W VRRM V1200 max. repetitive reverse voltage T = 25°C VJ T = 25°C forward current A48 A C

32 T = °C C

T = 25°C forward voltage V2.75 V VJ

1.60 T = 125°C VJ

VF I = A F T = 25°C reverse current mA 0.25 mA VJ 1T = 125°C VJ IR R RRM T = 125°C VJ Q I t rr RM rr 5.2 µC 50 A 300 ns reverse recovery charge max. reverse recovery current reverse recovery time V = -di /dt = A/µs F F Erec 1.9 mJ reverse recovery energy R RthJC thermal resistance junction to case 0.9 K/W V = V T = 25°C C T = 25°C VJ T = 125°C VJ VJ 100 100 100 6.8 6.8 6.8 600 720 1000 600 ICM 1.7 RthCH thermal resistance case to heatsink 0.25 K/W

0.3 RthCH thermal resistance case to heatsink K/W

V = V CEK 1200 I = A; V = 0 V GE IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

UL Date code Prod. Index Part Number yywwAA Lot.No: xxxxxx Data Matrix: Typ (1-19), DC+ Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Package Top °C MD Nm 2.5 mounting torque 2 TVJ °C 150 virtual junction temperature -40 Weight g76 Symbol Definition typ. max. min. Conditions operation temperature Unit V Vt = 1 second Vt = 1 minute isolation voltage mm mm 6.0 12.0 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 100 Aper terminal 125 -40 terminal to terminal V2-Pack Similar Part Package Voltage class VUB120-16NOXT V2-Pack 1600 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL VUB120-16NOX 520475 Box 6VUB120-16NOX Standard

3600 ISOL

Tstg °C 125 storage temperature -40 3000 threshold voltage V0.81 mΩ V0 max R0 max slope resistance * 3.2 1.31 Equivalent Circuits for Simulation T = VJ I V0 R0 Rectifier Brake Diode °C * on die level 150 IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

Remarks: EJOT PT® self-tapping screws of the dimension K25 are recommended for the mechanical connection between module and PCB. Choose the right length according to your board thickness at a maximum depth of 6 mm of the module holes. The recommended mounting torque is 1.5 Nm. S1 U1/ M1/O1 ~A6 ~E6 ~K6 M10/O10 W U S/T Outlines V2-Pack IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

0.001 0.01 0.1 1 400 500 600 700 800 900 2 3 4 5 6 7 8 9 0 11 103 104 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125 150 100 120 140 50Hz, 80% VRRM 100 150 200 TVJ = 45°C TVJ = 150°C TVJ= 45°C TVJ= 150°C TVJ = 125°C TVJ = 25°C I2t [A2s] IFSM [A] t [s] IF [A] VF [V] t [ms] Ptot [W] IF(AV)M [A] T amb [°C] IdAV [A] TC [°C] t [s] ZthJC [K/W] RthA :

0.1 K/W

0.3 K/W

0.6 K/W

1.0 K/W

1.5 K/W

2.5 K/W

DC = 0.5 0.4 0.33 0.17 0.08 Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode Fig. 3 I 2t vs. time per diode Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode Fig. 6 Transient thermal impedance junction to case vs. tim e per diode DC = 0.5 0.4 0.33 0.17 0.08 Constants for ZthJC calculation: i R th (K/W) t i (s) 1 0.040 0.004 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

0.001 0.01 0.1 1 0.01 0.1 6 7 8 9 10 11 12 13 100 150 200 IC [A] t [ns] VF [V] t [s] ZthJC [K/W] Fig.2 Typ. output characteristics IGBT Fig. 3 Typ. transfer charact. IGBT Fig. 6 Typ. forward characteristics Diode Fig. 9 Transient thermal resistance junction to case 100 150 200 IC [A] VCE [V] Fig.1 Output characteristics IGBT 0 1 2 3 4 100 150 200 IC [A] VCE [V] VGE [V] 4 8 12 16 20 24 0.0 0.5 1.0 1.5 2.0 2.5 100 125 0 10 20 30 40 50 60 IF [A] Irr Erec Erec [mJ] RG [Ohm] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode 0 50 100 150 200 100 200 300 400 500 Eoff [mJ] IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 0 50 100 150 200 100 200 300 400 Eon [mJ] IC [A] td(on) Eon Fig. 4 Typ. turn-on energy & switch. times vs. collector current tr tr [ns] Erec [mJ] Irr [A] Irr [A] 25°C 125°C 9 V 11 V 13 V 25°C 125°C Eoff tf td(off) IF [A] 25°C 125°C Erec Irr VCE = 20 VVGE = 19 V 17 V 15 V TVJ = 125°C VR = 600 V IF = 30 A Diode IGBT TVJ = 150°C Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C RG = 6.8 Ohm VCE = 600 V VGE = ±15 V TVJ = 125°C RG = 6.8 Ohm VR = 600 V TVJ = 125°C Brake IGBT + Diode IXYS reserves the right to change limits, condition s and dimensions. 20191220h Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved