50RIA VISHAY | Alldatasheet

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Document Number: 93711 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 1 Medium Power Thyristors (Stud Version), 50 A 50RIA Series Vishay High Power Products

FEATURES

  • High current rating  Excellent dynamic characteristics  dV/dt = 1000 V/µs option  Superior surge capabilities  Standard package  Metric threads version available  Types up to 1200 V V DRM/VRRM  RoHS compliant TYPICAL APPLICATIONS  Phase control applications in converters  Lighting circuits  Battery charges  Regulated power supplies and temperature and speed control circuit  Can be supplied to meet stringent military, aerospace and other high reliability requirements PRODUCT SUMMARY IT(AV) 50 A TO-208AC (TO-65) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IT(AV) 50 A TC 94 °C IT(RMS) 80 A ITSM

50 Hz 1430

A

60 Hz 1490

50 Hz 10.18 kA2s 60 Hz 9.30 VDRM/VRRM 100 to 1200 V tq Typical 110 µs TJ - 40 to 125 °C

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93711

2 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A ELECTRICAL SPECIFICATIONS Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with tp ≤ 5 ms VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50RIA 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at case temperature IT(AV) 180° sinusoidal conduction 50 A 94 °C Maximum RMS on-state current I T(RMS) 80 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 1430 A t = 8.3 ms 1490 t = 10 ms 100 % VRRM reapplied 1200 t = 8.3 ms 1255 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 10.18 kA2s t = 8.3 ms 9.30 t = 10 ms 100 % VRRM reapplied 7.20 t = 8.3 ms 6.56 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 101.8 kA 2√s Low level value of threshold voltage V T(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.94 V High level value of threshold voltage V T(TO)2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 1.08 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 4.08 mΩ High level value of on-state slope resistance rt2 (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ maximum 3.34 Maximum on-state voltage V TM Ipk = 157 A, TJ = 25 °C 1.60 V Maximum holding current I H TJ = 25 °C, anode supply 22 V, resistive load, initial IT = 2 A 200 mA Latching current I L Anode supply 6 V, resistive load 400

Document Number: 93711 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 3 50RIA Series Medium Power Thyristors (Stud Version), 50 A Vishay High Power Products Note (1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum rate of rise of turned-on current VDRM ≤ 600 V dI/dt TC = 125 °C, VDM = Rated VDRM, Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A 200 A/µs VDRM ≤ 1600 V 100 Typical delay time t d TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit Gate pulse = 10 V, 15 Ω source, tp = 20 µs 0.9 µs Typical turn-off time t q TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs dIr/dt = - 10 A/µs, VR = 50 V 110 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 100 % rated VDRM 200 V/µs TJ = TJ maximum linear to 67 % rated VDRM 500 (1) TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P GM TJ = TJ maximum, tp ≤ 5 ms 10 W Maximum average gate power P G(AV) 2.5 Maximum peak positive gate current I GM 2.5 A Maximum peak positive gate voltage +V GM 20 V Maximum peak negative gate voltage -V GM 10 DC gate current required to trigger I GT TJ = - 40 °C Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied 250 mAT J = 25 °C 100 TJ = 125 °C 50 DC gate voltage required to trigger V GT TJ = - 40 °C 3.5 V TJ = 25 °C 2.5 DC gate current not to trigger I GD TJ = TJ maximum, VDRM = Rated voltage Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V DRM anode to cathode applied 5.0 mA DC gate voltage not to trigger V GD TJ = TJ maximum 0.2 V

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93711

4 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction and storage temperature range TJ, TStg - 40 to 125 °C Maximum thermal resistance, junction to case RthJC DC operation 0.35 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.25 Allowable mounting torque Non-lubricated threads 3.4 + 0 - 10 % (30) N · m (lbf · in) Lubricated threads 2.3 + 0 - 10 % (20) Approximate weight 28 g 1.0 oz. Case style See dimensions - link at the end of datasheet TO-208AC (TO-65) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANG ULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.078 0.057 TJ = TJ maximum K/W 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 100 110 120 130 0 1 02 03 04 05 06 0 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Angle 50RIA Series R (DC) = 0.35 K/W thJC 100 110 120 130 0 1 02 03 04 05 06 07 08 0 DC 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 50RIA Series R (DC) = 0.35 K/W thJC

Document Number: 93711 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 19-Sep-08 5 50RIA Series Medium Power Thyristors (Stud Version), 50 A Vishay High Power Products Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics 0 1 02 03 04 05 0 RMS Limit Conduction Angle 180° 120° 90° 60° 30° Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series T = 125°C J 100 0 1 02 03 04 05 06 07 08 0 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series T = 125°C J 600 700 800 900 1000 1100 1200 1300 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge. RRM Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 50RIA Series 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V Reapplied RRM J 50RIA Series 100 1000 T = 25°C J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°C J 50RIA Series

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93711

6 Revision: 19-Sep-08

Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A Fig. 8 - Thermal Impedance ZthJC Characteristics Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJ-hs Steady State Value R = 0.35 K/W thJ-hs Transient Thermal Impedance Z (K/W) 50RIA Series 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) Tj=25 °C Tj=-40 °C (1) (2) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) Recommended load line for b) Recommended load line for tr<=1 µs Rectangular gate pulse rated di/dt : 20V, 30 ohms; tr<=0.5 µs <=30% rated di/dt : 20V, 65 ohms (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs (3) (4) Tj=125 °C 50RIA Series Frequency Limited by PG(AV) - Current code - Essential part number - Voltage code x 10 = V RRM (see Voltage Ratings table) None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2 A M = Stud base TO-208AC (TO-65) M6 x 1 - Critical dV/dt: None = 500 V/µs (standard value) S90 = 1000 V/µs (special selection) Device code 513 24

50 RIA 120 S90 M

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95334

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.