50RIA20

50RIA80 IRF | Alldatasheet

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Excellent dynamic characteristics dv/dt = 1000V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / VRRM

Bulletin I2401 rev. A 07/00 www.irf.com Voltage V DRM /VRRM , max. repetitive V RSM , maximum non- I DRM /IRRM max. Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ TJ = TJ max. VV m A 10 100 150 20 200 300 40 400 500 60 600 700 50RIA 80 800 900 15 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 IT(AV) Max. average on-state current 50 50 A 180° sinusoidal conduction @ Case temperature 94 90 °C IT(RMS) Max. RMS on-state current 80 80 A ITSM Max. peak, one-cycle 1430 1200 A t = 10ms No voltage non-repetitive surge current 1490 1257 t = 8.3ms reapplied 1200 1010 t = 10ms 100% V RRM 1255 1057 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 10.18 7.21 KA 2s t = 10ms No voltage Initial T J = TJ max. 9.30 6.58 t = 8.3ms reapplied 7.20 5.10 t = 10ms 100% V RRM 6.56 4.65 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 101.8 72.1 KA 2√s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. VT(TO)1 Low level value of threshold 0.94 1.02 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. voltage VT(TO)2 High level value of threshold 1.08 1.17 ( π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. voltage rt1 Low level value of on-state 4.08 4.78 m Ω (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state 3.34 3.97 ( π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. slope resistance VTM Max. on-state voltage 1.60 1.78 V I pk= 157 A, TJ = 25°C IH Maximum holding current 200 mA T J = 25°C. Anode supply 22V, resistive load, Initial IT = 2A IL Latching current 400 Anode supply 6V, resistive load 50RIA 10 to 120 140 to 160Parameter Units Conditions ELECTRICAL SPECIFICATIONS Voltage Ratings On-state Conduction (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with t p ≤ 5ms

Bulletin I2401 rev. A 07/00 www.irf.com dv/dt Max. critical rate of rise of 200 T J = TJ max. linear to 100% rated V DRM off-state voltage 500 (*) T J = TJ max. linear to 67% rated V DRM V/µs Parameter 50RIA Units Conditions Blocking PGM Maximum peak gate power 10 T J = TJ max, tp ≤ 5ms PG(AV) Maximum average gate power 2.5 IGM Max. peak positive gate current 2.5 A +VGM Maximum peak positive gate voltage -VGM Maximum peak negative gate voltage IGT DC gate current required 250 T J = - 40°C to trigger 100 mA T J = 25°C

50 T J = 125°C

VGT DC gate voltage required 3.5 T J = - 40°C to trigger 2.5 V T J = 25°C W V Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied VGD DC gate voltage not to trigger 0.2 V T J = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied Parameter 50RIA Units Conditions TJ = TJ max VDRM = rated voltageIGD DC gate current not to trigger 5.0 mA Triggering di/dt Max. rate of rise of turned-on T C = 125°C, VDM = rated VDRM current V DRM ≤ 600V 200 A/µs Gate pulse = 20V, 15 Ω , tp = 6µs, tr = 0.1µs max. VDRM ≤ 1600V 100 I TM = (2x rated di/dt) A td Typical delay time 0.9 T C = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15Ω source, tp = 20µs tq Typical turn-off time 110 T C = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, V R=50V Parameter 50RIA Units Conditions Switching µs (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.

Bulletin I2401 rev. A 07/00 www.irf.com TJ Max. operating temperature range - 40 to 125 °C Tstg Max. storage temperature range - 40 to 125 °C RthJC Max. thermal resistance, 0.35 K/W DC operation junction to case RthCS Max. thermal resistance, 0.25 K/W Mounting surface, smooth, flat and greased case to heatsink T Mounting torque Min. 2.8 (25) Nm Non-lubricated threads Max. 3.4 (30) (lbf-in) wt Approximate weight 28 (1.0) g (oz) Case style TO-208AC (TO-65) See Outline Table Parameter 50RIA Units Conditions Thermal and Mechanical Specification ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.078 0.057 K/W T J = TJ max. 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Ordering Information Table

50 RIA 160 S90 M

3 - Voltage code: Code x 10 = V RRM (See Voltage Rating Table) 4 - Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection) 5 - None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M = Stud base TO-208AC (TO-65) M6 X 1

Bulletin I2401 rev. A 07/00 www.irf.com Outline Table Fig. 1 - Current Ratings Characteristic 100 110 120 130 0 1 02 03 04 05 06 0 30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Angle 50RIA Series (100V to 1200V) R (DC) = 0.35 K/WthJC 100 110 120 130 0 1 02 03 04 05 06 07 08 0 DC30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 50RIA Series (100V to 1200V) R (DC) = 0.35 K/WthJC Fig. 2 - Current Ratings Characteristic Case Style TO-208AC (TO-65) All dimensions in millimeters (inches)

Bulletin I2401 rev. A 07/00 www.irf.com Fig. 3 - On-state Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-state Power Loss Characteristics 0 1 02 03 04 05 0 RMS Limit Conduction Angle 180° 120° 90° 60° 30° Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series (100V to 1200V) T = 125°C J 100 0 1 02 03 04 05 06 07 08 0 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series (100V to 1200V) T = 125°C J 600 700 800 900 1000 1100 1200 1300 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 50RIA Series (100V to 1200V) 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J 50RIA Series (100V to 1200V) Fig. 8 - Current Ratings CharacteristicsFig. 7 - Current Ratings Characteristics 100 110 120 130 0 5 10 15 20 25 30 35 40 45 50 5 5 30° 60° 90° 120° 180° Average On-state Current (A) Maximum All owable Case Temperature (°C) Conduction Angle 50RIA Series (1400V to 1600V) R (DC) = 0.35 K/WthJC 100 110 120 130 0 1 02 03 04 05 06 07 08 09 0 DC30° 60° 90° 120° 180° Average On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 50RIA Series (1400V to 1600V) R (DC) = 0.35 K/WthJC

Bulletin I2401 rev. A 07/00 www.irf.com Fig. 14 - Forward Voltage Drop Characteristics Fig. 9 - On-state Power Loss Characteristics Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current Fig. 10 - On-state Power Loss Characteristics 0 5 10 15 20 25 30 35 40 45 50 RMS Limit Conduction Angle 180° 120° 90° 60° 30° Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series (1400V to 1600V) T = 125°C J 100 110 120 0 1 02 03 04 05 06 07 08 0 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period Maximum Average On-state Power Loss (W) Average On-state Current (A) 50RIA Series (1400V to 1600V) T = 125°C J 500 600 700 800 900 1000 1100 11 0 1 0 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 50RIA Series (1400V to 1600V) Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J 50RIA Series (1400V to 1600V) Fig. 13 - Forward Voltage Drop Characteristics 100 1000 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 50RIA Series (1400V to 1600V) T = 125°CJ 100 1000 T = 25°CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125°CJ 50RIA Series (100V to 1200V)

Bulletin I2401 rev. A 07/00 www.irf.com Fig. 15 - Thermal Impedance Z thJC Characteristics Fig. 16 - Gate Characteristics 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) thJ-hs Steady State Value R = 0.35 K/WthJ-hs Transient Thermal Impedance Z (K/W) 50RIA Series 0.1 100 0.001 0.01 0.1 1 10 100 1000 VGD IGD (b) (a) Tj=25 °C Tj=-40 °C (1) (2) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) Recommended load line for b) Recommended load line for tr<=1 µs Rectangular gate pulse rated di/dt : 20V, 30 ohms; tr<=0.5 µs <=30% rated di/dt : 20V, 65 ohms (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs (3) (4) Tj=125 °C 50RIA Series Frequency Limited by PG(AV)