50PT12SM NELLSEMI | Alldatasheet

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(Stud Version), 50A TO-208AC(TO-65) PRODUCT SUMMARY IT(AV) 50A MAJOR RATINGS AND CHARACTERISTICS PARAMETER UNITS VV /VDRM RRM ITSM IT(AV) 2I t tq 2Ka s A A ºC TEST CONDITIONS VALUES IT(RMS) TC µs A 78.5 1430 1490 10.22 9.32 600 to 1600 110 50 HZ 60 HZ 50 HZ 60 HZ Typical Available RoHS* COMPLIANT TJ ºC-40 to 125 Improved glass passivation for high reliability High current rating Excellent dynamic characteristics dV/dt = 1000 V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V /VDRM RRM RoHs compliant Phase control applications in converters Lighting circuits Battery charges Regulated power supplies temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high reliability requirements www.nellsemi.com

PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES Maximum average forward current at case temperature IT(AV) 180° conduction, half sine wave IT(RMS)Maximum RMS on-state current 50 A 94 ºC 78.5 Maximum peak, one-cycle non-reptitive surge current ITSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied 2I t Sinusoidal half wave, initial T = T maximum J J 1430 1490 1200 1255 10.22 9.32 7.23 6.59 2A s A A 102.2t = 0.1 to 10 ms, no voltage reapplied, 2I √t Maximum l²t for fusing Maximum l²√t for fusing 2A √s Low level value of threshold voltage VT(TO)1 0.94 V High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance 4.08 mΩ High level value of on-state slope resistance Maximum on-state voltage Maximum holding current 150 mA Latching current 300 rt1 rt2 VTM lH lL T = T maximumJ J (16.7 % x πx l < l < ),T(AV) πx lT(AV) T = T maximumJ J ( ),T =T maximumJ Jπx l < I < 20 × π× I T(AV) T(AV) T = T maximumJ J (16.7 % x πx l < l < ),T(AV) πx lT(AV) T = T maximumJ J ( ),πx l < I < 20 × π× lT(AV) T(AV) T = T maximumJ J l = 157 A, T = 25°Cpk J T = 25 °C, anode supply 22 V, resistive loadJ 1.08 3.34 1.60 V Page 2 of 7www.nellsemi.com ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGETYPE VDRM/VRRM, MAXIMUM VRSM, MAXIMUM IDRM/IRRM, MAXIMUM NUMBER CODE REPETITIVE PEAK AND NON-REPETITIVE (2)PEAK VOLTAGE AT T = T J J MAXIMUM V V mA 06 600 700 08 800 900 50PT 1000 1100 1510 12 1200 1300 16 1600 1700 Note (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with tp ≤ 5 ms initial l = 2AT Anode supply 6V , resistive load (1)OFF-STATE VOLTAGE 50PTS Series

Page 3 of 7www.nellsemi.com SEMICONDUCTOR RoHS RoHS Nell High Power Products SWITCHING Maximum rate of rise of turned-on current A/µs 150 Typical delay time 0.9 µs Typical turn-off time 110 BLOCKING Maximum critical rate of rise of off-state voltage dV/dt V/µs 1000 T = c dIr/dt = - 10 A/µs, V = 50VR 125 °C PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES T = 25 °C,c Gate pulse = 10V, 15Ω source, t = 20µs pcircuit T = 125 °C µsC I = 0.3A, dI /dt = 0.3 A/µsG G , V = 2/3 V , t = 200 DM DRM P dl/dt td tq PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES T = 125°C,V =2/3 V , gate openJ D DRM V = Rated V , I = 10 A dc resistive DM DRM TM ,ITM = 50A, reapplied dV/dt = 20 V/µs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM 10 Maximum average gate power PG(AV) 2.5 W Maximum peak positive gate current IGM 2.5 A Maximum peak positive gate voltage +VGM 20 V 250

100 DC gate current required to trigger IGT Maximum required gate trigger

current/voltage are the lowest value which will trigger all units

6 V anode to cathode applied

3.5

2.0 DC gate voltage required to trigger VGT

V DC gate current not to trigger IGD 5.0 mA DC gate voltage not to trigger VGD 0.2 V T = T maximum, t ≤ 5 msJ J p T = -40°CJ T = 25°CJ T = 125°CJ T = -40°CJ T = 25°CJ T = T maximum, J J Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated V anode toDRM cathode applied T = T maximum,J J THERMAL AND MECHANICAL SPECIFCATIONS PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES Maximum operating junction and storage temperature range - 40 to125 ºC 0.25 K/W Maximum thermal resistace, junction to case Maximum thermal resistance case to heatsink 0.35 (20) 0.56 (lbf · in) N · m Allowable mounting torque Approximate weight Case style TO-208AC (TO-65) T ,J Tstg RthJC RthCS (lbf · in) N · m g oz. Not-lubricated threads Lubricated threads Mounting surface, smooth, flat and greased DC operation See dimensions - link at the end of datasheet (30) 3.4 +0 -10% 2.3+0 -10% -VGMMaximum peak negative gate voltage V = Rated valueDRM 50PTS Series

∆RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITS TEST CONDUCTIONS K/W 180° 120° 90° 60° 30° 0.078 0.094 0.120 0.176 0.294 0.057 0.098 000..1130 0.183 0.296 T = T maximumJ J

  • The table above shows the increment of thermal resistance R when devices thJC Note operate at different conduction angles than DC Maximum allowable case temperature(˚C) 0 10 40 5030 0 10 20 30 40 Average on-state current (A) Average on-state current (A) Maximum allowable case temperature(˚C) 30° 60° 90° 120° 180° 50PTS Series R (DC)=0.35K/WthJC Conduction Period 130 120 110 100 130 120 110 100 Page 4 of 7www.nellsemi.com Maximum allowable on-state power loss(W) 0 4010 20 30 50 1 10 100 Average on-state current (A) Number of equal amplitude half cycle current pulses (N) Peak half sine wave on-state current(A) 50PTS Series T = 125°CJ Conduction Angle 30° 60° 90° 120° 180° 1100 1000 900 800 700 600 Conduction Angle 50PTS Series R (DC)=0.35K/WthJC 30° 60° 120° 180° 90° 20 60 DC 50 60 70 80 RMS Limit @ 60Hz 0.0083 s @ 50Hz 0.0100 s At Any Rated Load Condition And With Rated V Applied Following SurgeRRM initial T = 125°CJ 50PTS Series 1200 1300 Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics Fig.3 On-state power loss characteristics Fig.4 Maximum non-repetitive surge current 50PTS Series

Maximum allowable on-state power loss (W) 0 2010 40 50 6030 0.01 0.1 1 Average on-state current (A) Pulse train duration (S) Peak half sine wave on-state current Conduction Period Page 5 of 7 1100 1000 900 800 700 600 100 www.nellsemi.com RMS Limit 30° 60° 90° 120° 180° DC 50PTS Series T = 125°CJ 70 80 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T = 125°CJ No Voltage Reapplied Rated V ReappliedRRM 50PTS Series 500 1200 1300 1400 1500 T = 125°CJ T = 25°CJ 50PTS Series 100 1000 Instantaneous on-state voltage (V) 0.001 0.01 1010.1 0.01 0.1 50PT Series Steady State Value R = 0.35K/WthJ-hs Fig.5 On-state power loss characteristics Fig.6 Maximum non-repetitive surge current Fig.7 Forward voltage drop characteristics Instantaneous on-state current (A) Fig.8 Thermal impedance Z Characteristics thJC Square wave pulse duration Transient Thermal impedance Z (K/W)thJ-hs 50PTS Series

Page 6 of 7www.nellsemi.com Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5µs b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 µs (b) (a) (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs (1) (2) (3) (4) 50PTS Series Frequency Limited by PG(AV) VGD IGD Tj = -40°C Tj = 25°C Tj = 125°C ORDERING INFORMATION TABLE - Current Code - for SCR series - S for stud type Device code PT M50 12 S 1 2 3 4 5 - Voltage code × 100 = VRRM (see Voltage Ratings table) - None = Stud base TO-208AA (TO-65) 1/4”-28 UNF-2A M = Stud base M6×1TO-208AA (TO-65) Fig.9 Gate characteristics Instantaneous gate current (A) 0.1 100 10001 100.010.001 0.1 100 Instantaneous gate voltage (V) 50PTS Series

www.nellsemi.com (0.2/0.3) 2.5/3.6 (0.1/0.14) Ø1.1/Ø1.4 (Ø0.043/Ø0.055) Ø15.0(Ø0.59) 1/4”28UNF-2A 19.2(0.75) 2.7(0.106) 1.7/1.8 (0.06/0.07) 17.2/17.35 (0.67/0.68) (0.42/0.46) 10.7/11.5 14.5(0.57) MAX 3.0(0.118) Min 31.0(1.22) Max All dimensions in millimeters(inches) K G A 50PTS Series