DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 /C0109s Short−Circuit Capability
  • This is a Pb−Free Device Typical Applications
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 600 V Collector current @ TC = 25°C @ TC = 100°C IC 100 A Diode Forward Current @ TC = 25°C @ TC = 100°C IF 100 A Diode Pulsed Current TPULSE Limited by TJ Max IFM 200 A Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time V GE = 15 V, VCE = 400 V, TJ ≤ +150°C tSC 5 /C0109s Gate−emitter voltage VGE /C003620 V VTransient gate−emitter voltage (TPULSE = 5 /C0109s, D < 0.10) /C003630 Power Dissipation @ TC = 25°C @ TC = 100°C PD 417 208 W Operating junction temperature range TJ −55 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO−247 CASE 340ALC G

50 A, 600 V

VCEsat = 1.80 V EOFF = 0.46 mJ E Device Package Shipping

ORDERING INFORMATION

NGTB50N60FL2WG T O−247 (Pb−Free)

30 Units / Rail

www.onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM 50N60FL2 AYWWG G E C

www.onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junction−to−case, for IGBT R/C0113JC 0.36 °C/W Thermal resistance junction−to−case, for Diode R/C0113JC 0.60 °C/W Thermal resistance junction−to−ambient R/C0113JA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 /C0109A V(BR)CES 600 − − V Collector−emitter saturation voltage VGE = 15 V, IC = 50 A VGE = 15 V, IC = 50 A, TJ = 175°C VCEsat 1.50 1.80 2.19 2.00 V Gate−emitter threshold voltage VGE = VCE, IC = 350 /C0109A VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − 0.5 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA DYNAMIC CHARACTERISTIC Input capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies − 5328 − pF Output capacitance Coes − 252 − Reverse transfer capacitance Cres − 148 − Gate charge total VCE = 480 V, IC = 50 A, VGE = 15 V Qg − 220 − nC Gate to emitter charge Qge − 52 − Gate to collector charge Qgc − 116 − SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time TJ = 25°C VCC = 400 V, IC = 50 A Rg = 10 /C0087 VGE = 0 V/ 15 V td(on) − 100 − ns Rise time tr − 47 − Turn−off delay time td(off) − 237 − Fall time tf − 67 − Turn−on switching loss Eon − 1.50 − mJ Turn−off switching loss Eoff − 0.46 − Total switching loss Ets − 1.96 − Turn−on delay time TJ = 150°C VCC = 400 V, IC = 50 A Rg = 10 /C0087 VGE = 0 V/ 15 V td(on) − 90 − ns Rise time tr − 49 − Turn−off delay time td(off) − 245 − Fall time tf − 96 − Turn−on switching loss Eon − 1.90 − mJ Turn−off switching loss Eoff − 0.83 − Total switching loss Ets − 2.73 − DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 50 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − 2.10 2.20 2.90 V Reverse recovery time TJ = 25°C IF = 50 A, VR = 400 V diF/dt = 200 A//C0109s trr − 94 − ns Reverse recovery charge Qrr − 0.45 − /C0109C Reverse recovery current Irrm − 8 − A Reverse recovery time TJ = 175°C IF = 50 A, VR = 400 V diF/dt = 200 A//C0109s trr − 170 − ns Reverse recovery charge Qrr − 1.40 − /C0109C Reverse recovery current Irrm − 13 − A Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 27. Definition of Turn On Waveform

Figure 28. Definition of Turn Off Waveform

www.onsemi.com PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE C D L b E

0.25 M BA M

c A 123 B e

0.635 M BA MA

S P SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. DIM MIN MAX MILLIMETERS D 20.80 21.34 E 15.50 16.25 A 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 BSC A1 2.20 2.60 c 0.40 0.80 L 19.80 20.80 Q 5.40 6.20 E2 4.32 5.49 L1 3.81 4.32 P 3.55 3.65 S 6.15 BSC b4 2.60 3.40 NOTE 6 NOTE 7 Q NOTE 4 NOTE 3 NOTE 5 E2/2 NOTE 4 F 2.655 --- F ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries i n the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . A listing of ON Semiconductor’s product/patent ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the right s of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NGTB50N60FL2W/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative