50N06L-TND-R

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UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-088.G

50 Amps, 60 Volts

 DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) < 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( C RSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F TO-252 TO-251 TO-263 1 1 TO-252D  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 50N06L-TA3-T 50N06G-TA3-T TO-220 G D S Tube 50N06L-TF3-T 50N06G-TF3-T TO-220F G D S Tube 50N60L-TM3-T 50N60G-TM3-T TO-251 G D S Tube 50N06L-TN3-T 50N06G-TN3-T TO-252 G D S Tube 50N06L-TN3-R 50N06G-TN3-R TO-252 G D S Tape Reel 50N60L-TND-T 50N60G-TND-T TO-252D G D S Tube 50N06L-TND-R 50N06G-TND-R TO-252D G D S Tape Reel 50N06L-TQ2-T 50N06G-TQ2-T TO-263 G D S Tube 50N06L-TQ2-R 50N06G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current TC = 25°C ID 50 A TC = 100°C 35 A Pulsed Drain Current (Note 2) I DM 200 A Avalanche Energy Single Pulsed (Note 3) E AS 480 mJ Repetitive (Note 2) E AR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns Power Dissipation (TC=25°C) TO-220/TO-263 PD 120 W TO-220F 70 W TO-251/TO-252 TO-252D 46 W Junction Temperature T J +150 °C Operation and Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.38mH, I AS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C 4. I SD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/TO-220F TO-263 θJA 62 °C/W TO-251/TO-252 TO-252D 100 °C/W Junction to Case TO-220 θJC 1.24 °C/W TO-220F 1.78 °C/W TO-251/TO-252 TO-252D 2.7 °C/W TO-263 1.24 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current I DSS V DS = 60 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse V GS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250 μA, Referenced to 25°C 0.07 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 25 A 18 23 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS = 0 V, VDS = 25 V f = 1MHz 900 1220 pF Output Capacitance C OSS 430 550 pF Reverse Transfer Capacitance C RSS 80 100 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 30V, ID =25 A, RG = 50Ω (Note 1, 2) 40 60 ns Turn-On Rise Time t R 100 200 ns Turn-Off Delay Time t D(OFF) 90 180 ns Turn-Off Fall Time t F 80 160 ns Total Gate Charge Q G VDS = 48V, VGS = 10 V ID = 50A (Note 1, 2) 30 40 nC Gate-Source Charge Q GS 9.6 nC Gate-Drain Charge Q GD 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD I S = 50A, VGS = 0 V 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS 50 A Maximum Pulsed Drain-Source Diode Forward Current ISM 200 A Reverse Recovery Time t RR IS = 50A, VGS = 0 V dIF / dt = 100 A/μs 54 ns Reverse Recovery Charge Q RR 81 μC Notes: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RG 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) 0.0 Drain Current, ID (A) 40 80 200100 140 0.5 1.0 1.5 2.0 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage, VSD (V) On State Current vs. Allowable Case Temperature VGS=20V *Note: 1. VGS=0V 2. 250µs Test 25°C 150°C VGS=10V

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G  TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS(Normalized) Junction Temperature, TJ (°C) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, RDS(ON), (Normalized) -50 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (°C) *Note: 1. VGS=10V 2. ID=25A 101 100 10-1 Drain-Source Voltage, VDS (V) Drain Current , ID,(A) Maximum Safe Operating 10-1 103 Drain Current, ID (A) Case Temperature, TC (°C) 75 100 150 Maximum Drain Current vs. Case Temperature 1255025 100 101 102 Operation in This Area by RDS (on) *Note: 1. T c=25°C 2. TJ=150°C 3. Single Pulse 100µs 1ms 10ms 10ms 102 Thermal Response, ZθJC (t)

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 8 . G UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.