50N06 CHONGQING | Alldatasheet
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- 页码 - Rev. 14-1 http:// www.perfectway.cn 50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Lowgatecharge LowCiss Fastswitching 100%avalanchetested Improveddv/dtcapability TO-220AB ITO-220AB 50N06 50N06F TO-263 TO-262 50N06B 50N06H Absolute Maximum Ratings(TC=25℃,unlessotherwisenoted) Parameter Symbol 50N06 UNIT Drain-SourceVoltage VDSS 60 V Gate-SourceVoltage VGSS ±20 ContinuousDrainCurrent ID 52.4 A PulsedDrainCurrent(Note1) IDM 210 SinglePulseAvalancheEnergy(Note2) EAS 990 mJ AvalancheCurrent(Note1) IAR 52.4 A RepetitiveAvalancheEnergy(Note1) EAR 12 mJ ReverseDiodedV/dt(Note3) dv/dt 7.0 V/ns OperatingJunctionandStorageTemperatureRange TJ,TSTG -55to+150 ℃ Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds TL 260 ℃ MountingTorque 6-32orM3screw 10 lbf·in
1.1 N·m
Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units MaximumJunction-to-Case RthJC 1.66 0.83 0.83 ℃/W MaximumPowerDissipation TC=25℃ PD 75 150 150 W
- 页码 - Rev. 14-1 http:// www.perfectway.cn Electrical Characteristics (Tc=25℃,unlessotherwisenoted) Parameter Symbol Test Conditions Mix Typ Max Units Off Characteristics Drain-SourceBreakdownVoltage BVDSS VGS=0V,ID=250uA 60 － － V BreakdownTemperatureCoefficient ΔBVDSS /ΔTJ Referenceto25℃， ID=250uA － 0.6 － V/℃ ZeroGateVoltageDrainCurrent IDSS VDS=60V,VGS=0V － － 1 uA Gate-BodyLeakageCurrent,Forward IGSSF VGS=20V,VDS=0V － － 100 nA Gate-BodyLeakageCurrent,Reverse IGSSR VGS=-20V,VDS=0V － － -100 nA On Characteristics Gate-SourceThresholdVoltage VGS(th) VDS=10V,ID=250uA 2.0 － 4.0 V Drain-SourceOn-StateResistance RDS(on) VGS=10V,ID=25A － － 16 mΩ Dynamic Characteristics InputCapacitance Ciss VDS=25V,VGS=0V, f=1.0MHZ － 1250 1630 pF OutputCapacitance Coss － 445 580 pF ReverseTransferCapacitance Crss － 90 120 pF Switching Characteristics Turn-OnDelayTime td(on) VDD=30V,ID=50A, RG=25Ω (Note4,5) － 20 50 ns Turn-OnRiseTime tr － 380 770 ns Turn-OffDelayTime td(off) － 80 170 ns Turn-OffFallTime tf － 145 300 ns TotalGateCharge Qg VDS=48V,ID=50A, VGS=5V,(Note4,5) － 24.5 32 nC Gate-SourceCharge Qgs － 6 － nC Gate-DrainCharge Qgd － 14.5 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings ContinuousDiodeForward Current IS － － 50 A PulsedDiodeForwardCurrent ISM － － 200 A DiodeForwardVoltage VSD IS=50A,VGS=0V － － 1.5 V ReverseRecoveryTime trr VGS=0V,IS=50A, dIF/dt=100A/us, (Note4) － 65 － ns ReverseRecoveryCharge Qrr － 125 － uC Notes 1. RepetitiveRating:pulsewidthlimitedbymaximumjunctiontemperature. 2. VDD=10V,,L=0.8mH,Rg=25Ω,IAS=50A,TJ=25℃. 3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,startingTJ=25℃. 4. Pulsewidth≤300us;dutycycle≤2%. 5. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature.