50N06

50N06 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET w w w . u n i s o n i c . c o m . t w 1 of 8 Copyright © 2005 Unisonic Technologies Co., Ltd QW-R502-088,A

50 Amps,60 Volts

„ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A , fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. „ FEATURES * RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-220F *Pb-free plating product number: 50N06L „ ORDERING INFORMATION Order Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 50N06-TA3-T 50N06L-x-TA3-T TO-220 G D S Tube 50N06-TF3-T 50N06L-x-TF3-T TO-220F G D S Tube 50N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw QW-R502-088,A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate to Source Voltage V GSS ±20 V TC = 25Ċ 50 A Continuous Drain Current TC = 100Ċ ID 35 A Drain Current Pulsed (Note 1) I DM 200 A Single Pulsed Avalanche Energy (Note 2) E AS 480 mJ Repetitive Avalanche Energy (Note 1) E AR 13 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7 V/ns Total Power Dissipation (TC = 25Ċ) 130 W Derating Factor above 25Ċ PD 0.9 W/ Ċ Operation Junction Temperature T J -55 ~ +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance, Junction-to-Case θJC 1.15 °C/W Thermal Resistance, Case-to-Sink θCS 0.5 °C/W Thermal Resistance, Junction-to-Ambient θJA 62.5 °C/W „ ELECTRICAL CHARACTERISTICS TC = 25Ċ unless otherwise specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 60 V Breakdown Voltage Temperature Coefficient BV¶ DSS/¶TJ ID = 250 µA, Referenced to 25Ċ 0.07 V/ Ċ VDS = 60 V, VGS = 0 V µA Drain-Source Leakage Current I DSS VDS = 48 V, TC = 125Ċ 1 µA Gate-Source Leakage Current V GS = 20V, VDS = 0 V 100 nA Gate-Source Leakage Reverse IGSS VGS = -20V, VDS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) V GS = 10 V, ID = 25 A 18 23 m Ω Dynamic Characteristics Input Capacitance C ISS 900 1220 pF Output Capacitance C OSS 430 550 pF Reverse Transfer Capacitance C RSS VGS = 0 V, VDS = 25 V f = 1MHz 80 100 pF Dynamic Characteristics Turn-On Delay Time t D(ON) 40 60 ns Rise Time t R 100 200 ns Turn-Off Delay Time t D(OFF) 90 180 ns Fall Time t F VDD = 30V, ID =25 A, RG = 50Ω (Note 4, 5) 80 160 ns Total Gate Charge Q G 30 40 nC Gate-Source Charge Q GS 9.6 nC Gate-Drain Charge (Miller Charge) Q GD VDS = 48V, VGS = 10 V ID = 50A, (Note 4, 5) 10 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw QW-R502-088,A „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Source-Drain Diode Ratings and Characteristics Diode Forward Voltage V SD I S = 50A, VGS = 0 V 1.5 V Continuous Source Current I S 50 Pulsed Source Current I SM Integral Reverse p-n Junction Diode in the MOSFET G S D 200 A Reverse Recovery Time t RR 54 ns Reverse Recovery Charge Q RR IS = 50A, VGS = 0 V dIF / dt = 100 A/µs 81 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=5.6mH, IAS=50A, VDD=25V, RG=0Ω, Starting TJ=25Ċ 3. ISD≤50A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25Ċ 4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2% 5. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw QW-R502-088,A „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv /dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit Fig. 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw QW-R502-088,A „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD VDS 90% 10% VGS tD(ON ) tR tD(OFF ) tFPulse Width≤ 1DŽs Duty Factor≤0.1 % Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kȤ 0.3DŽF DUT VDS Same Type as D.U.T. 10V0.2DŽF 12V Charge QGS QGD QG VGS 1mA VG F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RG 10V VDS L VDD tp IAS tp Time BVDSS Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw QW-R502-088,A „ TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain -Source Voltage , VDS (V) Drain Current, ID (A) On-State Characteristics 102 101 100 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 468 1 035 79 Note: 1. VDS=50V 2. 250µs Pulse Test 150¥ 25¥ 4.5V VGS Top: 15V 10 V 8 V 7 V 6 V 5 .5V Bottorm : 4.5V 0.0 Drain-Source On-Resistance, RDS(ON) (mȤ) Drain Current , ID (A) 40 80 200 100 140 0.5 1.0 1.5 2.0 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage 102 101 100 0.2 Source-Drain Voltage , VSD (V) Reverse Drain Current, ISD (A) On State Current vs. Allowable Case Temperature VGS=20V *Note: 1. VGS=0V 2. 250µs Test 25¥ 150¥ VGS=10V 2000 Drain -Source Voltage, VDC (V) Capacitance (pF) Capacitance Characteristics (Non-Repetitive ) 1500 500 1000 10 20 COSS Gate-to-Source Voltage, VGS (V) Total Gate Charge , QG (nC) 5 15 3020 25 Gate Charge Characteristics 15 25 30 35 2500

3000 CISS=CGS+CGD (CDS=shorted)

COSS=CDS+CGD CRSS=CGD *Note: 1. V GS=0V 2. f = 1MHz CRSS CISS 35 40 45 *Note: ID=50A VDS=30V VDS=48V

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw QW-R502-088,A „ TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS(Normalized) Junction Temperature , TJ (¥) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, RDS(ON), (Normalized) -50 50 100 150 3.0 On-Resistance Variation vs . Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature , TJ (¥) *Note: 1. VGS=10V 2. ID=25A 101 100 10-1 Drain-Source Voltage , VDS (V) Drain Current , ID,(A) Maximum Safe Operating 101 103 Drain Current, ID (A) Case Temperature, TC (¥) 75 100 150 Maximum Drain Current vs . Case Temperature 1255025 100 101 102 Operation in This Area by RDS (on) *Note: 1. Tc=25¥ 2. TJ=150¥ 3. Single Pulse 100µs 1ms 10ms 10ms 102 10-2 Square Wave Pulse Duration , t1 (sec) Thermal Response, ZȬJC (t) 100 10-5 100 10-1 10-4 10-3 10-2 10-1 101 Single pulse 0.01 Transient Thermal Response Curve *Note: 1. ZȬJC (t ) = 1 .42¥/W Max. 2. Duty Factor , D=t1/t2 3. TJ -TC=PDM×ZȬJC (t) 0.02 0.05 0.1 0.2 D=0.5

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw QW-R502-088,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.