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UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-A83.a

50 Amps, 60 Volts

 DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances.  FEATURES * RDS(ON) < 23mΩ@VGS = 10 V * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability  SYMBOL 1.Gate 3.Source 2.Drain  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 50N06L-TN3-R 50N06G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source  MARKING INFORMATION PACKAGE MARKING TO-252

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current TC = 25°C ID 50 A TC = 100°C 35 A Pulsed Drain Current (Note 2) I DM 200 A Avalanche Energy Single Pulsed (Note 3) E AS 480 mJ Repetitive (Note 2) E AR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns Power Dissipation (TC=25°C) P D 46 W Junction Temperature T J +150 °C Operation and Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by TJ 3. L=0.38mH, IAS=50A, VDD= 25V, RG=20Ω, Starting TJ=25°C 4. ISD ≤50A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C  THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 100 °C/W Junction to Case θJC 2.7 °C/W

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current I DSS V DS = 60 V, VGS = 0 V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse V GS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID = 250 μA, Referenced to 25°C 0.07 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 25 A 18 23 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS = 0 V, VDS = 25 V f = 1MHz 900 1220 pF Output Capacitance C OSS 430 550 pF Reverse Transfer Capacitance C RSS 80 100 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 30V, ID =0.5 A, RG = 25Ω (Note 1, 2) 60 80 ns Turn-On Rise Time t R 180 220 ns Turn-Off Delay Time t D(OFF) 300 350 ns Turn-Off Fall Time t F 200 250 ns Total Gate Charge Q G VDS = 50V, VGS = 10 V ID = 1.3A (Note 1, 2) 60 80 nC Gate-Source Charge Q GS 9 nC Gate-Drain Charge Q GD 20 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD I S = 50A, VGS = 0 V 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS 50 A Maximum Pulsed Drain-Source Diode Forward Current ISM 200 A Reverse Recovery Time t RR IS = 50A, VGS = 0 V dIF / dt = 100 A/μs 54 ns Reverse Recovery Charge Q RR 81 μC Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RG 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) 102 101 100 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current, ISD (A) On State Current vs. Allowable Case Temperature *Note: 1. VGS=0V 2. 250µs Test 25°C 150°C Drain to Source On- Resistance,RDS(ON) (mΩ) Drain Current, ID (A) 0 30 50 60 120 On-Resistance Variation vs. Drain Current and Gate Voltage 20 40 70 80 90 100 140160 VGS=10V VGS=20V

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a  TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BVDSS(Normalized) Junction Temperature, TJ (°C) -50 50 200 *Note: 1. VGS=0V 2. ID=250µA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, RDS(ON), (Normalized) -50 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, TJ (°C) *Note: 1. VGS=10V 2. ID=25A 101 100 10-1 Drain-Source Voltage, VDS (V) Drain Current , ID,(A) Maximum Safe Operating 10-1 103 Drain Current, ID (A) Case Temperature, TC (°C) 75 100 150 Maximum Drain Current vs. Case Temperature 1255025 100 101 102 Operation in This Area by RDS (on) *Note: 1. T c=25°C 2. TJ=150°C 3. Single Pulse 100µs 1ms 10ms 10ms 102 Thermal Response, ZθJC (t)

50N06-F Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - A 8 3 . a UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.