50N05E

MTM50N05 MOTOROLA | Alldatasheet

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MOTOROLA SC (XSTRS/P F) b8E D MM 6367254 0098613 650 MEMOTL MOTOROLA m= SEMICONDUCTOR TECHNICAL DATA F , Designer’s Data Sheet MTMSONOSE Power Field Effect Transistors $$ N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs |

50 AMPERES

R = 0.028 OHM This advanced “E” series of TMOS power MOSFETs is designed to withstand high DS(on} , . ee . 50 VOLTS energy in the avalanche and commutation modes. These new energy efficient devices also offer drain-to-source diodes with fast recovery times. Designed for low voltage, — high speed switching applications in power supplies, converters and PWM motor con- trols, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against 0 unexpected voltage transients. © Internal Source-to-Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High | _ Energy in the Avalanche Mode — Unclamped : Inductive Switching (UIS) Energy Capability Specified G at 100°C. © Commutating Safe Operating Area (CSOA) Specified for 5 Use in Half and Full Bridge Circuits ® ® Source-to-Drain Diode Recovery Time Comparable to a TMOS Discrete Fast Recovery Diode ® Diode is Characterized for Use in Bridge Circuits @ DC Equivalent to IRFZ40 MAXIMUM RATINGS (T) = 25°C unless othermise noted) we Drain-Source Voltage l Drain-Gate Voltage (Rg = 1 MA) Gate-Source Voltage — Continuous Ves +20 Vde MTMS50NO5E — Non-repetitive (tp S$ 50 x8)} Vas 240 Vpk CASE 197A-03 Drain Current — Continuous (Tc = 25°C) Ade | TO204AE — Pulsed Total Power Dissipation @ Tc = 25°C 125 Watts Derate above 25°C 1 wre [ Operating and Storage Temperature Range | Ty Tag | eswoiso |e] THERMAL CHARACTERISTICS Thermal Resistance ” “cw Junction to Case Rec 1.0 Junction to Ambient Rea 30 Maximum Lead Temperature for Soldering Th 300 °c Purposes, 1/8” from case for 5 seconds MOTOROLA TMOS POWER MOSFET DATA 3-219

MOTOROLA SC (XSTRS/R F) bBE D MM 6367254 0098614 59? MEMOTE MTM50NO5E ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted) OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (gg = 0, Ip = 0.25 mA) Zero Gate Voltage Drain Current uA (Vps = Rated Voss, Vas = 0) 10 (ps = 0.8 Rated Voss. Vos = 9. Ty = 125°C) 80 Gate-Body Leakage Current, Forward (V@gr = 20 Vdc, Vpg = 0) [100 | nAde | Gate-Body Leakage Current, Reverse (Vggp = 20 Vdc, Vpg = 0) iessr_ | — | 100 ON CHARACTERISTICS* Gate Threshold Voltage Vesith) Vde (ps = Vas: Ip = 250 nA) 2 4 Ty = 100°C 18 35 Static Drain-Source On-Resistance (Vgg = 10 Vdc, Ip = 25 Adc} = 0.028 Drain-Source On-Voltage (Vgg = 10 V) Vosion) Ve (ip = 50 Adc) - 14 (ip = 25 Ade, Ty = 100°C) - 13 Forward Transconductance (Vpg = 15 V, Ip = 25 A) 7 | — | mhos | DRAIN-TO-SOURCE AVALANCHE CHARACTERISTICS Unclamped Inductive Switching Energy See Figures 14 and 15 | Wosr md (ip = 160 A, Vpp = 25 V, Tc = 25°C, Single Pulse, Non-repetitive} | ;o= 55 lip = 50, Vpp = 25 V, Tc = 25°C, PW. < 36 us, Duty Cycle = 1%) - 100 lip = 20A, Vpp = 25 V, Tc = 100°C, PW. = 35 ys, Duty Cycle < 1%) - 35 DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Ty — 100°C) [Rise Time | OO NIT hme Rise Time gon = 7 ohne) tr | 60 | Turn-Off Deley Time See Figure 9 tdloff) 7 =| ‘SOURCE DRAIN DIODE CHARACTERISTICS* Forward Turn-On Time dig/dt = 100 Alus) | ton | __Limited by stray inductance INTERNAL PACKAGE INDUCTANCE (TO-204) Internal Drain Inductance lg 5 (Typ) (Measured from the contact screw on the header closer to the source pin and the center of the die} Internal Source Inductance ls 125 (Typ) (Measured from the source pin, 0.25" from the package to the source bond pad) “Pulse Test Pulse Width < 300 us, Duty Cycle < 2% MOTOROLA TMOS POWER MOSFET DATA 3-220

Figure 1. On-Region Characteristics Figure 2, Gate-Threshold Voltage Variation

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Figure 3. Transfer Characteristics Figure 4. Breakdown Voltage Variation

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Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation

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Figure 7. Maximum Rated Forward Biased Figure 8. Maximum Rated Switching

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Figure 10. Thermal Response

MOTOROLA SC (XSTRS/R F) BAR D MM 6367254 0098617? 2Tbh MMOTL MTMS50NO5E , COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Fig- BY ure 12 defines the limits of safe operation for commutated Yes . source-drain current versus re-applied drain voltage 0 when the source-drain diode has undergone forward ‘rt _ bias. The curve shows the limitations of Ir and peak 90% — ; Vps for a given rate of change of source current. It is \\s applicable when waveforms similar to those of Figure 11 wm Let are present. Full or half-bridge PWM DC motor controllers = are common applications requiring CSOA data. on IRM ¥ " Device stresses increase with increasing rate of change 025 IRM, of source current so dls/dt is specified with a maximum ng value. Higher values of dlg/dt require an appropriate de- Vos rating of IFM, peak Vpg or both. Ultimately dlg/dt is lim- Sto i ¥ ited primarily by device, package, and circuit imped- f° i ances. Maximum device stress occurs during try as the NVogidt é diode goes from conduction to reverse blocking vos oo Vpsipk) is the peak drain-to-source voltage that the y Ver fe * device must sustain during commutation; IF is the max- Y a imum forward source-drain diode current just prior to the > Fax c508 onset of commutation. STRESS AREA Vp is specified at 80% of VipR)DSs to ensure that the Figure 11. c | CSOA stress is maximized as Ig decays from IRM to zero. igure 11. Commutating Waveforms Rgg should be minimized during commutation. Ty has only a second order effect on CSOA. Stray inductances in Motorola’s test circuit are Res © our assumed to be practical minimums. dVpg/dt in excess of 10 Vins was attained with dlg/dt of 400 A/us. mo © 10 - od Ppiftt Ty yt tye | ‘ wet +1 tts [| \\ L

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Zmwt.ttt Ppp Tt tr + Vos Fe a pope ot 3 ics pee S oe | t+ + Vp — 80% OF RATED Vpg erg a a OO Vgsu = Vi + ly digtt en A Figure 13. Commutating Safe Operating Area »_LT TTP? tt ti) Test Circuit 0 10 Ey EF 40 50 60 Figure 12, Commutating Safe Operating Area (CSOA) Vasith oo \\ 3 “ \\ Vps © c low 2 \\ DS oO | oa, \\ T°; | 4700 wt y fo 0 (250 V “vo \\ () “ \\ Yoo x \\ (J) . : t rn O's 4 —— | 1, (TIME) (v fy wosn = (3102) (—afunss ad Inductive Switen fsa = (7b ) (wat ~ Yoo Figure 14, Unclamped inductive Switching “chi Tort Circuit Figure 15. Unclamped Inductive Switching Waveforms MOTOROLA TMOS POWER MOSFET DATA 3-223