50MT060WH IRF | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Optimized for Welding, UPS and SMPS

Applications

  • Operating Frequencies > 20 kHz Hard Switching,>200 kHz Resonant Mode
  • Low EMI, requires Less Snubbing
  • Direct Mounting to Heatsink
  • PCB Solderable Terminals
  • Very Low Junction-to-Case Thermal Resistance Benefits MMTP www.irf.com

I27120 rev. D 02/03 2 www.irf.com R0 (1) Resistance 30 k Ω T0 = 25°C β (1) (2) Sensitivity index of the thermistor 4000 K T 0 = 25°C material T 1 = 85°C V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 500µA VCE(on) Collector-to-Emitter Voltage 2.3 3.15 V GE = 15V, I C = 50A 2.5 3.2 V GE = 15V, I C = 100A 1.72 2.17 V GE = 15V, I C = 50A, T J = 150°C VGE(th) Gate Threshold Voltage 3 6 I C = 0.5mA ICES Collector-to-Emiter Leaking 0.4 mA V GE = 0V, V CE = 600V Current 10 V GE = 0V, V CE = 600V, T J = 150°C VFM Diode Forward Voltage Drop 1.58 1.80 V I F = 50A, V GE = 0V 1.49 1.68 I F = 50A, V GE = 0V, T J = 150°C 1.9 2.17 I F = 100A, V GE = 0V, T J = 25°C IGES Gate-to-Emitter Leakage Current ± 250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Total Gate Charge (turn-on) 331 385 nC I C = 52A Qge Gate-Emitter Charge (turn-on) 44 52 V CC = 400V Qgc Gate-Collector Charge (turn-on) 133 176 V GE = 15V Eon Turn-On Switching Loss 0.26 mJ Internal gate resistors (see Electrical Diagram) Eoff Turn-Off Switching Loss 1.2 IC = 50A, VCC = 480V, VGE = 15V, L = 200µH Ets Total Switching Loss 1.46 Energy losses include tail and diode reverse recovery Eon Turn-On Switching Loss 0.73 mJ Internal gate resistors (see Electrical diagram) Eoff Turn-Off Switching Loss 1.66 IC = 50A, VCC = 480V, VGE = 15V, L = 200µH Ets Total Switching Loss 2.39 Energy losses include tail and diode reverse recovery, TJ = 150°C Cies Input Capacitance 7100 pF V GE = 0V Coes Output Capacitance 510 V CC = 30V Cres Reverse Transfer Capacitance 140 f = 1.0 MHz trr Diode Reverse Recovery Time 82 97 ns V CC = 200V, IC = 50A Irr Diode Peak Reverse Current 8.3 10.6 A di/dt = 200A/µs Qrr Diode Recovery Charge 340 514 nC trr Diode Reverse Recovery Time 137 153 ns V CC = 200V, IC = 50A Irr Diode Peak Reverse Current 12.7 14.8 A di/dt = 200A/µs Qrr Diode Recovery Charge 870 1132 nC T J = 125°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Thermistor Specifications Parameters Min Typ Max Units Test Conditions (2) = exp [ β ( )]1 (1) T0,T1 are thermistor's temperatures 1 T

I27120 rev. D 02/03 50MT060WH www.irf.com Thermal- Mechanical Specifications TJ Operating Junction IGBT, Diode - 40 150 °C Temperature Range Thermistor - 40 125 TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT 0.38 °C/ W Diode 0.8 RthCS Case-to-Sink Module 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance (3) (external shortest distance in air 5.5 mm between two terminals) Creepage (3) (shortest distance along the external 8 surface of the insulating material between 2 terminals) T Mounting torque to heatsink (4) 3 ± 10% Nm Wt Weight 66 g Parameters Min Typ Max Units (3) Standard version only i.e. without optional thermistor (4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads Fig. 1 - Typical Output Characteristics IC, Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 2 - Maximum Collector Current vs. Case Temperature Maximum DC Collector Current (A) TC, Case Temperature (°C) 100 120 25 50 75 100 125 150 100 0.1 1 10 Vge = 15V 20µs Pulse Width T = 150˚CJ T = 25˚CJ

I27120 rev. D 02/03 4 www.irf.com Fig. 3 - Typical Collector-to-Emitter Voltage vs. Junction Temperature VCE, Collector-to-Emitter Voltage (V) TJ, Junction Temperature (°C) Fig. 4 - Typical Gate Charge vs. Gate-to- Emitter Voltage VGE, Gate-to-Emitter Voltage (V) QG, Total Gate Charge (nC) Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Instantaneous Forward Current - I F (A) Forward Voltage Drop - VFM (V) 1.5 2.5 20 40 60 80 100 120 140 160 I = 100AC I = 50AC I = 20AC 0 100 200 300 400 Vcc = 400V Ic = 52A 100 T = 150˚C T = 125˚C T = 25˚C J J J

I27120 rev. D 02/03 50MT060WH www.irf.com t rr (ns) dif /dt - (A/µs) Fig. 6 - Typical Reverse Recovery vs. di f/dt I RRM (A) dif /dt - (A/µs) Fig. 7 - Typical Reverse Recovery Current vs. di f/dt 100 120 140 160 100 1000 Vr = 200V I = 50A, Tj = 125˚C I = 50A, Tj = 25˚C F F Q RR (nC) dif /dt - (A/µs) Fig. 8 - Typical Stored Charge vs. di f/dt 500 1000 1500 2000 100 1000 Vr = 200V I = 50A, Tj = 125˚C I = 50A, Tj = 25˚C F F 100 100 1000 Vr = 200V I = 50A, Tj = 125˚C I = 50A, Tj = 25˚C F F

I27120 rev. D 02/03 6 www.irf.com Outline Table Note: unused terminals are not assembled in the package Dimensions in millimetres Resistance in ohms Electrical DHiagram Functional Diagram Electrical Diagram

I27120 rev. D 02/03 50MT060WH www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.

50 MT 060 W H -

Ordering Information Table 1 - Current rating (50 = 50A) 2 - Essential Part Number 3 - Voltage code (060 = 600V) 4 - Speed/ Type (W = Warp IGBT) 5 - Circuit Configuration (H = Half Bridge) 6 - Special Option Empty = no special option T = Thermistor