50MT060ULS IRF | Alldatasheet

Document overview

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Technical content

Features

  • Optimized for Welding, UPS and SMPS

Applications

  • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode
  • Low EMI, requires Less Snubbing
  • Direct Mounting to Heatsink
  • PCB Solderable Terminals
  • Very Low Junction-to-Case Thermal Resistance Benefits www.irf.com MMTP

I27123 rev. C 02/03 2 www.irf.com Qg Total Gate Charge (turn-on) 370 555 nC I C = 100A Qge Gate-Emitter Charge (turn-on) 64 96 V CC = 480V Qgc Gate-Collector Charge (turn-on) 163 245 V GE = 15V Eon Turn-On Switching Loss 0.7 1.2 mJ I C = 50A, VCC = 480V, VGE = 15V, Eoff Turn-Off Switching Loss 1.7 2.6 R g = 5Ω Ets Total Switching Loss 2.4 3.8 Eon Turn-On Switching Loss 1.1 1.7 mJ I C = 50A, VCC = 480V, VGE = 15V Eoff Turn-Off Switching Loss 2.5 3.8 R g = 5Ω, TJ = 125°C Ets Total Switching Loss 3.6 5.5 Energy losses include tail and diode reverse recovery Cies Input Capacitance 9800 14700 V GE = 0V Coes Output Capacitance 602 903 pF V CC = 30V Cres Reverse Transfer Capacitance 121 182 f = 1.0 MHz Ct Diode Junction Capacitance 118 177 V r = 600V, f = 1.0 MHz trr Diode Reverse Recovery Time 99 150 ns V CC = 480V, IC = 50A Irr Diode Peak Reverse Current 6.5 9.8 A di/dt = 200A/µs Qrr Diode Recovery Charge 320 735 nC R g = 5Ω di(rec)M/dt Diode PeakRate of Fall of Recovery 236 A/µs During t b V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA VCE(on) Collector-to-Emitter Voltage 1.69 2.31 V GE = 15V, I C = 50A 1.96 2.55 V GE = 15V, I C = 100A 1.88 2.24 V GE = 15V, I C = 100A, T J = 150°C VGE(th) Gate Threshold Voltage 3 6 I C = 0.5mA BVR Diode Reverse Breakdown Voltage 600 I R = 200µA ∆ VGE(th) / Temperature Coeff. of - 13 mV/°C V CE = V GE, IC = 500µA ∆ TJ Threshold Voltage gfe Forward Transconductance 22 29 S V CE = 50V, I C = 100A ICES Collector-to-Emiter Leaking Current 0.25 mA V GE = 0V, V CE = 600V 6V GE = 0V, V CE = 600V, T J = 150°C VFM Diode Forward Voltage Drop 1.64 1.82 V I F = 100A, V GE = 0V 1.56 1.74 I F = 100A, V GE = 0V, T J = 150°C IGES Gate-to-Emitter Leakage Current ± 250 nA V GE = ± 20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Energy losses include tail and diode reverse recovery

I27123 rev. C 02/03 50MT060ULS www.irf.com Thermal- Mechanical Specifications TJ Operating Junction Temperature Range - 40 150 °C TSTG Storage Temperature Range - 40 125 RthJC Junction-to-Case IGBT 0.18 0.28 °C/ W Diode 0.4 0.6 RthCS Case-to-Sink Module 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) T Mounting torque to heatsink (3) 3 ± 10% Nm Wt Weight 66 g Parameters Min Typ Max Units R0 (1) Resistance 30 k Ω T0 = 25°C β (1) (2) Sensitivity index of the thermistor 4000 K T 0 = 25°C material T 1 = 85°C Thermistor Specifications (50MT060ULST only) Parameters Min Typ Max Units Test Conditions (2) = exp [ β ( )], Temperatures in kelvin1 (1) T0,T1 are thermistor's temperatures 1 T 0.1 1 10 100 f , Frequency ( kHz ) 100 Load Current ( A ) Duty cycle : 50% Tj = 125°C Tsink = 90°C Power Dissipation = 92W Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) (3) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads

I27123 rev. C 02/03 4 www.irf.com Fig. 3 - Typical Transfer Characteristics 25 50 75 100 125 150 TC Case Temperature (°C) 100 120 IC Maximum DC Collector Current (A) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) 1.25 1.5 1.75 VCE , Collector-to Emitter Voltage (V) IC = 100A IC = 50A IC = 25A 5.0 5.5 6.0 6.5 VGE, Gate-to-Emitter Voltage (V) 1.0 10.0 100.0 1000.0 IC, Collector-to-Emitter Current TJ = 25°C TJ = 150°C VCC = 50V 20µs PULSE WIDTH 100 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A ) TJ = 25C TJ = 150C Vge = 15V 380µs Pulse Width

I27123 rev. C 02/03 50MT060ULS www.irf.com Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1E-006 1E-005 0. 0001 0. 001 0. 01 0. 1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0. 01 0. 1 Thermal Response ( Z thJC 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPO NSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.200 0.000993 0.296 0.038934 0.102 0.52648 τJ τJ τ τC Ci= i/Ri Ci= τi/Ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 1E-005 0.0001 0.001 0.01 0.1 Thermal Response ( Z thJC 0.20 0.10 D = 0.50 0.02 0.01 0.05 SING LE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.060 0.000968 0.130 0.019621 0.100 0.051755 τJ τJ τ τC Ci= i/Ri Ci= τi/Ri

I27123 rev. C 02/03 6 www.irf.com Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0 100 200 300 400 QG, Total Gate Charge (nC) 0.0 4.0 8.0 12.0 16.0 20.0 VGE , Gate-to-Emitter Voltage (V) IC= 100A VCE = 480V Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature 0 10 20 30 RG, Gate Resistance ( Ω ) 0.0 1.0 2.0 3.0 4.0 5.0 Switching Losses (mJ) VCC = 480V VGE = 15V TJ = 25°C I C = 100A EOFF EON 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 2000 4000 6000 8000 10000 12000 14000 C, Capacitance (pF) Coes Cres Cies VGE = 0V, f = 1 MHZ Cies = C ge +C gc, CceSHORTED Cres = Cgc Coes = Cce + Cgc -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 0.1 100 Total Switching Losses (mJ) RG = 5.0Ω VGE = 15V VCC = 480V IC = 100A IC = 50A IC = 25A

I27123 rev. C 02/03 50MT060ULS www.irf.com Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 1 10 100 1000 VCE, Collector-to-Emitter Voltage (V) 100 1000 IC, Collector-to-Emitter Current (A) VGE = 20V TJ = 125° SAFE OPERATING AREA Forward Voltage Drop - V F ( V ) 100 Instantaneous Forward Current - I F ( A ) TJ = 150°C TJ = 125°C TJ = 25°C 20 40 60 80 100 IC, Collector Current (A) Total Switching Losses (mJ) RG = 5.0Ω TJ = 125°C VGE = 15V VCC = 480V

I27123 rev. C 02/03 8 www.irf.com Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt 100 200 300 400 500 600 dif / dt - (A / µs ) IRRM - (A) VR = 480V TJ = 125°C TJ = 25 °C IF = 100A IF = 50A IF = 25A 100 200 300 400 500 600 dif / dt - (A / µs) 400 800 1200 1600 2000 Q rr - (nC) VR = 480V TJ = 125°C TJ = 25°C IF = 100A IF = 50A IF = 25A 100 200 300 400 500 600 dif / dt - (A / µs) 100 1000 10000 di(rec)M/dt - (A/µs) VR = 480V TJ = 125°C TJ = 25°C IF = 100A IF = 50A IF = 25A 100 200 300 400 500 600 dif / dt - (A / µs) 120 160 200 240 280 320 trr - (ns) VR = 480V TJ = 125°C TJ = 25°C IF = 100A IF = 50A IF = 25A

I27123 rev. C 02/03 50MT060ULS www.irf.com Outline Table Note: unused terminals are not assembled in the package Dimensions in millimetres Circuit Diagram Resistance in ohms

I27123 rev. C 02/03 10 www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 10/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.

50 MT 060 U LS -

Ordering Information Table 1 - Current rating (50 = 50A) 2 - Essential Part Number 3 - Voltage code (060= 600V) 4 - Speed/ Type (U = Ultra Fast IGBT) 5 - Circuit Configuration (LS = Low Side Chopper) 6 - Special Option Empty = no special option T = Thermistor