50MT045_V01 SY | Alldatasheet

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Technical content

Bypass Diode Module For PV REVERSE VOLTAGE: 45 VOLTS FORWARD CURRENT:50.0 AMPERE

FEATURES

  • Metal of silicon rectifier, majority carrier conduction
  • Guard ring for transient protection
  • Low power loss, high efficiency
  • High current capability, low IR
  • High surge capacity
  • High temperature reverse characteristic is excellent
  • For use in photovoltaic solar cell protection MECHANICAL DATA Case: Molded plastic, MT09E Epoxy: UL 94V-O rate flame retardant Polarity: As marked Mounting position: Any Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60H Z , resistive or inductive load. For capacitive load, derate current by 20%. Symbols 50MT045 Units Maximum Recurrent Peak Reverse Voltage V RRM

45 Volts

31.5 Volts

Maximum DC Blocking Voltage V DC Maximum Average Forward Rectified Current I (AV)

50.0 Amp

See Fig.1 Peak Forward Surge Current, I FSM 400 Amp8.3ms single half-sine-wave superimposed on rated load (JEDEC method) Maximum Forward at I F = 50A, T C = 25°C V F 0.55 Volts Voltage (Note 1) at I F = 50A, T C =125°C 0.47 Maximum Reverse Current at T J =25℃ I R mAmp at Rated DC Blocking Voltage T J =100℃ Typical Thermal Resistance R θJC ℃/W Operating Junction Temperature Range T OP -55 to +150 Junction Temperature in DC Forward Current Without Reverse Bias. T ≤ 1 hour (Note 3) T J Storage Temperature Range Tstg -55 to +150 ℃ NOTES: 1- 300us Pulse Width, 2%Duty Cycle. 2- Thermal Resistance Junction to Case. Without Heatsink. 3- Meets The Requiements Of IEC 61215 ed. 2 Bypass Diode Thermal Test. -55 to +200

RATINGS AND CHARACTERISTIC CURVES Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics 100 1000 10000 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) CASE TEMPERATURE (°C) Fig.5 Maximum Non-Repetitive Forward Surge Current 0.001 0.01 0.1 100 1000 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=75°C 0.1 100 1000 Pulse width 300μs 1% duty cycle TJ=125°C TJ=25 C 120 160 200 240 280 320 360 400 440 480 1 10 100 8.3ms single half sine wave INSTANTANEOUS REVERSE CURRENT (mA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) 0.001 0.01 0.1 Pulse width TJ=25°C TJ =125°C FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz PEAK FORWARD SURGE CURRENT (A) Bypass Diode Module For PV 50MT045 Bypass Diode Module For PV

Bypass Diode Module For PV 50MT045 Bypass Diode Module For PV MIN MAX MIN MAX A 22.90 23.10 0.902 0.909 B 9.10 10.10 0.358 0.398 C 11.40 11.60 0.449 0.457 D 26.90 27.10 1.059 1.067 E 41.90 42.10 1.650 1.657 F 8.40 8.60 0.331 0.339 G 14.90 15.10 0.587 0.594 H 16.90 17.10 0.665 0.673 I 2.49 2.51 0.098 0.099 J 2.49 2.51 0.098 0.099 K 3.50 4.50 0.138 0.177 L 5.50 6.20 0.217 0.244 M 5.93 6.10 0.233 0.240 N 4.40 4.60 0.173 0.181 O 6.80 7.40 0.268 0.291 P 4.40 5.20 0.173 0.205 Q 0.67 0.73 0.026 0.029 mm inch NOTEDIM OUTLINE DIMENSIONS