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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • High Collector Current Capability
  • Low Collector to Emitter Saturation Voltage (Resistance): RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]
  • Low ON-Resistance (Ron)
  • Pb-Free, Halogen Free and RoHS compliance Typical Applications
  • Low-Frequency Amplifier
  • High Speed Switching
  • Small Motor Drive
  • Muting Circuit SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Collector to Base Voltage V CBO −50 V Collector to Emitter Voltage V CEO −50 V Emitter to Base Voltage V EBO −5V Collector Current I C −500 mA Collector Current (Pulse) I CP −1.0 A Collector Dissipation (Note 2) PC 700 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note 2 : Surface mounted on ceramic substrate(600mm × 0.8mm) ELECTRICAL CONNECTION MARKING

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet. 1:B a s e 2 : Emitter 3 : Collector AX LOT No.CPH3

www.onsemi.com ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 3) Parameter Symbol Conditions Value Unit min typ max Collector Cutoff Current I CBO V CB=−40V, IE=0A −100 nA Emitter Cutoff Current I EBO V EB=−4V, IC=0A −100 nA DC Current Gain h FE V CE=−2V, IC=−10mA 200 500 Gain-Bandwidth Product f T V CE=−10V, IC=−50mA 690 MHz Output Capacitance Cob V CB=−10V, f=1MHz 3.8 pF Collector to Emitter Saturation Voltage VCE(sat) I C=−100mA, IB=−10mA −60 −120 mV Base to Emitter Saturation Voltage V BE(sat) I C=−100mA, IB=−10mA −0.9 −1.2 V Collector to Base Breakdown Voltage V(BR)CBO I C=−10μA, IE=0A −50 V Collector to Emitter Breakdown Voltage V(BR)CEO I C=−1mA, RBE=∞ −50 V Emitter to Base Breakdown Voltage V (BR)EBO I E=−10μA, IC=0A −5 V Turn-On Time t on See specified Test Circuit 30 ns Storage Time t stg 170 ns Fall Time tf 30 ns Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit

www.onsemi.com

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www.onsemi.com ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A lis ting of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended tosupport or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject t oa l l applicable copyright laws and is not for resale in any manner. CPH3 CASE 318BA ISSUE O PACKAGE DIMENSIONS unit : mm Device Marking Package Shipping (Qty / Packing) 50A02CH-TL-E AX CPH3 (Pb-Free) 3,000 / Tape & Reel 50A02CH-TL-H CPH3 (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Recommended Soldering Footprint 1 : Base 2 : Emitter 3 : Collector 0.6 2.4 0.95 0.95 1.4