MRF6VP2600H FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large- -Signal Impedance Parameters
  • CW Operation Capability with Adequate Cooling
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push- -Pull Operation
  • Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

Select Documentation/Application Notes - - AN1955. Figure 1. Pin Connections

42 RFoutB/VDSB

© Freescale Semiconductor, Inc., 2008- -2010.All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted) OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @±4M H zO f f s e t .

  1. Each side of device measured separately.
  2. Measurement made with device in push- -pull configuration.

Figure 2. MRF6VP2600HR6 Test Circuit Schematic Table 5. MRF6VP2600HR6 Test Circuit Component Designations and Values

Figure 3. MRF6VP2600HR6 TestCircuit Component Layout

225 MHz

Figure 14. Single- -Carrier DVB- -T OFDM

64 QAM Data Carrier Modulation

5 Symbols

7.61 MHz

Figure 15. 8K Mode DVB- -T OFDM Spectrum Figure 16. Single- -Carrier DVB- -T OFDM Power Pout, OUTPUT POWER (WATTS) AVG. Figure 17. Single- -Carrier DVB- -T OFDM ACPR Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Single- -Carrier DVB- -T OFDM ACPR Power Pout, OUTPUT POWER (WATTS) AVG.

64 QAM Data Carrier Modulation, 5 Symbols

Figure 19. MTTF versus Junction Temperature - - CW is operated at VDD =5 0V d c ,Pout = 125 W Avg., andηD = 28.5%.

gate to gate, balanced configuration. drain to drain, balanced configuration. Figure 20. Series Equivalent Source and Load Impedance

Figure 21. MRF6VP2600HR6 Test Circuit Component Layout — 88- -108 MHz Table 6. MRF6VP2600HR6 Test Circuit Component Designations and Values — 88- -108 MHz

Figure 22. Broadband CW Power Gain and Drain Figure 23. CW Power Gain and Drain Efficiency

108 MHz

88 MHz

98 MHz

gate to gate, balanced configuration. drain to drain, balanced configuration. Figure 24. Series Equivalent Source and Load Impedance — 88- -108 MHz

Figure 25. MRF6VP2600HR6 Test Circuit Component Layout — 352.2 MHz

352.2 MHz

Table 7. MRF6VP2600HR6 Test Circuit Component Designations and Values — 352.2 MHz

Figure 26. CW Power Gain and Drain Efficiency

gate to gate, balanced configuration. drain to drain, balanced configuration. Figure 27. Series Equivalent Source and Load Impedance — 352.2 MHz

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2008 • Initial Release of Data Sheet 1 July 2008 • Removed Capable of Handling 5:1 VSWR bullet, p. 1 plotted data in Fig. 21, Series Equivalent Source and Load Impedance, p. 9 2 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain- -Source Voltage and Fig. 5, DC Safe Operating Area to de- note that each side of device is measured separately, p. 5

  • Updated Fig. 5, DC Safe Operating Area, to show one side of the device, p. 5
  • Figs. 21 and 27, Series EquivalentSource and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from gate to gate,balanced configuration”, p. 9, 14 2.1 Nov. 2008 • Corrected Figs. 21 and 27 Revision History Zload copy to read ”Test circuit impedance as measured from drain to drain, balanced configuration”, p. 9, 14 4 May 2009 • Updated bullets in Features section to reflect consistent listingacross products, p. 1
  • Added thermal data for 352.2 MHz application to Table 2, Thermal Characteristics, p. 1
  • Added Typical Performances table for 352.2 MHz application, p. 2
  • Added Fig. 28, Test Circuit Component Layout - - 352.2 MHzand Table 7, Test Circuit Component Designations and Values - - 352.2 MHz, p. 15
  • Added Fig. 29, CW Power Gain and Drain Efficiency versus Output Power - - 352.2 MHz p. 16
  • Added Fig. 30, Series Equivalent Source and Load Impedance - - 352.2 MHz, p. 17 4.1 June 2009 • Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26- -RH”, Table 5, Test Circuit Component Designations and Values and Table 6, Test Circuit Component Designations and Values — 88- -108 MHz, p. 3, 11
  • Added Electromigration MTTF Calculator and RF HighPower Model availability to Product Documentation, Tools and Software, p. 20 5 May 2010 • Changed 10- -500 MHz to 2- -500 MHz in Device Description box, p. 1
  • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
  • Added thermal data for 88- -108 MHz application to Thermal Characteristics table, p. 1
  • Added Typical Performance table for 88- -108 MHz application, p. 2
  • Removed Fig. 20, MTTF versus Junction Temperature - - Pulsed and renumbered accordingly, p. 8
  • Replaced Fig. 22 Test Circuit Component Layout, Table 6. Test Circuit Component Designations and Values, the Typical Characteristic curves and Fig. 27 Series Impedance for 88- -108 MHz with improved circuit performance figures. The 88- -108 MHz application circuit is also now a more compact size., p. 10- -12 5.1 July 2010 • Fig. 24, Series Impedance for 88- -108 MHz, table andplot updated to reflect correct location of Zsource and Zload,p .1 2

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