1N5719 HP | Alldatasheet

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Features

  • Low Harmonic Distortion
  • Large Dynamic Range
  • Low Series Resistance
  • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modulators, electrically tuned filters, analog phase shifters, and RF limiters. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) CATHODE DIMENSIONS IN MILLIMETERS AND (INCHES). 4.32 (.170) 3.81 (.150) Outline 15 Maximum Ratings Junction Operating and (Derate linearly to zero at 150 °C)

The Agilent Outline 15 package has a glass hermetic seal with dumet leads. The lead finish is 95- 5 tin-lead (SnPb) for all PIN diodes. The leads on the Outline 15 package should be restricted so that the bend starts at least 1/ 16 inch (1.6 mm) from the glass body. Typical package inductance and capacitance are 2.5 nH and 0.13 pF, respectively. Marking is by digital coding with a cathode band. General Purpose Diodes Electrical Specifications at T A = 25°C Maximum Minimum Maximum Part Total Breakdown Residual Series Effective Carrier Reverse Recovery Number Capacitance Voltage Resistance Lifetime Time 5082- C T (pF) V BR (V) R S (Ω ) τ (ns) t rr (ns) General Purpose Switching and Attenuating 3001 0.25 200 1.0 100 (min.) 100 (typ.) 3039 0.25 150 1.25 100 (min.) 100 (typ.) 1N5719 0.3** 150 1.25 100 (min.) 100 (typ.) 3077 0.3 200 1.5 100 (min.) 100 (typ) Band Switching Test V R = 50 V V R = VBR IF =100 mA I F = 50 mA I F = 20 mA Conditions *V R = 20 V Measure *I F = 20 mA I R = 250 mA V R = 10 V VR = 100 V I R ≤ 10 µA I F = 10 mA *I F = 10 mA 90% Recovery f = 1 MHz f = 100 MHz *I R = 6 mA Notes: Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W. RF Current Controlled Resistor Diodes Electrical Specifications at TA = 25°C Max. Max. High Low Difference Effective Min. Residual Max. Resistance Resistance in Carrier Breakdown Series Total Limit, R H (W) Limit, R L (W) Resistance Part Lifetime Voltage Resistance Capacitance vs. Bias Number t (ns) V BR (V) R S (Ω )C T (pF) Min. Max. Min. Max. Slope, Dc 5082-3080 1300 (typ.) 100 2.5 0.4 1000 8** 1N5767* 1300 (typ.) 100 2.5 0.4 1000 8 5082-3379 1300 (typ.) 50 0.4 8 5082-3081 2500 (typ.) 100 3.5 0.4 1500 8 Test I F = 50 mA V R = VBR,I F = 100 mA V R = 50 V I F = 0.01 mA I F = 1.0 mA Batch Conditions I R = 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz I F = 20 mA Matched at IR ≤ 10 µA f = 100 MHz I F = 0.01 mA and 1.0 mA f = 100 MHz *The 1N5767 has the additional specifications: τ = 1.0 msec minimum I R = 1 µA maximum at VR = 50 V V F = 1 V maximum at I F = 100 mA.

www.semiconductor.agilent.com Data subject to change. Copyright © 2000 Agilent Technologies Obsoletes 5967-5812E 5968-7182E (1/00) Diode Package Marking 1N5xxx 5082-xxxx would be marked: 1Nx xx xxx xx YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part number. Y is the last digit of the calendar year. WW is the work week of manufacture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: 1N5 30 712 80 945 945