1N5711 HP | Alldatasheet

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Technical content

Features

  • Low Turn-On Voltage As Low as 0.34 V at 1 mA
  • Pico Second Switching Speed
  • High Breakdown Voltage Up to 70 V
  • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace. The 5082-2300 Series and 5082-2900 devices are unpas- sivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers. 1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900 0.41 (.016) 0.36 (.014) 25.4 (1.00) MIN. 25.4 (1.00) MIN. 1.93 (.076) 1.73 (.068) CATHODE DIMENSIONS IN MILLIMETERS AND (INCHES). 4.32 (.170) 3.81 (.150) Outline 15 Maximum Ratings Junction Operating and Storage Temperature Range DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temperature BR

Typical Package Inductance Typical Package Capacitance The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body. Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D. Electrical Specifications at TA = 25°C General Purpose Diodes Breakdown Forward at Forward Reverse Leakage Capaci- Part Package Voltage Voltage Current Current tance Number Outline V BR (V) V F (mV) I F (mA) I R (nA) at VR (V) C T (pF) 5082-2800 15 70 410 15 200 50 2.0 1N5711 15 70 410 15 200 50 2.0 5082-2810 15 20 410 35 100 15 1.2 1N5712 15 20 550 35 150 16 1.2 5082-2811 15 15 410 20 100 8 1.2 5082-2835 15 8* 340 10* 100 1 1.0 Test I R = 10 µAI F = 1 mA *V F = 0.45 V V R = 0 V Conditions *I R = 100 µA f =1.0 MHz Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is measured at 20 mA.

Low 1/f (Flicker) Noise Diodes Part Breakdown Forward at Forward Reverse Leakage Capaci- Number Package Voltage Voltage Current Current tance 5082- Outline V BR (V) V F (mV) I F (mA) I R (nA) at VR (V) C T (pF) 2303 15 20 400 35 500 15 1.0 2900 15 10 400 20 100 5 1.2 Test I R = 10 µAI F = 1 mA V R = 0 V Conditions f =1.0 MHz Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA. Matched Pairs and Quads Basic Matched Matched Part Number Pair Quad Batch 5082- Unconnected Unconnected Matched [1] Test Conditions 2900 ΔVF at IF = 1.0, 10 mA 2800 5082-2804 5082-2805 ΔVF at IF = 0.5, 5 mA ΔVF = 20 mV ΔVF = 20 mV *I F = 10 mA ΔCO at f = 1.0 MHz 2811 5082-2826 ΔVF at IF = 10 mA ΔVF = 10 mV ΔCO at f = 1.0 MHz ΔCO = 0.1 pF 2835 5082-2080 ΔVF at IF =10 mA ΔVF = 10 mV ΔCO at f = 1.0 MHz ΔCO = 0.1 pF Note: 1. Batch matched devices have a minimum batch size of 50 devices. SPICE Parameters Parameter Units 5082-2800 5082-2810 5082-2811 5082-2835 5082-2303 5082-2900 BV V 75 25 18 9 25 10 IBV A 10E - 5 10E - 5 10E -5 10E - 5 10E - 5 10E - 5 RS Ω 25 10 10 5 10 15 PT 2222 22

Figure 1. I-V Curve Showing Typical Series and 5082-2900 Schottky Diodes. Figure 2. 5082-2300 Series Typical Figure 3. 5082-2300 Series and 5082-2900 Typical Dynamic Resistance (RD) vs. Figure 4. 5082-2300 and 5082-2900 Figure 5. I-V Curve Showing Typical Figure 6. (5082-2800 OR 1N5711) Figure 7. (5082-2800 or 1N5711) Figure 8. I-V Curve Showing Typical 2810 or 1N5712 Schottky Diode.

0.01 IF - FORWARD CURRENT (mA)

Figure 9. (5082-2810 or IN5712)

Figure 10. I-V Curve Showing Typical Figure 11. (5082-2811) Typical Variation Voltage (VR) at Various Temperatures. Figure 12. I-V Curve Showing Typical Figure 13. (5082-2835) Typical Variation Voltage (VR) at Various Temperatures. Figure 14. Typical Capacitance (CT) vs. Figure 15. Typical Dynamic Resistance (RD) vs. Forward Current (IF).

www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 5968-4304E 5968-7181E (11/99) Diode Package Marking 1N5xxx 5082-xxxx would be marked: 1Nx xx xxx xx YWW YWW where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part number. Y is the last digit of the calendar year. WW is the work week of manufacture. Examples of diodes manufactured during workweek 45 of 1999: 1N5712 5082-3080 would be marked: 1N5 30 712 80 945 945