5076 NPC | Alldatasheet
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SEIKO NPC CORPORATION —1 VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using minia- ture crystal units for which a wide pulling range is difficult to provide. They employ a recently developed vari- cap diode fabrication process that provides a wide frequency pulling range and good linearity without any external components. Also, they employ a regulated voltage drive oscillator circuit that significantly reduces current consumption, crystal current, and oscillation characteristics supply voltage dependency. The 5076 series are ideal for miniature, wide pulling range, low power consumption, VCXO modules.
FEATURES
I VCXO with recently developed varicap diode built-in I New fabrication process that significantly reduces parasitic capacitance and provides wide pulling range even when using miniature crystal units I Regulated voltage drive oscillator circuit for reduced power consumption, crystal drive current, and oscillation characteristics voltage dependency I Wide frequency pulling range 160ppm (B1 version, f = 27MHz) (Crystal: γ = 300, C0 = 1.5pF) I Operating supply voltage range: 1.6V to 2.0V I Oscillation frequency range (for fundamental oscil- lation): 20MHz to 55MHz (varies with version) I Low current consumption: 0.5mA (B1 version, f = 27MHz, no load, V DD = 1.8V) I Frequency divider built-in
- Selectable by version: f O , f O /2, f O /4, f O /8, f O /16
- Frequency divider output for 1.3MHz (min) low frequency output I VC pin input resistance: 10M Ω (min) I CMOS output I Two types of pad layout selectable by mounting method version: for Flip Chip Bonding version: for Wire Bonding I Chip form (CF5076
APPLICATIONS
I 2.5 2.0mm, 3.2 2.5mm size miniature VCXO modules for digital mobile TV tuner, digital TV (PDP, LCD), PND (Personal Navigation Device), etc.
ORDERING INFORMATION
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4 Wafer form
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4 Chip form
SEIKO NPC CORPORATION —2 SERIES CONFIGURATION VERSION NAME Operating supply voltage range [V] PAD layout Recommended operating frequency range [MHz] *1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authenticati on. However, the oscil- lation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. Output frequency and version name *2. Versions in parentheses ( ) are under development. f O output f O /2 output f O /4 output f O /8 output f O /16 output 1.6 to 2.0 Flip Chip Bonding 20 to 40 (5076A1) (5076A2) (5076A3) (5076A4) (5076A5) 40 to 55 (5076AJ) (5076AK) (5076AL) (5076AM) (5076AN) Wire Bonding 20 to 40 5076B1 (5076B2) (5076B3) (5076B4) (5076B5) 40 to 55 5076BJ (5076BK) (5076BL) (5076BM) (5076BN) Device Package Version name WF5076 –4 Wafer form CF5076 –4 Chip form WF5076 −4 Form WF: Wafer form CF: Chip (Die) form Oscillation frequency range, frequency divider function Pad layout type A: for Flip Chip Bonding B: for Wire Bonding
SEIKO NPC CORPORATION —3 PAD LAYOUT (Unit: µ PAD DIMENSIONS PIN DESCRIPTION BLOCK DIAGRAM I 5076A (for Flip Chip Bonding) I 5076B (for Wire Bonding) Chip size: 0.84 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm 90µm Chip base: V SS level Chip size: 0.84 0.69mm Chip thickness: 130µm ± 15µm PAD size: 90µm 90µm Chip base: V SS level Pad No. Pad dimensions [µm] Pad No. Pin I/O Description X Y 5076A 5076B 1 –189 –240 1 2 XT I Crystal connection pin (amplifier input) 2 189 –240 2 1 XTN O Crystal connection pin (amplifier output) 3 315 –21 3 6 VDD – (+) supply pin 4 315 225 4 5 Q O Clock output pin 5 –315 225 5 4 VSS – ( ) supply pin 6 –315 –21 6 3 VC I Oscillation frequency control voltage input pin (positive polarity) (frequency increases with increasing voltage) XT XTN VDD Q VC VSS X Y (420, 345) (−420, −345) (0,0) XTN XT VC VSS VDD Q X Y (420, 345) (−420, −345) (0,0) N VSS Oscillation Detector Q Voltage Regulator RVC1 XT VDD XTN VC CVC2 Rf RVC2 CVC1 COUT RD CIN Level Shifter CMOS ouput Buffer*1
SEIKO NPC CORPORATION —4 ABSOLUTE MAXIMUM RATINGS V SS = 0V RECOMMENDED OPERATING CONDITIONS V SS = 0V Parameter Symbol Conditions Rating Unit Supply voltage range V DD Between VDD and VSS 0.5 to 7.0 V Input voltage range V IN Input pins 0.5 to V DD + 0.5 V Output voltage range V OUT Output pins 0.5 to V DD + 0.5 V Storage temperature range T STG Wafer form, chip form 65 to +150 C Output current I OUT Q pin 20 mA Parameter Symbol Conditions Rating Unit Min Typ Max Operating supply voltage V DD C LOUT 15pF 1.6 – 2.0 V Input voltage V IN Input pins V SS DD V Operating temperature T OPR –40 – +85 C Oscillation frequency *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditio ns, so the oscillation characteristics of components must be carefully evaluated. f O 5076 1 to 5076 5 2 0–4 0 M H z 5076 J to 5076 N 4 0–5 5 M H z Output frequency f OUT C LOUT 15pF 5076 1 to 5076 5 1.25 – 40 MHz 5076 J to 5076 N 2.5 – 55 MHz
SEIKO NPC CORPORATION —5
ELECTRICAL CHARACTERISTICS
V DD = 1.6 to 2.0V , V C = 0.5V DD , V SS = 0V , Ta = –40 to +85 C unless otherwise noted. Parameter Symbol Conditions Rating Unit Min Typ Max Current consumption I DD 5076 1 (f O ), Measurement circuit 1, no load, f O = 27MHz, f OUT = 27MHz, V DD 5076 2 (f O /2), Measurement circuit 1, no load, f O = 27MHz, f OUT = 13.5MHz, V DD 5076 3 (f O /4), Measurement circuit 1, no load, f O = 27MHz, f OUT = 6.75MHz, V DD 5076 4 (f O /8), Measurement circuit 1, no load, f O = 27MHz, f OUT = 3.38MHz, V DD 5076 5 (f O /16), Measurement circuit 1, no load, f O = 27MHz, f OUT = 1.69MHz, V DD HIGH-level output voltage V OH Q pin, Measurement circuit 2, IOH = –2.0mA V DD – 0.4 – – V LOW-level output voltage V OL Q pin, Measurement circuit 2, IOL = 2.0mA – – 0.4 V Oscillator block built-in resistance RVC1 Measurement circuit 3 210 420 840 k Ω RVC2 210 420 840 k Ω Oscillator block built-in capacitance CVC1 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. V VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF CVC2 VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF VC input resistance R VIN Measurement circuit 4, Ta = 25°C1 0 – – M Ω VC input impedance Z VIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 530 – k Ω VC input capacitance C VIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) –3 1–p F Modulation characteristics*1 *1. The modulation characteristics may vary with the crystal used. fm Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 27MHz – 100 – kHz
SEIKO NPC CORPORATION —6 5076×J to 5076×N VDD = 1.6 to 2.0V , VC = 0.5VDD, VSS = 0V , Ta = –40 to +85°C unless otherwise noted. Parameter Symbol Conditions Rating Unit Min Typ Max Current consumption I DD 5076×J (fO), Measurement circuit 1, no load, fO = 48MHz, fOUT = 48MHz, VDD = 1.8V – 0.9 1.8 mA 5076×K (fO/2), Measurement circuit 1, no load, fO = 48MHz, fOUT = 24MHz, VDD = 1.8V – 0.6 1.2 mA 5076×L (fO/4), Measurement circuit 1, no load, fO = 48MHz, fOUT = 12MHz, VDD = 1.8V – 0.5 1.0 mA 5076×M (fO/8), Measurement circuit 1, no load, fO = 48MHz, fOUT = 6MHz, VDD = 1.8V – 0.4 0.8 mA 5076×N (fO/16), Measurement circuit 1, no load, fO = 48MHz, fOUT = 3MHz, VDD = 1.8V – 0.4 0.8 mA HIGH-level output voltage V OH Q pin, Measurement circuit 2, IOH = –2.0mA V DD – 0.4 – – V LOW-level output voltage V OL Q pin, Measurement circuit 2, IOL = 2.0mA – – 0.4 V Oscillator block built-in resistance RVC1 Measurement circuit 3 210 420 840 k Ω RVC2 210 420 840 k Ω Oscillator block built-in capacitance CVC1 Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. V VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF CVC2 VC = 0.2V – 4.7 – pF VC = 0.9V – 2.9 – pF VC = 1.6V – 1.7 – pF VC input resistance R VIN Measurement circuit 4, Ta = 25°C1 0 – – M Ω VC input impedance Z VIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) – 530 – k Ω VC input capacitance C VIN Measurement circuit 5, VC = 0V, f = 10kHz, Ta = 25°C (a monitor pattern on a wafer is tested) –3 1–p F Modulation characteristics*1 *1. The modulation characteristics may vary with the crystal used. fm Measurement circuit 6, –3dB frequency, VDD = 1.8V, VC = 1.8Vp-p, Ta = 25°C, fO = 48MHz –3 5– k H z
SEIKO NPC CORPORATION —7 SWITCHING CHARACTERISTICS VDD = 1.6 to 2.0V , VC = 0.5VDD, VSS = 0V , Ta = –40 to +85°C unless otherwise noted. Switching Time Measurement Waveform Parameter Symbol Conditions Rating Unit Min Typ Max Output rise time t r Measurement circuit 7, 0.2VDD → 0.8VDD, CLOUT = 15pF – 3.1 6.0 ns Output fall time t f Measurement circuit 7, 0.8VDD → 0.2VDD, CLOUT = 15pF – 3.1 6.0 ns Output duty cycle Duty Measurement circuit 7, Ta = 25°C, CLOUT = 15pF , VDD = 1.8V 45 50 55 % 0.8VDD Q DUTY measurement voltage (0.5VDD)TW tr tf T 0.2VDD 0.8VDD 0.2VDD DUTY= TW/ T 100 (%)
SEIKO NPC CORPORATION —8 MEASUREMENT CIRCUITS Measurement Circuit 1 Measurement parameter: IDD Measurement Circuit 2 Measurement parameter: VOH, VOL Measurement Circuit 3 Measurement parameter: RVC1, RVC2 Measurement Circuit 4 Measurement parameter: RVIN Measurement Circuit 5 Measurement parameter: CVIN, ZVIN Measurement Circuit 6 Measurement parameter: fm Measurement Circuit 7 Measurement parameter: Duty, tr , tf XT input signal: 1Vp-p, sine wave VDD VSS XT Q Crystal XTN A VC 0.1µF IDD Signal Generator 50Ω 0.001µF VOH VOL V 50Ω 0.1µFV S VOH VS ∆VVOL VS 0.1µF VDD VSS XT QXTN VC VS adjusted such that ∆V = 50 × IOH. VS adjusted such that ∆V = 50 × IOL. VDD VSS A VC IXT XT XTN RVC1 = VDD IXT VDD VSS A VC IXTN XT XTN RVC2 = VDD IXTN VC input signal: 100Hz to 10kHz, 0.1Vp-p C1 = 33µF , R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p VDD VSS A VC IVIN XT XTN RVIN = VDD IVIN VDD VSS XT QXTN VCImpedance Analyzer (HP 4194A) R1C1 CLOUT = 15pF 0.1µF VDD VSS XT QXTN VC Gain-phase Analyzer (HP 4194A) Modulaiton Analyzer (HP 8901B) Crystal Demodulation signal Modulation signal VDD VSS XT Q Crystal XTN VC 0.1µF CLOUT = 15pF (Including probe capacitance)
SEIKO NPC CORPORATION —9 FUNCTIONAL DESCRIPTION Oscillation Start-up Detector Function The devices also feature an oscillation start-up detector circuit. This circuit functions to disable the outputs until the oscillation starts. This prevents unstable oscillator output at oscillator start-up when power is applied. TYPICAL PERFORMANCE (5076B1) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement I Crystal parameters Frequency Pulling Range Pulling Sensitivity Measurement circuit Parameter f O = 27MHz C0 [pF] 1.5 γ (= C0/C1) 300 R1C1 VDD = 1.8V, fOUT = 27MHz, Ta = R.T. VC [V] −50 −100 −150 −200 −250 100 150 200 250 Pulling range [ppm] VDD = 1.8V, fOUT = 27MHz, Ta = R.T. 100 150 200 250 Sensitivity [ppm/V] VC [V] VDD VSS XT Q Crystal XTN VC 0.1µF CLOUT = 15pF (Including probe capacitance)
SEIKO NPC CORPORATION —10 Current Consumption Measurement circuit Frequency Stability by Supply Voltage Change M easurement circuit Drive Level Measurement circuit fOUT = 27MHz, Ta = R.T. VDD [V] IDD [mA] CLOUT = 15pF CLOUT = No load VC = 0V VC = 0.5VDD VC = VDD VC = 0V VC = 0.5VDD VC = VDD VDD VSS XT Q Crystal XTN A VC 0.1µF IDD fOUT = 27MHz, ± 0ppm at VDD = 1.8V VDD [V] −3.0 −2.0 −1.0 0.0 1.0 2.0 3.0 VC = 0V VC = 1.8V VC = 0.9V ∆f/f [ppm] VDD VSS XT Q Crystal XTN VC 0.1µF CLOUT = 15pF (Including probe capacitance) VDD = 1.8V, fOUT = 27MHz, Ta = R.T. 30Drive level [µW] VC [V] DL = (IX’tal)2 × Re DL: drive level I X’tal: current flowing to crystal (RMS value) Re: crystal effective resistance VDD VSS XT Q Crystal XTN VC 0.1µF CLOUT = 15pF Tektronix CT-6 Current Probe IX'tal
SEIKO NPC CORPORATION —11 Negative Resistance Measurement circuit Note. "C0" value is set, concerning the actual crystal characteristics connected between XT and XTN. The data is measured with Agilent 4396B using NPC’s original measurement jig. The values may vary with measurement jig and conditions. Phase Noise Measurement circuit VDD = 1.8V, C0 = 2pF , Ta = R.T. Frequency [MHz] 15 20 25 30 35 40 45 −200 −400 −600 −800 Negative resistance [Ω] VC = 0V VC = 0.9V VC = 1.8V VDD VSS XT QXTN VC 0.1µFC0 = 2pFNetwork Analyzer (Agilent 4396B) S-Parameter Test Set (Agilent 85046A) VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Offset Frequency [Hz] 10 100 1,000 10,000 100,000 1,000,000 10,000,000 Phase noise [dBc/Hz] −60 −80 −100 −120 −140 −160 VC = 1.8V VC = 0.9V VC = 0V CLOUT = 15pF 0.1µF VDD VSS XT QXTN VC Signal Source Analyzer (Agilent E5052A) Crystal 0.01µF 200Ω
SEIKO NPC CORPORATION —12 Modulation Characteristics Measurement circuit Output Waveform Measurement equipment: Oscilloscope; DSO80604B (Agilent) Measurement circuit VDD = 1.8V, fOUT = 27MHz, Ta = R.T. Frequency [kHz] 10 100 100010 fm [dB] −12 C1 = 33µF , R1 = R2 = 1MΩ VC modulation signal: 100Hz to 100kHz, 0 to VDDp-p R1C1 CLOUT = 15pF 0.1µF VDD VSS XT QXTN VC Gain-phase Analyzer (HP 4194A) Modulaiton Analyzer (HP 8901B) Crystal Demodulation signal Modulation signal VDD = 1.8V, fOUT = 27MHz, VC = 0.5VDD, CLOUT = 15pF , Ta = R.T. VDD VSS XT Q Crystal XTN VC 0.1µF CLOUT = 15pF (Including probe capacitance)
SEIKO NPC CORPORATION —13 NC0811AE 2009.02 Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further te sting or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any ent ity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are req uested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales @npc.co.jp