5059H NPC | Alldatasheet
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Technical content
32kHz output Crystal Oscillator Module ICs S E I K O N P C C O R P O R A T I O N - 1 OVERVIEW The 5059H series are 32.768kHz output and 125°C operation crystal oscillator module ICs with divide-by-512 (or divide-by-1024) frequency, AT-cut crystal 16.777216MHz (or 33.554432MHz) oscillator circuit built-in. It is possible to generate a 32.768kHz output crystal oscillator with excellent temperature characteristics by using AT-cut crystal. There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
▪ Wide range of operating supply voltage: 1.6 to 5.5V ▪ Oscillation capacitors CG,CD built-in ▪ Oscillation frequency(fundamental oscillator):16.777216MHz or 33.554432MHz ▪ Standby function ▪ Output frequency: 32.768kHz (oscillation frequency divided by 512 or 1024) High impedance in standby mode, oscillator stops ▪ -40 to +125°C operating temperature range ▪ Power-saving pull-up resistor built-in ▪ Regulated voltage drive oscillator circuit for reduced power consumption ▪ ±1mA output drive capability (Ta=-40 to +85°C) and crystal drive current ±0.8mA output drive capability (Ta=-40 to +125°C) ▪ 3 pad layout options for mounting ▪ 50±5% output duty (1/2VDD) 5059HAx : for Flip Chip Bonding ▪ Wafer form (WF5059Hxx) 5059HBx : for Wire Bonding(Type I) ▪ Chip form (CF5059Hxx) 5059HCx : for Wire Bonding(Type II)
APPLICATIONS
▪ 32.768kHz output crystal oscillator modules SERIES CONFIGURATION Oscillation capacitors*2[pF] Version*1 Oscillation frequency[MHz] （fundamental oscillator） CG C D Output frequency[kHz] PAD layout 5059HAA Flip Chip Bonding 5059HBA Wire Bonding TypeⅠ 5059HCA 16.777216 3 2 32.768 (fOSC/512) Wire Bonding TypeⅡ 5059HAB Flip Chip Bonding 5059HBB Wire Bonding TypeⅠ 5059HCB 33.554432 2 1 32.768 (fOSC/1024) Wire Bonding TypeⅡ *1. It becomes WF5059Hxx in case of the wafer form and CF5059Hxx in case of the chip form. *2. The oscillation capacitors do not contain parasitic capacitance.
ORDERING INFORMATION
Device Package Version Name WF5059Hxx-4 Wafer form CF5059Hxx-4 Chip form WF5059H□□-4 Oscillation frequency A:16.777216MHz PAD layout A:For Flip Chip Bonding B:F or Wire Bonding(Type I) C:For Wire Bonding(Type II) Fo rm WF:Wafer form CF:Chip(Die) form B:33.554432MHz
▪ WF5059HAx ▪ CF5059HBx ▪ CF5059HCx (For Flip Chip Bonding) (For Wire Bonding (Type I)) (For Wire Bonding (Type II)) 6 (0,0) XT XTN VDD QVSS INHN (375,345) (-375,-345) X Y Chip size: 0.75×0.69mm Chip thickness : 130m PAD size : 80m Chip base : Vss level 6 (0,0) XTXTN VDD QV S S INHN (375,345) (-375,-345) X Y Chip size: 0.75×0.69mm Chip thickness : 130m PAD size : 80m Chip base : Vss level 6 (0,0) XT XTN VDD Q VSSINHN (375,345) (-375,-345) X Y Chip size: 0.75×0.69mm Chip thickness : 130m PAD size : 80m Chip base : Vss level PAD COORDINATES PIN DESCRIPTION PAD coordinates[μm] PAD No. PAD No. X Y 5059HAx 5059HBx 5059HCx Pin Function 1 -146 -235 1 2 1 XT 2 146 -235 2 1 2 XTN Crystal connection pins. Crystal is connected between XT and XTN. 3 265 -41 3 6 5 VDD (+)supply voltage 4 265 186 4 5 4 Q Output(32.768kHz) 5 -265 186 5 4 3 VSS (-)ground 6 -265 -41 6 3 6 INHN Input pin controlled output state(oscillator stops when LOW),Power-saving pull-up resistor built-in BLOCK DIAGRAM VRG DIVIDER CMOS INHN XT XTN VSS VDD Q RF RD CG CD or
Vss=0V Parameter Symbol Condition Rating Unit Supply voltage range*1 V DD Between VDD and VSS -0.3 to +7.0 V Input voltage range*1*2 V IN Input pins -0.3 to VDD+0.3 V Output voltage range*1*2 V OUT Output pins -0.3 to VDD+0.3 V Output current*3 I OUT Q pin ±3 mA Junction temperature*3 T j 150 °C Storage temperature range*4 T STG Chip form, Wafer form -55 to +150 °C *1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded. Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions. * 2 . VDD is a VDD value of recommended operating conditions. *3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded. *4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials). Recommended Operating Conditions Vss=0V Rating Parameter Symbol Condition MIN TYP MAX Unit 5059HxA ver. 16.777216 Oscillator frequency fOSC VDD=1.6 to 5.5V 5059HxB ver. 33.554432 MHz Output frequency fOUT VDD=1.6 to 5.5V , CLOUT=15pF 32.768 kHz Operating supply voltage VDD Between VDD and VSS*1 1.6 5.5 V Input voltage VIN Input pins VSS VDD V Operating temperature Ta -40 +125 °C Output load capacitance CLOUT Q output 15 pF *1. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain stable operation of 5059H series. In addition, the wiring pattern between IC and capacitor should be as wide as possible. Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range.
Electrical Characteristics
VDD=1.6 to 5.5V , VSS=0V , Ta= -40 to +125°C unless otherwise noted. Rating Parameter Symbol Conditions MIN TYP MAX Unit Measurement circuit 3, IOH=-1mA, Ta=-40 to +85°C Q pin HIGH-level output voltage VOH Measurement circuit 3, IOH=-0.8mA, Ta=-40 to +125°C VDD-0.4 VDD V Measurement circuit 3, IOL=1mA, Ta=-40 to +85°C Q pin LOW-level output voltage V OL Measurement circuit 3, IOH=0.8mA, Ta=-40 to +125°C 0 0.4 V INHN pin HIGH-level input voltage V IH Measurement circuit 4 0.7VDD V INHN pin LOW-level input voltage V IL Measurement circuit 4 0.3VDD V Q=VDD 10 Q pin Output leakage current I Z Measurement circuit 5, INHN=“Low” Q=V SS -10 IDD1_5.0V V DD=5.0V 70 175 IDD1_3.3V V DD=3.3V 65 163 IDD1_2.5V V DD=2.5V 63 158 IDD1_1.8V Measurement circuit 1, INHN=“OPEN”, output load=15pF, f OSC=16.777216MHz, fOUT=32.768kHz, Ta=-40 to +125°C VDD=1.8V 60 150 IＤＤ２_5.0V V DD=5.0V 70 140 IＤＤ２_3.3V V DD=3.3V 65 130 IＤＤ２_2.5V V DD=2.5V 63 126 Current consumption (HxA ver. : divide-by-512 frequency output) I ＤＤ２_1.8V Measurement circuit 1, INHN=“OPEN”, output load=15pF, f OSC=16.777216MHz, fOUT=32.768kHz, Ta=-40 to +85°C VDD=1.8V 60 120 IDD3_5.0V V DD=5.0V 140 280 IDD3_3.3V V DD=3.3V 130 260 IDD3_2.5V V DD=2.5V 126 252 IDD3_1.8V Measurement circuit 1, INHN=“OPEN”, output load=15pF, f OSC=33.554432MHz, fOUT=32.768kHz, Ta=-40 to +125°C VDD=1.8V 120 240 IＤＤ4_5.0V V DD=5.0V 140 245 IＤＤ4_3.3V V DD=3.3V 130 228 IＤＤ4_2.5V V DD=2.5V 126 221 Current consumption (HxB ver. : divide-by-1024 frequency output) I ＤＤ4_1.8V Measurement circuit 1, INHN=“OPEN”, output load=15pF, f OSC=33.554432MHz, fOUT=32.768kHz, Ta=-40 to +85°C VDD=1.8V 120 210 Measurement circuit 1,INHN=“Low”,Ta=-40 to +85°C 10 Standby current IST Measurement circuit 1,INHN=“Low”,Ta=-40 to +125°C 20 RPU1 Measurement circuit 6 0.6 2 20 M INHN pin pull-up resistance R PU2 Measurement circuit 6 50 100 200 k Oscillator feedback resistance Rf 150 300 600 k CG 2.25 3.00 3.75 Oscillator capacitance (HxA ver. : divide-by-512 frequency output) C D Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 1.50 2.00 2.50 pF CG 1.50 2.00 2.50 Oscillator capacitance (HxB ver. : divide-by-1024 frequency output) C D Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 0.75 1.00 1.25 pF
Q output is stopped and becomes high impedance. INHN Q Oscillator HIGH(Open) f OUT Operating LOW Hi-Z Stopped Power Saving Pull-up Resistor The INHN pin pull-up resistance changes its value to RPU1 or RPU2 in response to the input level (HIGH or LOW). When INHN is tied to LOW level, the pull-up resistance becomes large (RPU1), thus reducing the current consumed by the resistance. When INHN is left open circuit or tied to HIGH level, the pull-up resistance becomes small (RPU2), thus internal circuit of INHN becomes HIGH level. Consequently, the IC is less susceptible to the effects of noise, helping to avoid problems such as the output stopping suddenly. Oscillation Detection Function The 5059H series have an oscillation detection circuit. The oscillation detection circuit disables the output until crystal oscillation becomes stable when oscillation circuit starts up. This function avoids the abnormal oscillation in the initial power up and in a reactivation by INHN.
Measurement Parameters : IDD, IST, DUTY , tr, tf VDD VSS Q SW1 CLOUT (Including probe capacitance) INHN XTN XT A X'tal0.1μF SW2 IDD,IST *AC characteristics observed on the Qpin using an oscilloscope. Parameter SW1 SW2 IDD ON OFF IST ON or OFF ON DUTY , tr, tf ON OFF MEASUREMENT CIRCUIT 2 Measurement Parameters : tOD VDD VSS Q RL1=1kΩ RL2=1kΩCLOUT (Including probe capacitance) 0.1μF INHN Function Generator 50Ω XTN XTX'tal Input Signal:VDD→VSS MEASUREMENT CIRCUIT 3 Measurement Parameters : VOH, VOL VDD VSS Q 2kΩ 0.1μF XTN Signal Generator XTN input signal:1Vp-p,sine wave 0.001μF 50Ω VVOH VOL 0.1μF VS ΔVQ VOH VS ΔVQ VOL VS VS adjusted so that ΔV=2k×IOH VS adjusted so that ΔV=2k×IOL
Measurement Parameters : VIH, VIL VDD VSS Q INHN XTN XTX'tal VIH:VSS→VDD voltage that changes output state VIL:VDD→VSS voltage that changes output state V 0.1μF VIH VIL MEASUREMENT CIRCUIT 5 Measurement Parameters : IZ VDD VSS Q INHN 0.1μF A IZ VDD or VSS MEASUREMENT CIRCUIT 6 Measurement Parameters : RPU1, RPU2 VDD VSSINHN VDD IPU VDDʵ0.7VDD IPU V 0.1μF VIN A IPU RPU1 = ˞VIN=0V RPU2 = ˞VIN=0.7VDD
The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used. C r y s t a l u s e d f o r m e a s u r e m e n t C r y s t a l p a r a m e t e r s Current Consumption 5059HxA I DD (fosc=16MHz, T a=25℃, CLOUT =15pF) 100 125 150 175 200 VDD [V] IDD [uA] 5059HxB I DD (fosc=32MHz, T a=25℃, CLOUT =15pF) 100 125 150 175 200 VDD [V] IDD [uA] Negative Resistance 5059HxA Negative Resistance (VDD=3.3V, C0=0 ～2pF, Ta=25 ℃) -2000 -1800 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 1 02 03 04 05 06 0 5059HxB Negative Resistance (VDD =3.3V, C0=0 ～2pF, T a=25℃) -2000 -1800 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 1 02 03 04 05 06 Frequency[MHz] Negative Resistance[ Ω] Parameter f 0=16MHz f 0=32MHz C0(pF) 1.1698 1.5927 R1(Ω) 16.824 13.476 L1 C1 R1 Fr equency[MHz] Negative Resistance[ Ω] C0=0pF C0=1pF C0=2pF C0=0pF C0=1pF C0=2pF The figures show the measurement result of the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. They were performed with Agilent 4396B using the NPC test jig. They may vary in a measurement jig, and measurement environment.
SEIKO NPC CORPORATION - 10 Frequency Deviation by Voltage 5059HxA Frequency deviation characteristics (fout=32kHz, V DD =3.3V std., T a=25℃, CLOUT =15pF) -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 V DD [V] Frequency deviation[ppm] 5059HxB Frequency deviation characteristics (fout=32kHz, VDD=3.3V std., Ta=25 ℃, CLOUT=15pF) -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 V DD [V] Frequency deviation[ppm] Drive Level 5059HxA Drive level (fosc=16MHz, T a=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V DD [V] Drive level[uW] 5059HxB Drive level (fosc=32MHz, Ta=25 ℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V DD [V] Drive level[uW] Output Waveform 5059HxA, V DD=3.3V , CLOUT=15pF, Ta=25°C 5059HxB, V DD=3.3V , CLOUT=15pF, Ta=25°C
SEIKO NPC CORPORATION - 11 Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment, transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email:sales@npc.co.jp ND12033-E-01 2013.02