5052H NPC | Alldatasheet
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Technical content
Crystal Oscillator Module ICs S E I K O N P C C O R P O R A T I O N - 1 OVERVIEW The 5052H series are miniature crystal oscillator module ICs supported 20MHz to 80 MHz fundamental oscillation mode and 125°C operation. The Oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal drive current, compared with existing devices, and significantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
▪ Wide range of operating supply voltage: 1.60 to 3.63V ▪ Multi-stage frequency divider for low-frequency ▪ Regulated voltage drive oscillator circuit for reduced output support: 1.25MHz (Hx1~Hx5 ver.) power consumption and crystal drive current 2.5MHz (HxP~HxT ver.) ▪ Optimized low crystal drive current oscillation for ▪ Frequency divider built-in m i n i a t u r e c r y s t a l u n i t s S e l e c t a b l e b y v e r s i o n : f OSC,fOSC/2,fOSC/4,fOSC/8,fOSC/16 ▪ 3 pad layout options for mounting ▪ Output drive capability: ±4mA 5052HAx: for Flip Chip Bonding ▪ -40 to 125°C operating temperature range 5052HBx: for Wire Bonding (Type I) ▪ Standby function 5052HCx: for Wire Bonding (Type II) High impedance in standby mode, oscillator stops ▪ Recommended oscillation frequency range ▪ CMOS output duty level (1/2VDD) (fundamental oscillator) :20 to 60MHz (Hx1~Hx5 ver.) ▪ 50±5% output duty 4 0 t o 8 0 M H z ( H x P ~ H x T v e r . ) ▪ 15pF output drive capability ▪ Wafer form (WF5052Hxx), Chip form (CF5052Hxx)
APPLICATIONS
Output frequency and version name*2 Operating supply voltage range[V] PAD layout Oscillation frequency range*1 [MHz] fOSC f OSC/2 f OSC/4 f OSC/8 f OSC/16 20 to 60 5052HA1 5052HA2 5052HA3 5052HA4 5052HA5 Flip Chip Bonding 40 to 80 5052HAP 5052HAQ 5052HAR 5052HAS 5052HAT 20 to 60 5052HB1 5052HB2 5052HB3 5052HB4 5052HB5 Wire Bonding Type I 40 to 80 5052HBP - - - - 20 to 60 5052HC1 5052HC2 5052HC3 5052HC4 5052HC5 1.60 to 3.63 Wire Bonding Type II 40 to 80 5052HCP - - - - *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. It becomes WF5052Hxx in case of the wafer form and CF5052Hxx in case of the chip form.
ORDERING INFORMATION
Device Package Version name WF5052Hxx-5 Wafer form CF5052Hxx-5 Chip form WF5052H□□-5 P AD layout A: for Flip Chip Bonding B: for Wire Bonding (Type I) C: for Wire Bonding (Type II) Frequency divider function/Oscillation frequency range Form WF : Wafer form CF : Chip(Die) form
▪ WF5052HAx ▪ CF5052HBx ▪ CF5052HCx (for Flip Chip Bonding) (for Wire Bonding (Type I)) (for Wire Bonding (Type II)) 1 2 (-300,-285) (300,285) XT XTN VDD Q VSS INHN X Y (0,0) Chip size : 0.60x0.57mm Chip thickness : 100μm PAD size : 80μm Chip base : VSS level 1 2 (-300,-285) (300,285) XTN XT INHN VSS Q VDD X Y (0,0) Chip size : 0.60x0.57mm Chip thickness : 100μm PAD size : 80μm Chip base : VSS level 1 2 (-300,-285) (300,285) XT XTN VSS Q VDD INHN X Y (0,0) Chip size : 0.60x0.57mm Chip thickness : 100μm PAD size : 80μm Chip base : VSS level
- Coordinates at the chip center are (0,0). PAD COORDINATES PIN DESCRIPTION PAD coordinate[μm] PAD No. PAD No. X Y 5052HAx 5052HBx 5052HCx Pin Function 1 -145.2 -193.5 1 2 1 XT 2 145.2 -193.5 2 1 2 XTN Crystal connection pins. Crystal is connected between XT and XTN. 3 208.5 -1.1 3 6 5 VDD (+)supply voltage 4 208.5 193.5 4 5 4 Q Output one of fOSC,fOSC/2,fOSC/4,fOSC/8,fOSC/16 5 -208.5 193.5 5 4 3 VSS (-)ground 6 -208.5 -1.1 6 3 6 INHN Input pin controlled output state(oscillator stops when LOW), Power-saving pull-up resistor built-in BLOCK DIAGRAM INHN XT XTN VDD Q CG C D RF RD VRG N N=1,2,4,8,16 VSS CMOS
V SS=0V Parameter Symbol Condition Rating Unit Supply voltage range*1 V DD Between VDD and VSS -0.3 to +4.0 V Input voltage range*1*2 V IN Input pins -0.3 to VDD+0.3 V Output voltage range*1*2 V OUT Output pins -0.3 to VDD+0.3 V Output current*3 I OUT Q pin ±20 mA Junction temperature*3 T j 150 °C Storage temperature range*4 T STG Chip form, Wafer form -65 to +150 °C *1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded. Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions. *2. VDD is a VDD value of recommended operating conditions. *3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded. *4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials). Recommended Operating Conditions V SS=0V Rating Parameter Symbol Condition MIN TYP MAX Unit 5052Hx1 ~ Hx5 ver. 20 60 Oscillator frequency*1 f OSC VDD=1.60 to 3.63V 5052HxP ~ HxT ver. 40 80 MHz 5052Hx1 ~ Hx5 ver. 1.25 60 Output frequency fOUT VDD=1.60 to 3.63V CLOUT≤15pF 5052HxP ~ HxTver. 2.5 80 MHz Operating supply voltage VDD Between VDD and VSS*2 1.60 3.63 V Input voltage VIN Input pins VSS VDD V Operating temperature Ta -40 +125 °C Output load capacitance CLOUT Q output 15 pF *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain stable operation of 5052H series. In addition, the wiring pattern between IC and capacitor should be as wide as possible. Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range.
Electrical Characteristics
DC Characteristics (Hx1~Hx5 version) VDD=1.60 to 3.63V , VSS=0V , Ta= -40 to +125°C unless otherwise noted. Parameter Symbol Condition MIN TYP MAX Unit Q pin HIGH-level output voltage VOH measurement circuit 3, IOH=-4mA V DD-0.4 V DD V Q pin LOW-level output voltage V OL measurement circuit 3, IOL=4mA 0 0.4 V INHN pin HIGH-level input voltage V IH measurement circuit 4 0.7VDD V INHN pin LOW-level input voltage V IL measurement circuit 4 0.3VDD V Q=VDD 10 Q pin Output leakage current I Z measurement circuit 5, INHN=“Low” Q=V SS -10 VDD=3.3V 1.4 2.8 VDD=2.5V 0.9 1.8 5052Hx1(fOSC), measurement circuit 1, no load, INHN=“OPEN”, f OSC=48MHz, fOUT=48MHz VDD=1.8V 0.7 1.4 mA VDD=3.3V 1.2 2.4 VDD=2.5V 0.8 1.6 5052Hx2(fOSC/2), measurement circuit 1, no load, INHN=”OPEN”, f OSC=48MHz, fOUT=24MHz VDD=1.8V 0.6 1.2 mA VDD=3.3V 1.0 2.0 VDD=2.5V 0.7 1.4 5052Hx3(fOSC/4), measurement circuit 1, no load, INHN=“OPEN”, f OSC=48MHz, fOUT=12MHz VDD=1.8V 0.5 1.0 mA VDD=3.3V 1.0 2.0 VDD=2.5V 0.6 1.2 5052Hx4(fOSC/8), measurement circuit 1, no load, INHN=“OPEN”, f OSC=48MHz, fOUT=6MHz VDD=1.8V 0.5 1.0 mA VDD=3.3V 0.9 1.8 VDD=2.5V 0.6 1.2 Current consumption*1 I DD 5052Hx5(fOSC/16),measurement circuit 1, no load, INHN=“OPEN”, f OSC=48MHz, fOUT=3MHz VDD=1.8V 0.4 0.8 mA Ta=-40 to +85°C 10 Standby current IST Measurement circuit 1 INHN=“Low” T a=-40 to +125°C 20 RPU1 Measurement circuit 6 0.8 3 24 M INHN pin pull-up resistance R PU2 Measurement circuit 6 30 70 150 k Oscillator feedback resistance Rf 50 100 200 k CG 4.0 5.0 6.0 Oscillator capacitance CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 6.4 8.0 9.6 pF *1. The consumption current IDD(CLOUT) with a load capacitance(CLOUT) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. I DD(CLOUT)[mA] = IDD[mA]+CLOUT[pF]×VDD[V]×fOUT[MHz]·10-3
DC Characteristics (HxP~HxT version) VDD=1.60 to 3.63V , VSS=0V , Ta= -40 to +125°C unless otherwise noted. Parameter Symbol Condition MIN TYP MAX Unit Q pin HIGH-level output voltage VOH measurement circuit 3, IOH=-4mA V DD-0.4 V DD V Q pin LOW-level output voltage V OL measurement circuit 3, IOL=4mA 0 0.4 V INHN pin HIGH-level input voltage V IH measurement circuit 4 0.7VDD V INHN pin LOW-level input voltage V IL measurement circuit 4 0.3VDD V Q=VDD 10 Q pin Output leakage current I Z measurement circuit 5, INHN=“Low” Q=V SS -10 VDD=3.3V 2.4 4.8 VDD=2.5V 1.7 3.4 5052HxP(fOSC), measurement circuit 1, no load, INHN=“OPEN”, f OSC=80MHz, fOUT=80MHz VDD=1.8V 1.3 2.6 mA VDD=3.3V 2.0 4.0 VDD=2.5V 1.3 2.6 5052HxQ(fOSC/2), measurement circuit 1, no load, INHN=”OPEN”, f OSC=80MHz, fOUT=40MHz VDD=1.8V 0.9 1.8 mA VDD=3.3V 1.7 3.4 VDD=2.5V 1.1 2.2 5052HxR(fOSC/4), measurement circuit 1, no load, INHN=“OPEN”, f OSC=80MHz, fOUT=20MHz VDD=1.8V 0.8 1.6 mA VDD=3.3V 1.5 3.0 VDD=2.5V 0.9 1.8 5052HxS(fOSC/8), measurement circuit 1, no load, INHN=“OPEN”, f OSC=80MHz, fOUT=10MHz VDD=1.8V 0.7 1.4 mA VDD=3.3V 1.4 2.8 VDD=2.5V 0.9 1.8 Current consumption*1 I DD 5052HxT(fOSC/16),measurement circuit 1, no load, INHN=“OPEN”, f OSC=80MHz, fOUT=5MHz VDD=1.8V 0.7 1.4 mA Ta=-40 to +85°C 10 Standby current IST Measurement circuit 1 INHN=“Low” T a=-40 to +125°C 20 RPU1 Measurement circuit 6 0.8 3 24 M INHN pin pull-up resistance R PU2 Measurement circuit 6 30 70 150 k Oscillator feedback resistance Rf 50 100 200 k CG 1.6 2.0 2.4 Oscillator capacitance CD Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 2.4 3.0 3.6 pF *1. The consumption current IDD(CLOUT) with a load capacitance(CLOUT) connected to the Q pin is given by the following equation, where IDD is the no-load consumption current and fOUT is the output frequency. IDD(CLOUT)[mA] = IDD[mA]+CLOUT[pF]×VDD[V]×fOUT[MHz]·10-3
AC Characteristics (Hx1~Hx5 version) V DD = 1.60 to 3.63V , VSS = 0V , Ta = -40 to +125°C unless otherwise noted Parameter Symbol Condition MIN TYP MAX Unit tr1 Measurement circuit 1, CLOUT=15pF, Q pin Output rise time tr2 Measurement circuit 1, CLOUT=15pF, ns tf1 Measurement circuit 1, CLOUT=15pF, Q pin Output fall time tf2 Measurement circuit 1, CLOUT=15pF, ns Q pin Output duty cycle DUTY Measurement circuit 1, T a=25°C, CLOUT=15pF, VDD=1.60 to 3.63V 45 50 55 % Q pin Output disable delay time t OD Measurement circuit 2, T a=25°C, CLOUT≤15pF 200 ns AC Characteristics (HxP~HxTversion) V DD = 1.60 to 3.63V , VSS = 0V , Ta = -40 to +125°C unless otherwise noted Parameter Symbol Condition MIN TYP MAX Unit tr1 Measurement circuit 1, CLOUT=15pF, Q pin Output rise time tr2 Measurement circuit 1, CLOUT=15pF, ns tf1 Measurement circuit 1, CLOUT=15pF, Q pin Output fall time tf2 Measurement circuit 1, CLOUT=15pF, ns Q pin Output duty cycle DUTY Measurement circuit 1, T a=25°C, CLOUT=15pF, VDD=1.60 to 3.63V 45 50 55 % Q pin Output disable delay time t OD Measurement circuit 2, T a=25°C, CLOUT≤15pF 200 ns
Q output is stopped and becomes high impedance. INHN Q Oscillator HIGH or Open fOUT Operating LOW Hi-Z Stopped Power Saving Pull-up Resistor The INHN pin pull-up resistance changes its value to RPU1 or RPU2 in response to the input level (HIGH or LOW). When INHN is tied to LOW level, the pull-up resistance becomes large (RPU1), thus reducing the current consumed by the resistance. When INHN is left open circuit or tied to HIGH level, the pull-up resistance becomes small (RPU2), thus internal circuit of INHN becomes HIGH level. Consequently, the IC is less susceptible to the effects of noise, helping to avoid problems such as the output stopping suddenly. Oscillation Detection Function The 5052H series have an oscillation detection circuit. The oscillation detection circuit disables the output until crystal oscillation becomes stable when oscillation circuit starts up. This function avoids the abnormal oscillation in the initial power up and in a reactivation by INHN.
Measurement Parameter : IDD, IST, DUTY tr, tf Parameter SW1 SW2 IDD OFF OFF IST ON or OFF ON DUTY , tr, tf ON OFF MEASUREMENT C IRCUIT 2 Measurement Parameter : tOD MEASUREMENT CIRCUIT 3 Measurement Parameter : VOH ,VOL (Including probe capacitance) X'tal XT INHN XTN Q VDD VSS A SW2 IDD,IST CLOUT SW1 0.1μF *AC characteristics observed on the Q pin using an oscilloscope. RL1=1kΩ RL2=1kΩ Q VDD VSS Signal Generator XTN 50Ω 0.001μF 0.1μF Function Generator 50Ω INHN CLOUT (Including probe capacitance) Input signal : 1Vp-p,sine wave ：Input signal VDD→VSS Q VDD VSS Signal Generator VVOH VOL XTN VS VS VOH ΔV VS VOL ΔV 50Ω 50Ω 0.001μF 0.1μF 0.1μF Q Q XTN input signal : 1Vp-p,sine wave VS adjusted so that ΔV=50×IOH VS adjusted so that ΔV=50×IOL
SEIKO NPC CORPORATION - 10 MEASUREMENT CIRCUIT 4 Measurement Parameter : VIH, VIL MEASUREMENT CIRCUIT 5 Measurement Parameter : IZ XT INHN XTN Q VDD VSS VIH, VIL X'tal V 0.1μF VIH: VSS→VDD voltage that changes output state VIL: VDD→VSS voltage that changes output state INHN Q VDD VSS A IZ VDD or VSS 0.1μF MEASUREMENT CIRCUIT 6 Measurement Parameter : RPU1, RPU2 INHN VDD VSS AV VIN IPU RPU1 = RPU2 = VDD IPU VDD 0.7VDD IPU (VIN = 0V) (VIN = 0.7VDD ) 0.1μF
SEIKO NPC CORPORATION - 11 REFERENCE DATA The following characteristics are measured using the crystal below. Note that the characteristics will vary with the crystal used. C r y s t a l u s e d f o r m e a s u r e m e n t C r y s t a l p a r a m e t e r s Parameter 40MHz 48MHz 80MHz C0(pF) 1.4 1.8 3.2 R1(Ω) 8 7 13 L1 C1 R1 Current Consumption 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V DD [V] IDD [mA] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V DD [V] IDD [mA] . 0 . 0 5052Hx1, fOSC=48MHz, Ta=25C, no load 5052HxP, f OSC=80MHz, Ta=25C, no load Negative Resistance -2000 -1500 -1000 -500 10 20 30 40 50 60 Frequency [MHz] Negative Resistance [Ω] C0: none C0: 1pF C0: 2pF -2000 -1500 -1000 -500 20 30 40 50 60 70 80 Frequency [MHz] Negative Resistance [Ω] C0: 2pF C0: none C0: 1pF 5052Hx1, V DD=3.3V , Ta=25C 5052HxP, V DD=3.3V , Ta=25C Measurement equipment: Agilent Impedance analyzer 4396B Th ey may vary in a measurement jig, and measurement environment. The figures show the measurement result of the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. They were performed with Agilent 4396B using the NPC test jig.
SEIKO NPC CORPORATION - 12 Frequency Deviation by Voltage -1.0 -0.5 0.0 0.5 1.0 V DD[V] Frequency deviation [ppm] ] -1.0 -0.5 0.0 0.5 1.0 V DD[V] Frequency deviation [ppm] ] 5052Hx1, f OSC=40MHz, Ta=25C, 2.5V std. 5052HxP, f OSC=80MHz, Ta=25C, 2.5V std. Drive Level 100 VDD [V] Drive Level [μW]] 100 VDD [V] Drive Level [μW]] 5052Hx1, f OSC=40MHz, Ta=25C 5052HxP, f OSC=80MHz, Ta=25C Phase Noise -180 -160 -140 -120 -100 -80 -60 Offset Frequency [Hz] Phase Noise [dBc/Hz]] -180 -160 -140 -120 -100 -80 -60 Offset Frequency [Hz] Phase Noise [dBc/Hz]] 5052Hx1, fOSC=40MHz, VDD=3.3V , Ta=25C 5052HxP, f OSC=80MHz, VDD=3.3V , Ta=25C Measurement equipment: Signal Source Analyzer Agilent E5052B
SEIKO NPC CORPORATION - 13 Output Waveform 5.00ns 550mV 5 0 5 2 H x 1 v e r s i o n , VDD=3.3V , fOUT=40MHz, CLOUT=15pF, Ta: Room temperature 550mV 2.50ns 5 0 5 2 H x P v e r s i o n , VDD=3.3V , fOUT=80MHz, CLOUT=15pF, Ta: Room temperature Measurement equipment: Oscilloscope Agilent DSO80604B
SEIKO NPC CORPORATION - 14 Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter ”Products”) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment, transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email:sales@npc.co.jp ND12015-E-00 2012.07