505-AD8295ACPZ-R7CT-ND

AD8295 AD | Alldatasheet

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Precision Instrumentation Amplifier with Signal Processing Amplifiers AD8295 Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2008 Analog Devices, Inc. All rights reserved.

FEATURES

Includes precision in-amp, 2 op amps, and 2 matched resistors 4 mm × 4 mm LFCSP No heat slug for more routing room Differential output fully specified In-amp specifications Gain set with 1 external resistor (gain range: 1 to 1000) 8 nV/√Hz @ 1 kHz, maximum input voltage noise 90 dB minimum CMRR (G = 1) 0.8 nA maximum input bias current

1.2 MHz, −3 dB bandwidth (G = 1)

2 V/μs slew rate

Wide power supply range: ±2.3 V to ±18 V 1 ppm/°C, 0.03% resistor matching

APPLICATIONS

Industrial process controls Wheatstone bridges Precision data acquisition systems Medical instrumentation Strain gages Transducer interfaces Differential output CONNECTION DIAGRAM A1 OUT A1 R2 A2 +IN A2 –IN –IN RG +VS –VS OUT REF RG +IN 8765 13141516 IA 20kΩ 20kΩ A2 OUT AD8295 A1 +IN A1 R1 A1 –IN 07343-001 Figure 1. Table 1. Instrumentation Amplifiers by Category amplifiers, and two precisely matched 10 kΩ resistors. signals even in the presence of large common-mode interference.

Rev. 0 | Page 2 of 28 TABLE OF CONTENTS Instrumentation Amplifier Specifications, Single-Ended and High Accuracy G = −1 Configuration with Low-Pass Filter .. 23

REVISION HISTORY

10/08—Revision 0: Initial Version

Rev. 0 | Page 3 of 28 SPECIFICATIONS INSTRUMENTATION AMPLIFIER SPECIFICATIONS, SINGLE-ENDED AND DIFFERENTIAL OUTPUT CONFIGURATIONS VS = ±15 V , VREF = 0 V , TA = 25°C, G = 1, RL = 2 kΩ, unless otherwise noted. The differential configuration is shown in Figure 59. Table 2. A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit COMMON-MODE REJECTION RATIO (CMRR) VCM = −10 V to +10 V CMRR, DC to 60 Hz 1 kΩ source imbalance G = 1 80 90 dB G = 10 100 110 dB G = 100 120 130 dB G = 1000 130 140 dB CMRR at 8 kHz G = 1 80 80 dB G = 10 90 100 dB G = 100 100 120 dB G = 1000 110 120 dB NOISE Voltage Noise, 1 kHz RTI noise = √(eNI2 + (eNO/G)2) Input Voltage Noise, eNI V IN+, VIN−, VREF = 0 V 8 8 nV/√Hz Output Voltage Noise, eNO V IN+, VIN−, VREF = 0 V 75 75 nV/√Hz RTI f = 0.1 Hz to 10 Hz G = 1 2 2 μV p-p G = 10 0.5 0.5 μV p-p G = 100 to 1000 0.25 0.25 μV p-p Current Noise f = 1 kHz 40 40 fA/√Hz f = 0.1 Hz to 10 Hz 6 6 pA p-p VOLTAGE OFFSET RTI VOS = (VOSI) + (VOSO/G) Input Offset, VOSI V S = ±5 V to ±15 V 120 60 μV Over Temperature TA = −40°C to +85°C 150 80 μV Average TC 0.4 0.3 μV/°C Output Offset, VOSO V S = ±5 V to ±15 V 500 350 μV Over Temperature TA = −40°C to +85°C 0.8 0.5 mV Average TC 9 5 μV/°C Offset RTI vs. Supply (PSR) VS = ±2.3 V to ±18 V G = 1 90 110 94 110 dB G = 10 110 120 114 130 dB G = 100 124 130 130 140 dB G = 1000 130 140 140 150 dB INPUT CURRENT Input Bias Current 0.5 2.0 0.2 0.8 nA Over Temperature TA = −40°C to +85°C 3.0 1.5 nA Average TC 1 1 pA/°C Input Offset Current 0.2 1 0.1 0.5 nA Over Temperature TA = −40°C to +85°C 1.5 0.6 nA Average TC 1 0.5 2 pA/°C

Rev. 0 | Page 4 of 28 A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit GAIN G = 1 + (49.4 kΩ/RG) Gain Range 1 1000 1 1000 V/V Gain Error VOUT ± 10 V G = 1 0.05 0.02 % G = 10 0.3 0.1 % G = 100 0.3 0.1 % G = 1000 0.3 0.1 % Gain Nonlinearity VOUT = −10 V to +10 V G = 1 3 10 1 5 ppm G = 10 7 20 7 20 ppm G = 100 7 20 7 20 ppm Gain vs. Temperature G = 1 5 1 ppm/°C G > 1 −50 −50 ppm/°C DYNAMIC RESPONSE (SINGLE- ENDED CONFIGURATION) Small Signal −3 dB Bandwidth G = 1 1200 1200 kHz G = 10 750 750 kHz G = 100 140 140 kHz G = 1000 15 15 kHz Settling Time 0.01% 10 V step G = 1 to 100 10 10 μs G = 1000 80 80 μs Settling Time 0.001% 10 V step G = 1 to 100 13 13 μs G = 1000 110 110 μs Slew Rate G = 1 1.5 2 1.5 2 V/μs G = 5 to 1000 2 2.5 2 2.5 V/μs DYNAMIC RESPONSE (DIFFERENTIAL OUTPUT CONFIGURATION) Small Signal −3 dB Bandwidth G = 1 1200 1200 kHz G = 10 1000 1000 kHz G = 100 140 140 kHz G = 1000 15 15 kHz Settling Time 0.01% 10 V step G = 1 to 100 10 10 μs G = 1000 80 80 μs Settling Time 0.001% 10 V step G = 1 to 100 13 13 μs G = 1000 110 110 μs Slew Rate G = 1 1.5 2 1.5 2 V/μs G = 5 to 1000 2 2.5 2 2.5 V/μs REFERENCE INPUT RIN 20 20 kΩ IIN V IN+, VIN−, VREF = 0 V 50 60 50 60 μA Voltage Range −VS +VS −V S +VS V Gain to Output 1 ± 0.0001 1 ± 0.0001 V/V

Rev. 0 | Page 5 of 28 A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit INPUT Input Impedance Differential 100||2 100||2 GΩ||pF Common Mode 100||2 100||2 GΩ||pF Input Operating Voltage Range1 Over Temperature TA = −40°C to +85°C −VS + 2.0 +VS − 1.2 −VS + 2.0 +VS − 1.2 V Input Operating Voltage Range1 VS = ±5 V to ±18 V −VS + 1.9 +VS − 1.2 −VS + 1.9 +VS − 1.2 V Over Temperature TA = −40°C to +85°C −VS + 2.0 +VS − 1.2 −VS + 2.0 +VS − 1.2 V OUTPUT R L = 10 kΩ Over Temperature TA = −40°C to +85°C −VS + 1.4 +VS − 1.3 −VS + 1.4 +VS − 1.3 V Output Swing VS = ±5 V to ±18 V −VS + 1.2 +VS − 1.4 −VS + 1.2 +VS − 1.4 V Over Temperature TA = −40°C to +85°C −VS + 1.6 +VS − 1.5 −VS + 1.6 +VS − 1.5 V Short-Circuit Current 18 18 mA 1 One input grounded; G = 1. OP AMP SPECIFICATIONS VS = ±15 V , TA = 25°C, RL = 2 kΩ, unless otherwise noted. Table 3. A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage, VOS 40 20 μV Average TC TA = −40°C to +85°C 4 2 μV/°C Input Bias Current1 10 8 nA T A = −40°C 20 16 nA T A = +85°C 10 8 nA Input Offset Current 2 0.5 nA Over Temperature TA = −40°C to +85°C 2 0.5 nA Input Voltage Range −VS + 1.2 +VS − 1.2 −VS + 1.2 +VS − 1.2 V Open-Loop Gain 100 125 116 125 dB Common-Mode Rejection Ratio 100 100 dB Power Supply Rejection Ratio 90 110 94 110 dB Voltage Noise Density 40 40 nV/√Hz Voltage Noise f = 0.1 Hz to 10 Hz 2.2 2.2 μV p-p DYNAMIC PERFORMANCE Gain Bandwidth Product 1 1 MHz Slew Rate 2.6 2.6 V/μs OUTPUT CHARACTERISTICS Over Temperature TA = −40°C to +85°C −VS + 1.4 +VS − 1.3 −VS + 1.4 +VS − 1.3 V Output Swing VS = ±5 V to ±18 V −VS + 1.2 +VS − 1.4 −VS + 1.2 +VS − 1.4 V Over Temperature TA = −40°C to +85°C −VS + 1.6 +VS − 1.5 −VS + 1.6 +VS − 1.5 V Short-Circuit Current 18 18 mA 1 Op amp uses an npn input stage, so input bias current always flows into the inputs.

Rev. 0 | Page 6 of 28 INTERNAL RESISTOR NETWORK When used with internal Op Amp A1, TA = 25°C, unless otherwise noted. Use in external op amp feedback loops is not recommended. Table 4. A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit Nominal Resistor Value 20 20 kΩ Resistor Matching 0.1 0.03 % Matching Temperature Coefficient TA = −40°C to +85°C 5 1 ppm/°C Absolute Resistor Accuracy 0.2 0.1 % Absolute Temperature Coefficient TA = −40°C to +85°C −50 −50 ppm/°C POWER AND TEMPERATURE SPECIFICATIONS VS = ±15 V , VREF = 0 V , TA = 25°C, unless otherwise noted. Table 5. A Grade B Grade Parameter Test Conditions Min Typ Max Min Typ Max Unit POWER SUPPLY Operating Range ±2.3 ±18 ±2.3 ±18 V Quiescent Current In-amp + two op amps 2 2.3 2 2.3 mA Over Temperature TA = −40°C to +85°C 2.5 2.5 mA TEMPERATURE RANGE Specified Performance −40 +85 −40 +85 °C Operational Performance1 −40 +125 −40 +125 °C 1 See the section for expected operation from 85°C to 125°C. Typical Performance Characteristics

Rev. 0 | Page 7 of 28 ABSOLUTE MAXIMUM RATINGS Table 6. Parameter Rating Supply Voltage ±18 V Output Short-Circuit Current Indefinite Input Voltage Common-Mode ±V S Differential ±V S Storage Temperature Range −65°C to +130°C Operating Temperature Range1 −40°C to +125°C Lead Temperature (Soldering, 10 sec) 300°C Junction Temperature 130°C ESD (Human Body Model) 2000 V ESD (Charge Device Model) 500 V ESD (Machine Model) 200 V 1 Temperature range for specified performance is −40°C to +85°C. See the Typical Performance Characteristics section for expected operation from 85°C to 125°C. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS Specifications are provided for a device in free air. Table 7. Package θ JA Unit 16-Lead LFCSP_VQ 86 °C/W ESD CAUTION

11 A1 +IN

12 A2 OUT

10 A1 R1

9 A1 –IN

Figure 2. Pin Configuration Table 8. Pin Function Descriptions 1 −IN In-Amp Negative Input. 2, 3 RG In-Amp Gain-Setting Resistor Terminals. 4 +IN In-Amp Positive Input. 6 REF In-Amp Reference Terminal. Drive with a low impedance source. Output is referred to this pin. 8 A1 R2 Resistor R2 Terminal. Connected internally to Op Amp A1 inverting input. 9 A1 −IN Op Amp A1 Inverting Input. Midpoint of resistor divider. 10 A1 R1 Resistor R1 Terminal. Connected internally to Op Amp A1 inverting input. 11 A1 +IN Op Amp A1 Noninverting Input. 13 A2 −IN Op Amp A2 Inverting Input. 14 A2 +IN Op Amp A2 Noninverting Input.

Figure 48. Gain Drift Using On-Chip Resistor Divider, G = 2

0.65 TYP

0.05 MAX

0.02 NOM

0.20 REF

0.60 MAX

1.95 REF

Figure 66. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]

Rev. 0 | Page 27 of 28 NOTES

Rev. 0 | Page 28 of 28 NOTES ©2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the prop erty of their respective owners. D07343-0-10/08(0)