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SEIKO NPC CORPORATION —1 Crystal Oscillator Module ICs OVERVIEW The 5027 series are miniature crystal oscillator module ICs. The oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with existing devices, and sig- nificantly reducing the oscillator characteristics supply voltage dependency. There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
I Wide range of operating supply voltage: 1.60 to 3.63V I Regulated voltage drive oscillator circuit for reduced power consumption and crystal drive current I Optimized low crystal drive current oscillation for miniature crystal units I 3 pad layout options for mounting
- 5027A , M series: for Flip Chip Bonding
- 5027B , N series : for Wire Bonding (type I)
- 5027C , P series : for Wire Bonding (type II) I Recommended oscillation frequency range For fundamental oscillator
- Low frequency version : 20MHz to 60MHz
- High frequency version: 60MHz to 100MHz For 3rd overtone oscillator
- Low frequency version : 40MHz to 110MHz I Multi-stage frequency divider for low-frequency output support: 0.9MHz (min) I Frequency divider built-in (for fundamental oscil- lator)
- Selectable by version: f O , f O /2, f O /4, f O /8, f O /16, f O /32, f O /64 I 40 to 85 C operating temperature range I Standby function
- High impedance in standby mode, oscillator stops I CMOS output duty level (1/2VDD) I 50 ± 5% output duty I 15pF output drive capability I Wafer form (WF5027 Chip form (CF5027
APPLICATIONS
I 3.2 2.5, 2.5 2.0, 2.0 1.6 size miniature crystal oscillator modules
ORDERING INFORMATION
–4 Wafer form CF5027 –4 Chip form
SEIKO NPC CORPORATION —2 SERIES CONFIGURATION For Fundamental Oscillator For 3rd Overtone Oscillator VERSION NAME Operating supply voltage range [V] Output drive capability [mA] PAD layout Recommended oscillation frequency range [MHz] *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla- tion frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. Version *2. Wafer form devices have designation WF5027 and chip form devices have designation CF5027 f O output f O output f O output f O output f O /16 output f O /32 output f O /64 output 1.60 to 3.63 Flip Chip Bonding 20 to 60 5027A1 5027A2 5027A3 5027A4 5027A5 5027A6 5027A7 60 to 100 5027AP 5027AQ 5027AR 5027AS 5027AT 5027AV 5027AW Wire Bonding Type I 20 to 60 5027B1 5027B2 5027B3 5027B4 5027B5 5027B6 5027B7 60 to 100 5027BP 5027BQ 5027BR 5027BS 5027BT 5027BV 5027BW Wire Bonding Type II 20 to 60 5027C1 5027C2 5027C3 5027C4 5027C5 5027C6 5027C7 60 to 100 5027CP 5027CQ 5027CR 5027CS 5027CT 5027CV 5027CW Operating supply voltage range [V] Output drive capability [mA] PAD layout Recommended oscillation frequency range [MHz] and version *1. The recommended oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscilla- tion frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. *2. Wafer form devices have designation WF5027 and chip form devices have designation CF5027 40 to 50 50 to 65 65 to 85 85 to 110 1.60 to 3.63 Flip Chip Bonding 5027MA 5027MB 5027MC 5027MD Wire Bonding Type I 5027NA 5027NB 5027NC 5027ND Wire Bonding Type II 5027PA 5027PB 5027PC 5027PD Device Package Version name WF5027 –4 Wafer form CF5027 –4 Chip form WF5027 −4 Oscillation frequency range, frequency divider function Pad layout type Form A, M: for Flip Chip Bonding B, N: for Wire Bonding (type I) C, P: for Wire Bonding (type II) WF: Wafer form CF: Chip (Die) form
SEIKO NPC CORPORATION —3 PAD LAYOUT (Unit: µ PAD DIMENSIONS PIN DESCRIPTION BLOCK DIAGRAM I 5027A , M (for Flip Chip Bonding) I 5027B , N (for Wire Bonding (type I)) I 5027C , P (for Wire Bonding (type II)) Chip size: 0.75 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: V SS level Chip size: 0.75 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: V SS level Chip size: 0.75 0.69mm Chip thickness: 130 ± 15µm PAD size: 90µm Chip base: V SS level Pad No. Pad dimensions [µm] Pad No. Pin Name Description XY 5027A 5027M 5027B 5027N 5027C 5027P 1 229 114 1 2 1 XT Amplifier input Crystal connection pins. Crystal is connected between XT and XTN.2 520 114 2 1 2 XTN Amplifier output 3 636 304 3 6 5 VDD (+) supply voltage – 4 636 531 4 5 4 Q Output Output frequency determined by internal circuit to one of f O , f O /2, f O /4, f O /8, f O /16, f O /32, f O /64 5 114 531 5 4 3 VSS (–) ground – 6 114 304 6 3 6 INHN Output state control input High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. For Fundamental Oscillator For 3rd Overtone Oscillator Q VDD XTN VSS (0,0) (750,690) X Y INHN XT VSS INHN XT Q (0,0) (750,690) X Y VDD XTN Q VSS XTN VDD (0,0) (750,690) X Y INHN XT XT INHN XTN QCMOS RD CG VSS VDD CD RFVReg N XT INHN XTN QCMOS RD CG VSS VDD CD RFVReg
SEIKO NPC CORPORATION —4 VERSION DISCRIMINATION INTERNAL COMPONENTS The 5027 series device version is not determined solely by the mask pattern, but can also be determined by the trimming of internal trimming fuses. I Version determined by laser trimming: These chips are produced from a common device by the laser trimming of fuses corresponding to the ordered version, shown in table 1. These devices are shipped for electrical characteristics testing. Laser-trimmed ver- sions are identified externally by the combination of the version name marking (1) and the locations of trimmed fuses (2). I Version determined by mask pattern: These chips are fabricated using the mask corresponding to the ordered version, and do not require trimming. Mask-fabricated versions are identified externally by the version name marking (1) only. Since the 5027 series devices are manufactured using 2 methods, there are 2 types of IC chip available (identi- fied externally) for the same version name. The identi fication markings for all 5027 series device versions is shown in table 2. (750,690) NPC F1 F2 F3 F4 F5 F6 F7 F8 F9 5027 (2) Trimming fuses (1) Version code on die
Table 1. Version and trimming fuses Table 2. Version and trimming fuses (for 3rd overtone oscillator)
Table 3. Version identification by version name and chip markings (for fundamental oscillator)
Table 4. Version identification by version name and chip markings (for 3rd overtone oscillator)
SEIKO NPC CORPORATION —8 SPECIFICATIONS Absolute Maximum Ratings VSS = 0V Note. Absolute maximum ratings are the values that must never exceed even for a moment. This product may suffer breakdown if any one of these parameter ratings is exceeded. Operation and characteristics are guaranteed only when the product is operated at recommended supply voltage range. Recommended Operating Conditions For Fundamental Oscillator VSS = 0V For 3rd Overtone Oscillator V SS = 0V Parameter Symbol Condition Rating Unit Supply voltage range VDD Between VDD and VSS −0.5 to +4.0 V Input voltage range*1 *1. VDD is a VDD value of recommended operating conditions. VIN Input pins −0.5 to VDD + 0.5 V Output voltage range*1 VOUT Output pins −0.5 to VDD + 0.5 V Storage temperature range T STG Wafer form −65 to +150 °C Output current I OUT Q pin ± 20 mA Parameter Symbol Condition Rating Unit min typ max Operating supply voltage VDD CLOUT ≤ 15pF 1.60 – 3.63 V Input voltage VIN Input pins VSS –V DD V Operating temperature T OPR −40 – +85 °C Oscillation frequency*1 *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. fO 5027×1 to 5027×7 2 0–6 0 M H z 5027×P to 5027×W 60 – 100 MHz Output frequency fOUT CLOUT ≤ 15pF 5027×1 to 5027×7 0.9 – 60 MHz 5027×P to 5027×W 0.9 – 100 MHz Parameter Symbol Condition Rating Unit min typ max Operating supply voltage V DD CLOUT ≤ 15pF 1.60 – 3.63 V Input voltage VIN Input pins VSS –V DD V Operating temperature T OPR −40 – +85 °C Oscillation frequency*1 *1. The oscillation frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillation frequency range is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. f O 5027×A 4 0–5 0 M H z 5027×B 5 0–6 5 M H z 5027×C 6 5–8 5 M H z 5027×D 85 – 110 MHz
SEIKO NPC CORPORATION —9
Electrical Characteristics
For Fundamental Oscillator: Low frequency version (5027×1 to 5027×7) VDD = 1.60 to 3.63V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 3, IOH = – 4mA VDD – 0.4 – – V LOW-level output voltage V OL Q: Measurement cct 3, IOL = 4mA – – 0.4 V HIGH-level input voltage V IH INHN, Measurement cct 4 0.7VDD –– V LOW-level input voltage V IL INHN, Measurement cct 4 – – 0.3V DD V Output leakage current I Z Q: Measurement cct 5, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – 10 – – µA Current consumption*1 *1. The consumption current IDD (CLOUT) with a load capacitance (CLOUT) connected to the Q pin is given by the following equation, where IDD is the no- load consumption current and fOUT is the output frequency. IDD (CLOUT) [mA] = IDD [mA] + CLOUT [pF] × VDD [V] × fOUT [MHz] × 10–3 IDD 5027×1 (fO), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 48MHz VDD = 3.3V – 1.6 2.4 mA VDD = 2.5V – 1.3 2.0 mA VDD = 1.8V – 1.0 1.5 mA 5027×2 (fO/2), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 24MHz VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 0.9 1.4 mA 5027×3 (fO/4), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 12MHz VDD = 3.3V – 1.3 2.0 mA VDD = 2.5V – 1.0 1.5 mA VDD = 1.8V – 0.8 1.2 mA 5027×4 (fO/8), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 6MHz VDD = 3.3V – 1.1 1.7 mA VDD = 2.5V – 0.9 1.4 mA VDD = 1.8V – 0.75 1.15 mA 5027×5 (fO/16), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 3MHz VDD = 3.3V – 1.05 1.6 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA 5027×6 (fO/32), Measurement cct 1, no load, INHN = open, fO = 48MHz, fOUT = 1.5MHz VDD = 3.3V – 1.0 1.5 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA 5027×7 (fO/64), Measurement cct 1, no load, INHN = open, fO = 60MHz, fOUT = 0.94MHz VDD = 3.3V – 1.0 1.5 mA VDD = 2.5V – 0.85 1.3 mA VDD = 1.8V – 0.7 1.1 mA Standby current I ST Measurement cct 1, INHN = LOW – – 10 µA INHN pull-up resistance RUP1 Measurement cct 6 0.4 1.5 8 M Ω RUP2 30 70 150 k Ω Oscillator feedback resistance R f 50 100 200 k Ω Oscillator capacitance CG Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 4.8 6 7.2 pF C D 81 0 1 2 p F
SEIKO NPC CORPORATION —10 For Fundamental Oscillator: High frequency version (5027×P to 5027×W) VDD = 1.60 to 3.63V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 3, IOH = – 4mA VDD – 0.4 – – V LOW-level output voltage V OL Q: Measurement cct 3, IOL = 4mA – – 0.4 V HIGH-level input voltage V IH INHN, Measurement cct 4 0.7VDD –– V LOW-level input voltage V IL INHN, Measurement cct 4 – – 0.3V DD V Output leakage current I Z Q: Measurement cct 5, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – 10 – – µA Current consumption*1 *1. The consumption current IDD (CLOUT) with a load capacitance (CLOUT) connected to the Q pin is given by the following equation, where IDD is the no- load consumption current and fOUT is the output frequency. IDD (CLOUT) [mA] = IDD [mA] + CLOUT [pF] × VDD [V] × fOUT [MHz] × 10–3 IDD 5027×P (fO), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 80MHz VDD = 3.3V – 2.5 3.8 mA VDD = 2.5V – 2.0 3.0 mA VDD = 1.8V – 1.6 2.4 mA 5027×Q (fO/2), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 40MHz VDD = 3.3V – 2.4 3.6 mA VDD = 2.5V – 1.9 2.9 mA VDD = 1.8V – 1.5 2.3 mA 5027×R (fO/4), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 20MHz VDD = 3.3V – 1.8 2.7 mA VDD = 2.5V – 1.5 2.3 mA VDD = 1.8V – 1.2 1.6 mA 5027×S (fO/8), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 10MHz VDD = 3.3V – 1.7 2.6 mA VDD = 2.5V – 1.4 2.1 mA VDD = 1.8V – 1.1 1.7 mA 5027×T (fO/16), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 5MHz VDD = 3.3V – 1.6 2.4 mA VDD = 2.5V – 1.3 2.0 mA VDD = 1.8V – 1.0 1.5 mA 5027×V (fO/32), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 2.5MHz VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 1.0 1.5 mA 5027×W (fO/64), Measurement cct 1, no load, INHN = open, fO = 80MHz, fOUT = 1.25MHz VDD = 3.3V – 1.5 2.3 mA VDD = 2.5V – 1.2 1.8 mA VDD = 1.8V – 1.0 1.5 mA Standby current I ST Measurement cct 1, INHN = LOW – – 10 µA INHN pull-up resistance RUP1 Measurement cct 6 0.4 1.5 8 M Ω RUP2 30 70 150 k Ω Oscillator feedback resistance R f 50 100 200 k Ω Oscillator capacitance CG Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 1.6 2 2.4 pF C D 3.2 4 4.8 pF
SEIKO NPC CORPORATION —11 For 3rd Overtone Oscillator (5027×A to 5027×D) VDD = 1.60 to 3.63V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 3, IOH = – 8mA, VDD = 2.25 to 3.63V VDD – 0.4 – – V Q: Measurement cct 3, IOH = – 4mA, VDD = 1.60 to 2.25V VDD – 0.4 – – V LOW-level output voltage V OL Q: Measurement cct 3, IOL = 8mA, VDD = 2.25 to 3.63V – – 0.4 V Q: Measurement cct 3, IOL = 4mA, VDD = 1.60 to 2.25V – – 0.4 V HIGH-level input voltage V IH INHN, Measurement cct 4 0.7VDD –– V LOW-level input voltage V IL INHN, Measurement cct 4 – – 0.3V DD V Output leakage current I Z Q: Measurement cct 5, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – 10 – – µA Current consumption*1 *1. The consumption current IDD (CLOUT) with a load capacitance (CLOUT) connected to the Q pin is given by the following equation, where IDD is the no- load consumption current and fOUT is the output frequency. IDD (CLOUT) [mA] = IDD [mA] + CLOUT [pF] × VDD [V] × fOUT [MHz] × 10–3 IDD 5027×A, Measurement cct 1, no load, INHN = open, fO = 48MHz VDD = 3.3V – 3.6 5.4 mA VDD = 2.5V – 3.0 4.5 mA VDD = 1.8V – 2.6 3.9 mA 5027×B, Measurement cct 1, no load, INHN = open, fO = 54MHz VDD = 3.3V – 3.8 5.7 mA VDD = 2.5V – 3.2 4.8 mA VDD = 1.8V – 2.8 4.2 mA 5027×C, Measurement cct 1, no load, INHN = open, fO = 85MHz VDD = 3.3V – 4.8 7.2 mA VDD = 2.5V – 4.0 6.0 mA VDD = 1.8V – 3.4 5.1 mA 5027×D, Measurement cct 1, no load, INHN = open, fO = 100MHz VDD = 3.3V – 5.3 8.0 mA VDD = 2.5V – 4.4 6.6 mA VDD = 1.8V – 3.6 5.4 mA Standby current I ST Measurement cct 1, INHN = LOW – – 10 µA INHN pull-up resistance RUP1 Measurement cct 6 0.4 1.5 8 M Ω RUP2 30 70 150 k Ω Oscillator feedback resistance R f 5027×A 2.6 3.8 5.0 k Ω 5027×B 2.2 3.2 4.2 k Ω 5027×C 1.9 2.8 3.7 k Ω 5027×D 1.9 2.8 3.7 k Ω Oscillator capacitance CG Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×A 9.6 12 14.4 pF 5027×B 6.4 8 9.6 pF 5027×C 4.8 6 7.2 pF 5027×D 1.6 2 2.4 pF C D Design value (a monitor pattern on a wafer is tested), Excluding parasitic capacitance. 5027×A 9.6 12 14.4 pF 5027×B 9.6 12 14.4 pF 5027×C 6.4 8 9.6 pF 5027×D 4.8 6 7.2 pF
SEIKO NPC CORPORATION —13 FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the Q output becomes high impedance. Power-saving Pull-up Resistor The INHN pin pull-up resistance RUP1 or RUP2 changes in response to the input level (HIGH or LOW). When INHN is tied LOW level, the pull-up resistance is large (R UP1), reducing the current consumed by the resis- tance. When INHN is left open circuit, the pull-up resistance is small (RUP2), which increases the input suscep- tibility to external noise. However, the pull-up resistance ties the INHN pin HIGH level to prevent external noise from unexpectedly stopping the output. Oscillation Detector Function The 5027 series also feature an oscillation detector circuit. This circuit functions to disable the outputs until the oscillator circuit starts and oscillation becomes stable. This alleviates the danger of abnormal oscillator output at oscillator start-up when power is applied or when INHN is switched. INHN Q Oscillator HIGH (or open) Frequency output Normal operation LOW High impedance Stopped
SEIKO NPC CORPORATION —14 MEASUREMENT CIRCUITS Measurement cct 1 Measurement parameter: IDD, IST, Duty, tr , tf Note: The AC characteristics are observed using an oscilloscope on pin Q. Measurement cct 2 Measurement parameter: tOD XTN input signal: 1Vp-p, sine wave C1: 0.001µFC LOUT: 15pF R1: 50Ω RL: 1kΩ Measurement cct 3 Measurement parameter: VOH, VOL XTN input signal: 1Vp-p, sine wave VDD VSS XT Q X'tal XTN INHN IDD ISTA (Including probe capacitance) CLOUT = 15pF IDD: Open IST: Short 0.1µF IDD: Open VDD VSS Q XTN INHN Signal Generator VDD or VSS RL CLOUT 0.1µF VDD VSS Q XTNSignal Generator 50Ω 0.001µF VOH VOL V 50Ω 0.1µFV S VOH VS VOL VS 0.1µF VS adjusted such that ∆V = 50 × IOH. VS adjusted such that ∆V = 50 × IOL. Measurement cct 4 Measurement parameter: VIH, VIL VIH: Voltage in VSS to VDD transition that changes the output state. VIL: Voltage in VDD to VSS transition that changes the output state. INHN has an oscillation stop function. Measurement cct 5 Measurement parameter: IZ Measurement cct 6 Measurement parameter: RUP1, RUP2 VDD VSS XT QX'tal XTN INHN VIH VIL V 0.1µF VDD VSS Q INHN IZ A VDD or VSS 0.1µF VDD VSSINHN VIN V A IUP VDD IUP (VIN = 0V) RUP2 = IUP VDD 0.7VDD RUP1 = (VIN = 0.7VDD) 0.1µF
SEIKO NPC CORPORATION —15 TYPICAL PERFORMANCE (for fundamental oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement I Crystal parameters Current Consumption Negative Resistance Parameter f O = 48MHz f O = 80MHz C0 [pF] 1.6 2.1 R1 [Ω]1 2 1 0 R1C1 5027A1, fOUT = 48MHz, Ta = 25°C 1.5 2 2.5 VDD [V] 3 3.5 4 10Current consumption [mA] CLOUT = 15pF CLOUT = 0pF 5027AP, fOUT = 80MHz, Ta = 25°C 1.5 2 2.5 VDD [V] 3 3.5 4 10Current consumption [mA] CLOUT = 15pF CLOUT = 0pF 5027×1 to ×7, VDD = 3.3V , Ta = 25°C 302010 40 50 60 Frequency [MHz] –200 –400 –600 –800 –1000 Negative resistance [Ω] C0 = 0pF C0 = 1pF C0 = 2pF 5027×P to ×W, VDD = 3.3V , Ta = 25°C 706050 80 90 100 Frequency [MHz] –200 –400 –600 –800 –1000 Negative resistance [Ω] C0 = 0pF C0 = 1pF C0 = 2pF Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions.
SEIKO NPC CORPORATION —16 Frequency Deviation by Supply Voltage Change Drive Level Phase Noise Measurement equipment: Agilent E5052 Signal Source Analyzer 5027×1 to ×7, fOUT = 48MHz, 3.3V standard, Ta = 25°C 2.11.6 VDD [V] 2.6 3.1 3.6 –0.5 0.5 ∆f/f [ppm] 5027×P to ×W, fOUT = 80MHz, 3.3V standard, Ta = 25°C 2.11.6 VDD [V] 2.6 3.1 3.6 –0.5 0.5 ∆f/f [ppm] 5027×1 to ×7, fOUT = 48MHz, Ta = 25°C 1.5 2 2.5 VDD [V] 3 3.5 4 50Drive level [µW] 5027×P to ×W, fOUT = 80MHz, Ta = 25°C 1.5 2 2.5 VDD [V] 3 3.5 4 50Drive level [µW] 5027A1, VDD = 3.3V , fOSC = fOUT = 48MHz, Ta = 25°C 10,000 100,000 1,000,000 10,000,00 01,00010010 Offset frequency [Hz] –160 –140 –120 –100 –80 –60 –40 Phase noise [dBc/Hz] 5027AP, VDD = 3.3V , fOSC = fOUT = 80MHz, Ta = 25°C 10,000 100,000 1,000,000 10,000,00 01,00010010 Offset frequency [Hz] –160 –140 –120 –100 –80 –60 –40 Phase noise [dBc/Hz]
SEIKO NPC CORPORATION —17 Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027A1, VDD = 3.3V , fOUT = 48MHz, CLOUT = 15pF, Ta = 25°C 5027AP, VDD = 3.3V , fOUT = 80MHz, CLOUT = 15pF, Ta = 25°C
SEIKO NPC CORPORATION —18 TYPICAL PERFORMANCE (for 3rd overtone oscillator) The following characteristics measured using the crystal below. Note that the characteristics will vary with the crystal used. I Crystal used for measurement I Crystal parameters Current Consumption Negative Resistance Parameter f O = 85MHz f O = 100MHz C0 [pF] 0.9 1.2 R1 [Ω]5 6 4 5 R1C1 5027×D, fOUT = 85MHz, Ta = 25°C 12Current consumption [mA] 1.6 2.2 2.8 VDD [V] 3.4 4 CLOUT = 15pF CLOUT = 0pF 5027AP, fOUT = 100MHz, Ta = 25°C 12Current consumption [mA] 1.6 2.2 2.8 VDD [V] 3.4 4 CLOUT = 15pF CLOUT = 0pF 5027×D, Ta = 25°C, recommended operating frequency range: 85MHz to 110MHz Characteristics are measured with a capacitance C0, representing the crystal equivalent circuit C0 capacitance, connected between the XT and XTN pins. Measurements are performed with Agilent 4396B using the NPC test jig. Characteristics may vary with measurement jig and measurement conditions. Frequency [MHz] 0 40 80 120 160 200 –200 –400 –600 –800 –1000 Negative resistance [Ω] 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V 1.8V 2.5V 3.3V C0 = 2pF C0 = 1pF C0 = 0pF
SEIKO NPC CORPORATION —19 Frequency Deviation by Supply Voltage Change Drive Level Phase Noise Measurement equipment: Agilent E5052 Signal Source Analyzer 5027×D, fOUT = 85MHz, 3.3V standard, Ta = 25°C –0.5 0.5 ∆f/f [ppm] 2.11.6 VDD [V] 2.6 3.1 3.6 5027×D, fOUT = 100MHz, 3.3V standard, Ta = 25°C –0.5 0.5 ∆f/f [ppm] 2.11.6 VDD [V] 2.6 3.1 3.6 5027×D, fOUT = 85MHz, Ta = 25°C 100 150 200Drive level [µW] 1.5 2 2.5 VDD [V] 3 3.5 4 5027×D, fOUT = 100MHz, Ta = 25°C 100 150 200Drive level [µW] 1.5 2 2.5 VDD [V] 3 3.5 4 5027×D, VDD = 3.3V , fOSC = fOUT = 85MHz, Ta = 25°C –160 –140 –120 –100 –80 –60 –40 Phase noise [dBc/Hz] 10,000 100,000 1,000,000 10,000,00 01,00010010 Offset frequency [Hz] 5027×D, VDD = 3.3V , fOSC = fOUT = 100MHz, Ta = 25°C –160 –140 –120 –100 –80 –60 –40 Phase noise [dBc/Hz] 10,000 100,000 1,000,000 10,000,00 01,00010010 Offset frequency [Hz]
SEIKO NPC CORPORATION —20 Output Waveform Measurement equipment: Agilent 54855A Oscilloscope 5027×D, VDD = 3.3V , fOUT = 85MHz, CLOUT = 15pF, Ta = 25°C 5027×D, VDD = 3.3V , fOUT = 100MHz, CLOUT = 15pF, Ta = 25°C
SEIKO NPC CORPORATION —21 NC0505DE 2010.02 Please pay your attention to the following points at time of using the products shown in this document. 1. The products shown in this document (hereinafter “Products”) are designed and manufactured to the generally accepted standards of reliability as expected for use in general electronic and electrical equipment, such as personal equipment, machine tools and measurement equipment. The Products are not designed and manufactured to be used in any other special equipment requiring extremely high level of reliability and safety, such as aerospace equipment, nuclear power control equipment, medical equipment , transportation equipment, disaster prevention equipment, security equipment. The Products are not designed and manufactured to be used for the apparatus that exerts harmful influence on the human lives due to the defects, failure or malfunction of the Products. If you wish to use the Products in that apparatus, please contact our sales section in advance. In the event that the Products are used in such apparatus without our prior approval, we assume no responsibility whatsoever for any damages resulting from the use of that apparatus. 2. NPC reserves the right to change the specifications of the Products in order to improve the characteristics or reliability thereof. 3. The information described in this document is presented only as a guide for using the Products. No responsibility is assumed by us for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of the third parties. Then, we assume no responsibility whatsoever for any damages resulting from that infringements. 4. The constant of each circuit shown in this document is described as an example, and it is not guaranteed about its value of the mass- production products. 5. In the case of that the Products in this document falls under the foreign exchange and foreign trade control law or other applicable laws and regulations, approval of the export to be based on those laws and regulations are necessary. Customers are requested appropriately take steps to obtain required permissions or approvals form appropriate government agencies. SEIKO NPC CORPORATION 1-9-9, Hatchobori, Chuo-ku, Tokyo 104-0032, Japan Telephone: +81-3-5541-6501 Facsimile: +81-3-5541-6510 http://www.npc.co.jp/ Email: sales @npc.co.jp