5026 NPC | Alldatasheet

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SEIKO NPC CORPORATION —1 Crystal Oscillator Module ICs OVERVIEW The 5026 series are miniature crystal oscillator module ICs. They feature a damping resistor R D matched to the crystal's characteristics to reduce crystal current. They support fundamental oscillation and 3rd overtone oscil- lation modes. The 5026 series can be used to correspond to wide range of applications.

FEATURES

I Miniature-crystal matched oscillator characteristics I Operating supply voltage range

  • 2.5V operation: 2.25 to 2.75V
  • 3.0V operation: 2.7 to 3.6V I Recommended operating frequency range
  • For fundamental oscillator - 5026AL : 20MHz to 50MHz - 5026BL1: 20MHz to 100MHz
  • For 3rd overtone oscillator - 5026ML : 70MHz to 133MHz I 40 to 85 C operating temperature range I Oscillator capacitor with excellent frequency char- acteristics built-in I Oscillator circuit with damping resistor R D built- in for reduced crystal current I Standby function
  • High impedance in standby mode, oscillator stops I Low standby current
  • Power-saving pull-up resistor built-in I Oscillation detector function I Frequency divider built-in (5026AL
  • Varies with version: f O , f O /2, f O /4, f O /8, f O /16, f O /32 I CMOS output duty level (1/2VDD) I 50 ± 5% output duty @ 1/2VDD I 30pF output load I Molybdenum-gate CMOS process I Chip form (CF5026 L SERIES CONFIGURATION

ORDERING INFORMATION

range [V] Oscillation mode Recommended operating frequency range (fundamental oscillation) [MHz] *1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authenticati on. However, the oscil- lator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated. Output current DD = 2.5V) [mA] Output frequency Output duty level Standby mode Oscillator stop function Output state CF5026AL1 2.25 to 3.6 Fundamental 20 to 50 4 f O CMOS Y es Hi-Z CF5026AL2 f O CF5026AL3 f O CF5026AL4 f O CF5026AL5 f O /16 CF5026AL6 f O /32 CF5026BL1 *2. The CF5026BL1 has a higher maximum operating frequency, hence the negative resistance is also larger than in the CF5026AL devices. 2.25 to 3.6 Fundamental 20 to 100 8 f O CMOS Y es Hi-Z CF5026MLA 2.25 to 3.6 3rd overtone 70 to 80 O CMOS Y es Hi-ZCF5026MLB 80 to 100 CF5026MLC 90 to 133 Device Package CF5026 L –3 Chip form

SEIKO NPC CORPORATION —2 PAD LAYOUT (Unit: µ PIN DESCRIPTION and PAD DIMENSIONS Chip size: 0.75 0.85mm Chip thickness: 180 ± 20µm PAD size: 90µm Chip base: V DD level Name I/O Description Pad dimensions [µm] XY INHN I Output state control input. High impedance when LOW (oscillator stops). Power-saving pull-up resistor built-in. 605 413 XT I Amplifier input Crystal connection pins. Crystal is connected between XT and XTN. 579 144 XTN O Amplifier output 171 144 VDD – Supply voltage 131 438 QO Output. Output frequency determined by internal circuit to one of f O , f O /2, f O /4, f O /8, f O /16, f O /32. High impedance in standby mode 131 705 VSS – Ground 618 718 Q VDD XTN VSS (0,0) (750,850) X Y HA5026 INHN XT NPC

SEIKO NPC CORPORATION —3 BLOCK DIAGRAM For Fundamental Oscillator (5026AL , 5026BL1) For 3rd Overtone Oscillator (5026ML INHN = LOW active INHN = LOW active XT VSSVDD Q CG CD Rf XTN INHN RD 1/2 1/21/2 1/2 1/2 XT VSSVDD Q CG CD Rf 1 XTN INHN Rf 2 Cf RD

SEIKO NPC CORPORATION —4 SPECIFICATIONS Absolute Maximum Ratings V SS = 0V Recommended Operating Conditions V SS = 0V Parameter Symbol Condition Rating Unit Supply voltage range V DD 0.5 to +7.0 V Input voltage range V IN 0.5 to V DD + 0.5 V Output voltage range V OUT 0.5 to V DD + 0.5 V Operating temperature range T opr 40 to +85 C Storage temperature range T STG 65 to +150 C Output current I OUT 20 mA Parameter Symbol Condition Rating Unit min typ max Operating supply voltage V DD 5026AL CL 30pF 2.25 – 3.6 V 5026BL1 CL 30pF 2.25 – 3.6 V 5026MLA f 80MHz, CL 30pF 2.25 – 3.6 V 5026MLB f 100MHz, CL 30pF 2.25 – 3.6 V 5026MLC f 100MHz, CL 30pF 2.25 – 3.6 V f 133MHz, CL 15pF 2.25 – 3.6 V Input voltage V IN V SS DD V Operating temperature T OPR 40 – +85 C Operating frequency *1. The operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation char- acteristics of components must be carefully evaluated. f O 5026AL 2 0–5 0 M H z 5026BL1 *2. When 2.5V operation, the ratings of switching characteristics are difference by the frequency or output load. Refer to “Switching Characteristics”. 20 – 100 MHz 5026MLA 70 – 80 MHz 5026MLB 80 – 100 MHz 5026MLC 90 – 133 MHz

SEIKO NPC CORPORATION —5

Electrical Characteristics

(2.5V operation) V DD = 2.25 to 2.75V , V SS = 0V , Ta = 40 to +85 C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, V DD = 2.25V, I OH = 4mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, V DD = 2.25V, I OL = 4mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW V OH = V DD – – 10 µA V OL = V SS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, C L = 30pF , f = 50MHz 5026AL1 – 7 14 mA 5026AL2 – 4.5 9 mA 5026AL3 – 3.5 7 mA 5026AL4 – 2.9 5.8 mA 5026AL5 – 2.5 5.0 mA 5026AL6 – 2.4 4.8 mA Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance R UP1 Measurement cct 4 2 6 12 M Ω R UP2 20 100 200 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance R D Design value. A monitor pattern on a wafer is tested. 340 400 460 Ω Built-in capacitance C G Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF C D 8.5 10 11.5 pF

SEIKO NPC CORPORATION —6 5026AL× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 50MHz 5026AL1 – 8.5 17 mA 5026AL2 – 5.5 11 mA 5026AL3 – 4 8 mA 5026AL4 – 3.3 6.6 mA 5026AL5 – 2.9 5.8 mA 5026AL6 – 2.7 5.4 mA Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4

248 M Ω

RUP2 15 75 150 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance RD Design value. A monitor pattern on a wafer is tested. 340 400 460 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF

SEIKO NPC CORPORATION —7 5026BL1 (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. 5026BL1 (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 100MHz –1 4 2 8 m A Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance RUP1 Measurement cct 4 2 6 12 M Ω RUP2 20 100 200 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance RD Design value. A monitor pattern on a wafer is tested. 170 200 230 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption I DD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF , f = 100MHz –1 9 3 8 m A Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4 RUP2 15 75 150 k Ω Feedback resistance R f Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance RD Design value. A monitor pattern on a wafer is tested. 170 200 230 Ω Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 6.8 8 9.2 pF CD 8.5 10 11.5 pF

SEIKO NPC CORPORATION —8 5026ML× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA 1.65 1.95 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 133MHz 5026MLC – 15 30 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF f = 72MHz 5026MLA – 11 22 mA f = 100MHz 5026MLB – 15 30 mA f = 100MHz 5026MLC – 15 30 mA Standby current I ST Measurement cct 3, INHN = LOW – – 3 µA INHN pull-up resistance RUP1 Measurement cct 4 2 6 12 M Ω RUP2 20 100 200 k Ω AC feedback resistance R f1 Design value. A monitor pattern on a wafer is tested. 5026MLA 3.99 4.7 5.41 k Ω 5026MLB 2.29 2.70 3.11 k Ω 5026MLC 2.97 3.5 4.03 k Ω DC feedback resistance R f2 Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance RD Design value. A monitor pattern on a wafer is tested. 85 100 115 Ω AC feedback capacitance C f Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5026MLA 1.70 2 2.30 pF 5026MLB 1.70 2 2.30 pF 5026MLC 0.85 1 1.15 pF CD Design value. A monitor pattern on a wafer is tested. 5026MLA 3.40 4 4.60 pF 5026MLB 3.40 4 4.60 pF 5026MLC 3.40 4 4.60 pF

SEIKO NPC CORPORATION —9 5026ML× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max HIGH-level output voltage V OH Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA 2.3 2.4 – V LOW-level output voltage V OL Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA – 0.3 0.4 V HIGH-level input voltage V IH INHN 0.7V DD ––V LOW-level input voltage V IL INHN – – 0.3V DD V Output leakage current I Z Q: Measurement cct 2, INHN = LOW VOH = VDD – – 10 µA VOL = VSS – – 10 µA Current consumption IDD1 Measurement cct 3, load cct 1, INHN = open, CL = 15pF f = 133MHz 5026MLC – 20 40 mA IDD2 Measurement cct 3, load cct 1, INHN = open, CL = 30pF f = 72MHz 5026MLA – 15 30 mA f = 100MHz 5026MLB – 20 40 mA f = 100MHz 5026MLC – 20 40 mA Standby current I ST Measurement cct 3, INHN = LOW – – 5 µA INHN pull-up resistance RUP1 Measurement cct 4 RUP2 15 75 150 k Ω AC feedback resistance R f1 Design value. A monitor pattern on a wafer is tested. 5026MLA 3.99 4.7 5.41 k Ω 5026MLB 2.29 2.70 3.11 k Ω 5026MLC 2.97 3.5 4.03 k Ω DC feedback resistance R f2 Measurement cct 5 50 – 150 k Ω Oscillator amplifier output resistance RD Design value. A monitor pattern on a wafer is tested. 85 100 115 Ω AC feedback capacitance C f Design value. A monitor pattern on a wafer is tested. 8.5 10 11.5 pF Built-in capacitance CG Design value. A monitor pattern on a wafer is tested. 5026MLA 1.70 2 2.30 pF 5026MLB 1.70 2 2.30 pF 5026MLC 0.85 1 1.15 pF CD Design value. A monitor pattern on a wafer is tested. 5026MLA 3.40 4 4.60 pF 5026MLB 3.40 4 4.60 pF 5026MLC 3.40 4 4.60 pF

SEIKO NPC CORPORATION —10 Switching Characteristics 5026AL× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. 5026AL× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 3 6 ns tr2 CL = 30pF – 5 10 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 3 6 ns tf2 CL = 30pF – 5 10 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C, f = 50MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2.5 5 ns tr2 CL = 30pF – 4.5 9 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2.5 5 ns tf2 CL = 30pF – 4.5 9 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, f = 50MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns

SEIKO NPC CORPORATION —11 5026BL1 (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. 5026BL1 (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2 4 ns tr2 CL = 30pF – 3 6 ns tr3 Measurement cct 3, load cct 1, 0.2VDD to 0.8VDD CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2 4 ns tf2 CL = 30pF – 3 6 ns tf3 Measurement cct 3, load cct 1, 0.8VDD to 0.2VDD CL = 30pF – 2.5 5 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C CL = 15pF f = 100MHz 4 5–5 5 % Duty2 CL = 30pF f = 80MHz 4 5–5 5 % Duty3 CL = 30pF f = 100MHz 4 0–6 0 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3 ns tr2 CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3 ns tf2 CL = 30pF – 2.5 5 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, f = 100MHz CL = 15pF 45 – 55 % Duty2 C L = 30pF 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns

SEIKO NPC CORPORATION —12 5026ML× (2.5V operation) VDD = 2.25 to 2.75V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. 5026ML× (3.0V operation) VDD = 2.7 to 3.6V , VSS = 0V , Ta = −40 to +85°C unless otherwise noted. Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 2 4 ns tr2 CL = 30pF – 3 6 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 2 4 ns tf2 CL = 30pF – 3 6 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF f = 72MHz 5026MLA 45 – 55 % f = 100MHz 5026MLB 45 – 55 % f = 133MHz 5026MLC 45 – 55 % Duty2 Measurement cct 3, load cct 1, V DD = 2.5V, Ta = 25°C, CL = 30pF f = 72MHz 5026MLA 45 – 55 % f = 100MHz 5026MLB 40 – 60 % f = 100MHz 5026MLC 40 – 60 % Output disable delay time *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns Parameter Symbol Condition Rating Unit min typ max Output rise time tr1 Measurement cct 3, load cct 1, 0.1VDD to 0.9VDD CL = 15pF – 1.5 3 ns tr2 CL = 30pF – 2.5 5 ns Output fall time tf1 Measurement cct 3, load cct 1, 0.9VDD to 0.1VDD CL = 15pF – 1.5 3 ns tf2 CL = 30pF – 2.5 5 ns Output duty cycle*1 *1. The duty cycle characteristic is checked the sample chips of each production lot. Duty1 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF f = 72MHz 5026MLA 45 – 55 % f = 100MHz 5026MLB 45 – 55 % f = 133MHz 5026MLC 45 – 55 % Duty2 Measurement cct 3, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 30pF f = 72MHz 5026MLA 45 – 55 % f = 100MHz 5026MLB 45 – 55 % Measurement cct 3, load cct 1, VDD = 3.3V, Ta = 25°C, CL = 30pF , f = 100MHz 5026MLC 45 – 55 % Output disable delay time*2 *2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not re sumed until after the oscillator start-up time has elapsed. tPLZ Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C, CL = 15pF – – 100 ns Output enable delay time*2 tPZL – – 100 ns

SEIKO NPC CORPORATION —13 Current consumption and Output waveform with NPC’s standard crystal FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance. Power-saving Pull-up Resistor The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW (standby state), the pull-up resistance becomes large to reduce the current consumption during standby. Note. The 72MHz and 100MHz crystal parameters are confidential. Version INHN Q Oscillator 5026AL× HIGH (or open) Any fO, fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency Normal operation 5026BL1, ML× fO 5026AL×, BL1, ML× LOW High impedance Stopped f [MHz] R [ Ω] L [mH] Ca [fF] Cb [pF] 50 16.12 6.88 1.48 1.18 72 −−−− 1 0 0 −−−− L Ca R Cb

SEIKO NPC CORPORATION —14 MEASUREMENT CIRCUITS Measurement cct 1 2Vp-p, 10MHz sine wave input signal C1: 0.001µF R1: 50Ω R2: 5026AL× : 412Ω (2.5V operation) 575Ω (3.0V operation) 5026BL1, ML× : 206Ω (2.5V operation) 287Ω (3.0V operation) Measurement cct 2 Measurement cct 3 Signal Generator VDD VSS XT Q VOH Q output VDD XTN INHN VOH VOL V A IZVDD VSS XT Q XTN INHN IZ, IOL X'tal IDD ISTA VDD VSS XT Q XTN INHN Measurement cct 4 Measurement cct 5 Measurement cct 6 2Vp-p, 10MHz sine wave input signal C1: 0.001µF R1: 50Ω Load cct 1 IPR A V VPR VDD IPR (VPR = VSS) RUP2 = IPR (VPR = 0.7VDD) VDD VPR RUP1 = VDD VSS XT Q XTN INHN IRf Rf = A VDD VSS XT Q XTN INHN VDD IRf Rf 2 = VDD IRf Signal Generator VDD VSS XT Q XTN INHN Q output CL (Including probe capacitance)

SEIKO NPC CORPORATION —15 Switching Time Measurement Waveform Output duty level, tr, tf Output duty cycle Output Enable/Disable Delay when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable oscillator output occurs after a short delay. tr3 tf3 Q output DUTY measurement voltage (0.5VDD) TW tr1,tr2 0.9VDD 0.1VDD 0.8VDD 0.2VDD 0.9VDD 0.1VDD 0.8VDD 0.2VDD tf1,tf2 DUTY measurement voltage (0.5VDD)Q output TW T DUTY= TW/ T 100 (%) Q output INHN VIH VIL tPLZ tPZL INHN input waveform tr = tf 10ns

SEIKO NPC CORPORATION —16 NC0413CE 2008.12 Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further te sting or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any ent ity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are req uested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: sales @npc.co.jp