KA5Q FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Quasi Resonant Converter Controller
  • Internal Burst Mode Controller for Stand-by Mode
  • Pulse by Pulse Current Limiting
  • Over Current Latch Protection
  • Over V oltage Protection (Vsync: Min. 11V)
  • Internal Thermal Shutdown Function
  • Under V oltage Lockout
  • Internal High V oltage Sense FET
  • Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and controller or R CC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase & efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in quasi resonant converter as C-TV power supply. TO-220F-5L TO-3PF-5L Internal Block Diagram Rsense 11V on 12V off 3 1 VREFInternal BIAS S Q R LEB 450ns S QB R Ro n Rof f Power on Reset OVP OLP7.5V - 12V Sync UVLO 15V/9V Burst Mode 3.5V/1.25V SYNCSYNCSYNCSYNC R 2.5R + Offset Thermal Thermal Thermal Thermal Shut DownShut DownShut DownShut Down SQ R Power on Reset (VCC=6.5V) Delay 80ns OCL FEEDBACKFEEDBACKFEEDBACKFEEDBACK VCCVCCVCCVCC DRAINDRAINDRAINDRAIN SOURCESOURCESOURCESOURCE Normal Mode 4.6V/2.6V OSC Idelay Ifb VREF 32V 1%+- Ron Roff KA5Q-SERIES KA5Q0765RT/KA5Q12656RT/KA5Q1265RF/ KA5Q1565RF Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Absolute Maximum Ratings (Continued) Characteristic Symbol Value Unit KA5Q0765RT Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 28 ADC Continuous Drain Current (Tc = 25°C) I D 7.0 ADC Continuous Drain Current (Tc = 100°C) I D 5.6 ADC Single Pulsed Avalanch Current(3)(Energy (2))I AS(EAS) 20(570) A(mJ) Maximum Supply Voltage V CC,MAX 40 V Input Voltage Range VFB -0.3 to VCC V VSync -0.3 to 13 V Total Power Dissipation PD 47 W Derating 0.37 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C Thermal Resistance Rthjc 2.7 °C/W KA5Q12656RT Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) I D 12 ADC Continuous Drain Current (Tc = 100°C) I D 8.4 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 30(950) A(mJ) Maximum Supply Voltage V CC,MAX 40 V Input Voltage Range VFB -0.3 to VCC V VSync -0.3 to13 V Total Power Dissipation PD 55 W Derating 0.4 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C Thermal Resistance Rthjc 2.5 °C/W

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, V DD =50V, RG = 27Ω , starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C Characteristic Symbol Value Unit KA5Q1265RF Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) I D 12 ADC Continuous Drain Current (Tc = 100°C) I D 8.4 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 33(950) A(mJ) Maximum Supply Voltage V CC,MAX 40 V Input Voltage Range VFB -0.3 to VCC V VSync -0.3 to 13 V Total Power Dissipation PD 95 W Derating 0.76 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C Thermal Resistance Rthjc 1.31 °C/W KA5Q1565RF Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 60 ADC Continuous Drain Current (Tc = 25°C) I D 15 ADC Continuous Drain Current (Tc = 100°C) I D 12.0 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 36(1050) A(mJ) Maximum Supply Voltage V CC,MAX 40 V Input Voltage Range VFB -0.3 to VCC V VSync -0.3 to 13 V Total Power Dissipation PD 98 W Derating 0.78 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C Thermal Resistance Rthjc 1.28 °C/W

Electrical Characteristics (SFET part) (Ta=25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit KA5Q0765RT Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=85°C - - 300 µA Static Drain-Source on Resistance(1) RDS(on) V GS=10V, ID=4.0A - 1.3 1.6 Ω Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz -1 1 1 0- pFOutput Capacitance Coss - 105 - Reverse Transfer Capacitance Crss - 50 - Turn on Delay Time td(on) V DD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) -2 5- nS Rise Time tr - 55 - Turn Off Delay Time td(off) - 80 - Fall Time tf - 50 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=7.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) -5 7 7 4 nC Gate-Source Charge Qgs - 9.3 - Gate-Drain (Miller) Charge Qgd - 29.3 - KA5Q12656RT/KA5Q1265RF Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=85°C - - 300 µA Static Drain-Source on Resistance (1) RDS(on) VGS=10V, ID=6A - 0.7 0.9 Ω Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1820 - pFOutput Capacitance Coss - 185 - Reverse Transfer Capacitance Crss - 32 - Turn on Delay Time td(on) V DD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) -3 8- nS Rise Time tr - 120 - Turn Off Delay Time td(off) - 200 - Fall Time tf - 100 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) -6 0 7 8 nCGate-Source Charge Qgs - 10 - Gate-Drain (Miller) Charge Qgd - 30 -

Absolute Maximum Ratings (SFET Part) (Ta=25°C, unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Characteristic Symbol Test condition Min. Typ. Max. Unit KA5Q1565RF Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=85°C - - 300 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=7.3A - 0.5 0.65 W Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 2580 - pFOutput Capacitance Coss - 270 - Reverse Transfer Capacitance Crss - 50 - Turn on Delay Time td(on) V DD=0.5BVDSS, ID=14.6A (MOSFET switching time are essentially independent of operating temperature) -5 0- nS Rise Time tr - 155 - Turn Off Delay Time td(off) - 270 - Fall Time tf - 125 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=14.6A, VDS=0.8BVDSS (MOSFET switching time are essentially independent of operating temperature) -9 0 1 1 7 nCGate-Source Charge Qgs - 15 - Gate-Drain (Miller) Charge Qgd - 45 -

Electrical Characteristics (Control Part) (Ta=25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC - 1 82 02 2 k H z Voltage Stability F STABLE 12V ≤ VCC ≤ 23V 0 1 3% Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa≤ 85°C0 ±5 ±10 % Maximum Duty Cycle D MAX - 9 29 59 8% Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback Source Current I FB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD VFB ≥ 6.9V 6.9 7.5 8.1 V Shutdown Delay Current I DELAY VFB= 5 V 456 µA SYNC. SECTION Normal Sync High Threshold Voltage V NSH VCC=16V, Vfb=5V 4.0 4.6 5.2 V Normal Sync Low Threshold Voltage V NSL VCC=16V, Vfb=5V 2.3 2.6 2.9 V Burst Sync High Threshold Voltage V BSH VCC=10.5V, Vfb=0V 3.2 3.6 4.0 V Burst Sync Low Threshold Voltage V BSL VCC=10.5V, Vfb=0V 1.1 1.3 1.5 V BURST MODE SECTION Burst Mode Low Threshold Voltage V BURL VFB=0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage V BURH VFB=0V 11.4 12.0 12.6 V Burst Mode Enable Feedback Voltage V BEN VCC=10.5V 0.7 1.0 1.3 V Burst Mode Peak Current Limit(Note4) I BURPK VCC=10.5V , VFB=0V 0.65 0.85 1.1 A CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) I OVER KA5Q0765RT 4.40 5.00 5.60 AKA5Q12656RT 5.28 6.00 6.72 KA5Q1265RF 7.04 8.00 8.96 KA5Q1565RF 10.12 11.50 12.88 PROTECTION SECTION Over Voltage Protection V OVP VSYNC ≥ 11V 11 12 13 V Over Current Latch voltage(Note3) V OCL - 0.9 1.0 1.1 V Thermal Shutdown Tempature(Note2) TSD - 140 160 - °C

Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. Parameter Symbol Conditions Min. Typ. Max. Unit TOTAL DEVICE SECTION Start Up Current I START VFB=GND, VCC=14V - 0.1 0.2 mA Operating Supply Current(Note1) IOP VFB=GND, VCC=16V -1 0 1 8 m AIOP(MIN) VFB=GND, VCC=12V IOP(MAX) VFB=GND, VCC=28V PRIMARY SIDE REGULATION SECTION (ONLY KA5Q0765RT/KA5Q12656RT) Primary Regulation Threshold Voltage V PR IFB=700uA, VFB=4V 32.0 32.5 33.0 V Primary Regulation Transconductance G PR - 2.0 2.6 - mA/V

Package Dimensions (Continued) TO-220F-5L(Forming)

Package Dimensions (Continued) TO-3PF-5L

Package Dimensions (Continued) TO-3PF-5L(Forming)

8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Rating I OVER KA5Q0765RTTU TO-220F-5L 650V, 7A 5AKA5Q0765RTYDTU TO-220F-5L (Forming) KA5Q12656RTTU TO-220F-5L 650V,12A 6AKA5Q12656RTYDTU TO-220F-5L (Forming) KA5Q1265RFTU TO-3PF-5L 650V,12A 8A KA5Q1265RFYDTU TO-3PF-5L (Forming) KA5Q1565RFTU TO-3PF-5L 650V,15A 11.5A KA5Q1565RFYDTU TO-3PF-5L (Forming)