4T08A-A

4T06A-CW NELLSEMI | Alldatasheet

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www.nellsemi.com Page 1 of 7 SEMICONDUCTOR 4T Series RoHS RoHS

DESCRIPTION

T he 4T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the 4T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref. :E320098) GA2 TRIACs, 4A Snubberless, and Standard Logic Level 1 2 3 1 2 3 TO-220AB (lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) (4TxxF) (4TxxG) (4TxxAI) TO-220AB (non-Insulated) (4TxxA) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 4 A V mA5 to 50 600 to 1000 SYMBOL IT(RMS)RMS on-state current (full sine wave) 4 TO-251/TO-252/TO-220AB ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 6 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated T = 105ºCc T = 100ºCc ITO-220AB (4TxxAF)

www.nellsemi.com Page 2 of 7 I - II - III IV MAX. 10 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. R (2)D MAX. IDRM IRRM V = VD DRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. QUADRANT 4Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 200 mAT I = 1.2 IG GT V = 67% V , gate open, T = 125°CD DRM j (dI/dt)c = 1.7 A/ms, T = 125°Cj 1.3 0.2 V V mA V/µs Dynamic resistance T = 125°Cj T = 25°Cj T = 125°Cj 100 µA STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c SEMICONDUCTOR 4T Series RoHS RoHS S (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS 4Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms IL MAX. MIN. V = 12 V, R = 30ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 200 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 1.8 0.9 1.3 0.2 2.7 2.0 mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL TW SW 400 2.5 CW SNUBBERLESS and Logic level (3 quadrants) T 0.5 D A VR = VRRM 1 5 STATIC CHARACTERISTICS UNITVALUETEST CONDITIONS SYMBOL V (2)TO MAX.Threshold voltage T = 125°Cj 0.85 V V (2)TM MAX.I = 5.5 A, TM t = 380 µsP T = 25°Cj 1.55 mΩ MIN.

www.nellsemi.com Page 3 of 7 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 35 mA 10 mA 10 mA 10 mA 5 mA 1000 V 4TxxA-CW/4TxxAl-CW 4TxxA-S/4TxxAl-S 4TxxA-A/4TxxAl-A 4TxxA-SW/4TxxAl-SW 4TxxA-T/4TxxAI-T TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Logic level Logic level V VV V VV VV VV SEMICONDUCTOR 4T Series RoHS RoHS 800 V V V V V V 5 mA 5 mA 4TxxA-D/4TxxAl-D 4TxxA-TW/4TxxAI-TW TO-220AB TO-220AB VV VV V V THERMAL RESISTANCE UNITVALUESYMBOL TO-220AB,TO-251, TO-252 2.6Rth(j-c) Junction to case (AC) °C/W4.0TO-220AB Insulated 70 TO-2522S = 0.5 cm °C/WRth(j-a) Junction to ambient TO-220AB Insulated, TO-220AB, ITO-220AB 60 TO-251 100 S = Copper surface under tab. Standard Standard 35 mA 35 mA 10 mA 10 mA 4TxxF-CW 4TxxG-CW 4TxxF-SW 4TxxG-SW Logic level Logic level VV VV VV VV V V V V 5 mA 5 mA VV VV V V 4TxxF-TW 4TxxG-TW Snubberless Snubberless Logic level Logic level I-PAK D-PAK I-PAK D-PAK I-PAK D-PAK 5 /5/10/10 mA VV VV V V 4TxxF-T/D/S/A I-PAK D-PAK4TxxG-T/D/S/A 5 /5/10/10 mA Standard Standard

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 4TxxAI-yy 4TxxAI-yy 2.3g 50 Tube 4TxxF-yy 4TxxF-yy TO-251(I-PAK) 0.40g 80 4TxxG-yy 4TxxG-yy 0.38g 80 Tube Note: xx = voltage, yy = sensitivity TO-252(D-PAK) TO-220AB (insulated) Tube , ITO-220AB 35 mA4TxxAF-CW Logic level VV V 10 mA 5 mA VV VV V V 4TxxAF-SW 4TxxAF-TW Snubberless Logic level ISOWAT TO-220AB 10 mA VV VV V V 4TxxAF-D 4TxxAF-A 5 mA Standard Standard ISOWAT TO-220AB ISOWAT TO-220AB ISOWAT TO-220AB ISOWAT TO-220AB 4TxxAF-yy 4TxxAF-yy 2.5g 50 TubeISOWAT TO-220AB

www.nellsemi.com Page4 of 7 ORDERING INFORMATION SCHEME Triac series Current Voltage 4 = 4A 06 = 600V 08 = 800V T = 5mA Standard D = 5mA Standard SW = 10mA Logic Level

4 T 06 A - CW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) SEMICONDUCTOR 4T Series RoHS RoHS AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) I Sensitivity GT S = 10mA Standard TW = 5mA Logic Level A = 10mA Standard Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) I (A)T(RMS) 125100755025 Fig.3 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration. 0.0 1E-2 1E-1 1E+0 K=[Z /R ]th th 5E+21E+21E+11E+01E-11E-20 25 50 75 100 125 I (A)T(RMS) I (A)T(RMS) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 T (°C)C ITO-220AB ( )TO-220AB insulated DPAK 2(S=0.5cm ) T (°C)c0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Rth(j-a) TO-220AB / DPAK / IPAK DPAK / IPAK ISOWATT220AB TO-220AB / TO-220AB (insulated) Rth(j-c) t (s)p CW = 35mA Snubberless

www.nellsemi.com Page 5 of 7 SEMICONDUCTOR 4T Series RoHS RoHS 100 ITM (A) ITSM (A) Fig.5 On-state characteristics (maximum values). Fig.6 Surge peak on-state current versus number of cycles. 0 1 102 93 8765 1 100 1000 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT IH & IL Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig.10 Relative variation of critical rate of of main current versus junction temperature decrease Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2lTSM (A), l t(A s) l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 VTM(V) T =25°Cj T =125°Cj T max. :j Vto = 0.85 V Rd = 100 mW Number of cycles t=20msNon repetitive T initial=25°Cj Repetitive T =100°Cc One cycle 10 100 1000 dI/dt limitation: 50A/µs T initial=25°Cj ITSM 2I t tp(ms) T (°C)j 0.01 0.10 1.00 10.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dV/dt)c (V/µs) D S T A T (°C)j 0 25 50 75 100 125 Fig.11 DPAK thermal resistance junction to ambient versus copper surface under tab (priented circuit board Fr4, copper thickness:35 µm) 100 0 4 8 12 16 20 24 28 32 36 40 Rth(j-a)°(C/W) (dl/dt)c [T ] / (dl/dt)c [T specified]j j 2S(cm )

SEMICONDUCTOR 4T Series RoHS RoHS www.nellsemi.com Page 6 of 7 6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) 1 2 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-251 (I-PAK) TO-252 (D-PAK) Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB

SEMICONDUCTOR 4T Series RoHS RoHS www.nellsemi.com Page 7 of 7 Case Style ITO-220AB 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1