FMMT497_06 ZETEX | Alldatasheet
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Issue 4 - November 2006 1 www.zetex.com © Zetex Semiconductors plc 2006 FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 Device marking - 497 Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage V CBO 300 V Collector-emitter voltage V CEO 300 V Emitter-base voltage V EBO 5V Continuous collector current I C 500 mA Peak pulse current I CM 1A Base current I B 200 mA Power dissipation at Tamb=25°C P tot 500 mW Operating and storage temperature range T j:Tstg -55 to +150 °C C E B C E B Pinout - top view
Issue 4 - November 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max Unit Conditions Collector-base breakdown voltage V(BR)CBO 300 V I C = 100/H9262A Collector-emitter breakdown voltage VCEO(sus) 300 V IC = 10mA (*) NOTES: (*) Measured under pulsed conditions. Pulse width = 300/H9262s. Duty cycle /H113492%. Emitter-base breakdown voltage V(BR)EBO 5V I E = 100/H9262A Collector cut-off current I CBO 100 nA V CB = 250V Collector cut-off current I CES 100 nA V CES = 250V Emitter cut-off current I EBO 100 nA V EB = 4V Collector-emitter saturation voltage VCE(sat) 0.2 0.3 V V IC = 100mA, IB = 10mA IC = 250mA, IB = 25mA Base-emitter saturation voltage VBE(sat) 1.0 V I C = 250mA, IB = 25mA Base-emitter turn on voltage VBE(on) 1.0 V I C = 250mA, VCE = 10V Static forward current transfer ratio hFE 100 300 I C = 1mA, VCE = 10V IC = 100mA, VCE = 10V(*) IC = 250mA, VCE = 10V(*) Transition frequency f T 75 MHz I C = 50mA, VCE = 10V f = 100MHz output capacitance C obo 5p F V CB = 10V, f = 1MHz Switching performance td 53 ns V CC = 100V, IC = 100mA, Ib1 = -Ib2 = 10mAtr 126 ns ts 2.58 /H9262s tf 228 ns
Issue 4 - November 2006 3 www.zetex.com © Zetex Semiconductors plc 2006 Typical characteristics VCE(sat) -(V) 1A10mA 100mA1mA -55 °C +25 °C +100 °C IC/IB=10 VCE(sat) v IC IC-Collector Current IC-Collector Current VBE(sat) v IC VBE(sat) - (V) 0.2 100mA10mA 0.4 0.6 0.8 hFE V IC IC-Collector Current 1mA 100mA10mA 1A hFE - Typical Gain 100 300 200 400 10mA 1mA IC-Collector Current VBE(on) v IC 100mA 1A VBE(on) - (V) IC-Collector Current VCE(sat) v IC VCE(sat)-(V) 1mA 0.1 100mA10mA +25 ° C 0.2 0.3 0.4 IC/IB=10 +100 °C -55 °C +25 °C +100 °C -55 °C +25 °C -55 °C +25 °C +100 °C IC/IB=10VCE=10V VCE=10V IC -Collector Current (A) 0.1 Safe Operating Area VCE - Collector Emitter Voltage (V) 0.1 10 100 DC 100ms 10ms 100µs 1ms 1mA 0.01 IC/IB=50 0.5 0.6 0.1 0.2 0.3 0.4 0.5 0.6 0.9 0.2 0.4 0.6 0.8 0.9 1000 0.001
Issue 4 - November 2006 4 www.zetex.com © Zetex Semiconductors plc 2006 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Dim. Millimeters Inches Dim. Millimeters Inches A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM e 0.95 NOM 0.0375 NOM - - - - - E e L D A c E1L1 b 3 leads
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Issue 4 - November 2006 6 www.zetex.com © Zetex Semiconductors plc 2006 Zetex sales offices Europe Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
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