VUO98-12NO7 LITTELFUSE | Alldatasheet

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Technical content

3~ Rectifier Bridge Standard Rectifier Module Part number VUO98-12NO7 Features / Advantages: Applications: Package:

  • Package with DCB ceramic
  • Improved temperature and power cycling
  • Planar passivated chips
  • Very low forward voltage drop
  • Very low leakage current
  • Diode for main rectification
  • For three phase bridge configurations
  • Supplies for DC power equipment
  • Input rectifiers for PWM inverter
  • Battery DC power supplies
  • Field supply for DC motors ECO-PAC2
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Height: 9 mm
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 Information furnished is believed to be accurate an d reliable. However, users should independently evaluate the suitability of and test each product s elected for their own applications. Littelfuse prod ucts are not designed for, and may not be used in, all applications. Read comp lete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer-electronics. RRM 1200 I 105 FSM 750 DAV V = V A A Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20191220b Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. IR V I A VF 1.14 R 0.7 K/W R min. 105 VRSM V

100 T = 25°C VJ

T = °C VJ mA 1.5 V = V R T = 25°C VJ I = A F V T = °C C 115 Ptot 175 WT = 25°C C R K/W 0.3 1200 max. non-repetitive reverse blocking voltage reverse current forward voltage drop total power dissipation Conditions Unit 1.48 T = 25°C VJ 150 VF0 V0.81 T = °C VJ 150 rF 5.9 mΩ V1.06 T = °C VJ I = A F V 1.51 I = A F 120 I = A F 120 threshold voltage slope resistance for power loss calculation only µA 125 VRRM V1200 max. repetitive reverse blocking voltage T = 25°C VJ CJ 11 junction capacitance V = V; 400 T = 25°C f = 1 MHz R VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R T = °C VJ 150 750 810 2.05 1.98 A A A A 640 690 2.82 2.73 1200 DAV d = rectangular ⅓ bridge output current thermal resistance junction to case thJC thermal resistance case to heatsink thCH Rectifier 1300 IXYS reserves the right to change limits, condition s and dimensions. 20191220b Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

Part Number Date Code/Location Logo Lot# 123456 Package Top °C MD Nm 2mounting torque 1.4 TVJ °C 150 virtual junction temperature -40 Weight g24 Symbol Definition typ. max. min. Conditions operation temperature Unit V Vt = 1 second Vt = 1 minute isolation voltage mm mm 6.0 10.0 dSpp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 100 Aper terminal 125 -40 terminal to terminal ECO-PAC2 Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL VUO98-12NO7 494496 Box 25 VUO98-12NO7 Standard

3000 ISOL

Tstg °C 125 storage temperature -40 2500 threshold voltage V0.81 mΩ V0 max R0 max slope resistance * 4.6 Equivalent Circuits for Simulation T = VJ I V0 R0 Rectifier °C * on die level 150 IXYS reserves the right to change limits, condition s and dimensions. 20191220b Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

1.55 ±0.2 10.95 ±0.2 3.3 ±0.2 5.7 ±0.2 34.3 ±0.2 15.8 ±0.2 1.55 ±0.2 1.55 ±0.2 9.4 ±0.2 3.3 ±0.2 12 ±0.2 31.6 ±0.1 25 ±0.2 1.5 8.3 51 ±0.2 20.3 ±0.2 35.7° 45° Ø 4.3 ±0.2 B D F H J M O R T W A C E G I K L N P S V X 2x M4 EG1 K10 D1 D3 D5 D2 D4 D6 PS18 Outlines ECO-PAC2 IXYS reserves the right to change limits, condition s and dimensions. 20191220b Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved

VF [V] IF [A] 120 160 10-3 10-2 10 -1 10 0 200 300 400 500 600 700 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 1500 10 20 30 40 0 25 50 75 100 125 150 100 120 140 IFSM [A] t [s] t [ms] I2t [A2s] Ptot [W] IdAVM [A] TA [°C] IF(AV)M [A] TC [°C] ZthJC [K/W] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode case temperature Fig. 6 Transient thermal impedance junction to case Constants for ZthJC calculation: i R th (K/W) t i (s) 1 0.09 0.012 2 0.05 0.007 3 0.32 0.036 4 0.24 0.102 0.8 x V RRM 50 Hz TVJ = 25°C TVJ = 45°C TVJ = 45°C VR = 0 V RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 0.5 0.4 0.33 0.17 0.08 DC = 0.5 0.4 0.33 0.17 0.08 TVJ = 150°C TVJ = 150°C TVJ = 125°C 150°C Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20191220b Data according to IEC 60747and per semiconductor un less otherwise specified © 2019 IXYS all rights reserved