STW48N60M2-4 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.2 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO247-4 package information
- 5 Revision history
Features
Order code VDS @ TJmax. RDS(on)max. ID STW48N60M2-4 650 V 0.07 Ω 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected
Applications
High efficiency switching applications: Servers PV inverters Telecom infrastructure Multi kW battery chargers
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STW48N60M2-4 48N60M2 TO247-4 Tube
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 42 A ID Drain current (continuous) at TC = 100 °C 26 A IDM (1) Drain current (pulsed) 168 A PTOT Total dissipation at TC = 25 °C 300 W IAR Max. current during repetitive or single pulse avalanche (pulse width limited by Tjmax.) 7 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1 J dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Tstg Storage temperature range - 55 to 150 Tj Operating junction temperature range °C Notes: (1)Pulse width limited by safe operating area. (2)ISD ≤ 42 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V (3)VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 0.42 °C/W Rthj-amb Thermal resistance junction-ambient max. 50 °C/W
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4: On /off-states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero-gate voltage drain current (VGS = 0) VDS = 600 V 1 µA VDS = 600 V, TC = 125 °C(1) 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±10 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 21 A 0.06 0.07 Ω Notes: (1)Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 3060 - pF Coss Output capacitance - 143 - pF Crss Reverse transfer capacitance - 4.3 - pF Coss eq.(1) Equivalent Output Capacitance VGS = 0, VDS = 0 to 480 V - 630 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 4.6 - Ω Qg Total gate charge VDD = 480 V, ID = 42 A, VGS = 10 V See Figure 15: "Gate charge test circuit" - 70 - nC Qgs Gate-source charge - 10.5 - nC Qgd Gate-drain charge - 31 - nC Notes: (1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 21 A, RG = 4.7 Ω, VGS = 10 V See Figure 14: "Switching times test circuit for resistive load" and Figure 19: "Switching time waveform" - 18.5 - ns tr Rise time - 17 - ns td(off) Turn-off-delay time - 13 - ns tf Fall time - 119 - ns
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 42 A ISDM(1) Source-drain current (pulsed) 168 A VSD(2) Forward on voltage ISD = 21 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 42 A, di/dt = 100 A/µs VDD = 60 V See Figure 16: " Test circuit for inductive load switching and diode recovery times" - 487 ns Qrr Reverse recovery charge - 9.1 µC IRRM Reverse recovery current - 37.5 A trr Reverse recovery time ISD = 42 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C See Figure 16: " Test circuit for inductive load switching and diode recovery times" - 605 ns Qrr Reverse recovery charge - 12.5 µC IRRM Reverse recovery current - 41.5 A Notes: (1)Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
Test circuits STW48N60M2-4
3 Test circuits
Figure 14: Switching times test circuit for resistive load Figure 15: Gate charge test circuit Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform Figure 19: Switching time waveform VGS PW VD RG RL D.U.T. 2200 µF 3.3 µF VDD GND2 (power) GND1 (driver signal) A D D.U.T. S B G 25Ω A A B B RG G FAST DIODE D S L=100µH µF 3.3 1000 µF VDD GND1 GND2 D.U.T. AM15858v1 Vi Pw VD ID D.U.T. L 2200 µF 3.3 µF VDD GND1 GND2
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO247-4 package information
Figure 20: TO247-4 package outline
Table 8: TO247-4 mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.29 b1 1.15 1.20 1.25 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 7.40 P2 2.40 2.50 2.60 Q 5.60 6.00 S 6.15 T 9.80 10.20 U 6.00 6.40
5 Revision history
Table 9: Document revision history Date Revision Changes 25-Jul-2014 1 Initial release. 30-Jan-2015 2 Added section Electrical characteristics (curves). 20-Jan-2017 3 Updated Table 2: "Absolute maximum ratings", Table 4: "On /off-states", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source- drain diode". Updated Section 2.2: "Electrical characteristics (curves)".