MRF6V2300N_10 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large- -Signal Impedance Parameters
  • Qualified Up to a Maximum of 50 V DD Operation
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - - AN1955. Figure 1. Pin Connections the source terminal for the transistor. © Freescale Semiconductor, Inc., 2007- -2008, 2010.All rights reserved.

Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5°C unless otherwise noted) ensure proper mounting of these devices.

Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic — 220 MHz Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values — 220 MHz

Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout — 220 MHz

Figure 14. MTTF versus Junction Temperature is operated at VDD =5 0V d c ,Pout = 300 W CW, andηD = 68%.

Figure 15. Series Equivalent Source and Load Impedance — 220 MHz

Figure 16. MRF6V2300NR1(NBR1) TestCircuit Component Layout — 27 MHzCUT OUT AREA

27 MHz

Table 7. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values — 27 MHz

  • Leaded components mounted over traces.

** Resistor is mounted at center of inductor coil.

Figure 17. MRF6V2300NR1(NBR1) Test Circuit Component Layout — 450 MHz

450 MHz

Table 8. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz

Figure 18. Series Equivalent Source and Load Impedance — 27, 450 MHz

MRF6V2300NR1 MRF6V2300NBR1 PACKAGE DIMENSIONS

MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor

MRF6V2300NR1 MRF6V2300NBR1

MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor

MRF6V2300NR1 MRF6V2300NBR1

MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor

MRF6V2300NR1 MRF6V2300NBR1 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes

  • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers
  • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2007 • Initial Release of Data Sheet 1 Feb. 2007 • Added Fig. 1, Pin Connections, p. 1

  • Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
  • Added Max value to Power Gain, Table 5, Functional Tests, p. 2 2 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C19, C5, C18, C9, C12, C14, and C23, p. 3 3 Jan. 2008 • Increased operating frequency to 600 MHz, p. 1
  • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
  • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2
  • Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
  • Replaced Case Outline 1486- -03, Issue C, with 1486- -03, Issue D, p. 9- -11. Added pin numbers 1 through 4 on Sheet 1.
  • Replaced Case Outline 1484- -04, Issue D, with 1484- -04, Issue E, p. 12- -14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 andPin 2 designations. 4 Dec. 2008 • Added Typical Performances table for 27 MHz, 450 MHz applications, p. 2
  • Added Figs. 16 and 17, Test Circuit Component Layout - - 27 MHz and 450 MHz, and Tables 7 and 8, Test Circuit Component Designations and Values - - 27 MHz and 450 MHz, p. 9, 10
  • Added Fig. 18, Series Equivalent Source and Load Impedance for 27 MHz, 450 MHz, p. 11 5 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1
  • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 18

MRF6V2300NR1 MRF6V2300NBR1 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007- -2008, 2010. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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