4601DQ YEASHIN | Alldatasheet

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http://www.yeashin.com 1 REV.02 20120705 4601DQ Tr1 MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage V CEO 50 V Collector-Base Voltage V CBO 60 V Emitter-Base Voltage V EBO Collector current-continuoun IC 150 mAdc Tr2 MAXIMUM RATINGS Symbol Ratings Unit Collector-Emitter Voltage V CEO -50 V Collector-Base Voltage V CBO -60 V Emitter-Base Voltage V EBO -6 V Collector current-continuoun IC -150 mAdc THERMAL CHARATEERISTICS Symbol Max Unit Total Device Dissipation FR-5 Board, (1) P D 380 mW Thermal Resistance, Junction to Ambient R JA 328 o C W Junction and Storage Temperature Tj ,Tstg -55 to +150 o C DEVICE MARKING Characteristic Parameter T A =25 o C Parameter Silicon NPN Epitaxial Planer Transistor (Tr1) Silicon PNP Epitaxial Planer Transistor (Tr2) V 4601DQ =50 Pb-Free package is available SC-88/SOT-363 QRS hFE 120-270 180-390 270-56 0 H

http://www.yeashin.com 2 REV.02 20120705 4601DQ DEVICE CHARACTERISTICS Tr1 ELECTRICAL CHARACTERISTICS (T A =25 o C unless otherwise noted) Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - V (IC=1mA) Emitter-Base Breakdown Voltage V(BR)EBO 6 - - V (IE=50 Collector-Base Breakdown Voltage V(BR)CBO 60 - - V (IC=50 Collector Cutoff Current (VCB=60V) ICBO - - 0.1 A EMITTER CUTOFF CURRENT IEBO - - 0.1 A VEB=7V ON CHARACTERISTICS DC Current Gain Hfe 120 - 560 (IC=1mA, VCE=6.0V) Collector-Emitter Saturation Voltage (IC=50mA,IB=5mA) VCE(SAT) - - 0.4 V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Ft - 180 - MHz (VCE = 12.0V; IE =-2.0 mA,f=100MHZ) Output Capacitance(VCE=12V,f=1.0MHz) Cobo - 2 3.5 Pf Tr2 ELECTRICAL CHARACTERISTICS (T A =25 o C unless otherwise noted) Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO -50 - - V (IC=-1mA) Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V (IE=-50 Collector-Base Breakdown Voltage V(BR)CBO -60 - - V (IC=-50 Collector Cutoff Current (VCB=-60V) ICBO - - -0.1 A Emitter Cutoff Current (VBE=-6V) IEBO -0.1 A Characteristic Characteristic ON CHARACTERISTICS DC Current Gain Hfe 120 - 560 (IC=-1mA, VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-50mA,IB=-5mA) VCE(SAT) - - -0.5 V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Ft - 140 - MHz (VCE = -12.0V; IE =2.0 mA,f=300MHZ) Output Capacitance(VCB=-12V,f=1.0MHz) Cobo - 4 5 Pf

http://www.yeashin.com 3 REV.02 20120705 4601DQ PACKAGE OUTLINE & DIMENSIONS PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026BSC 0.65BSC J 0.004 0.010 0.10 0.25 K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 V 0.012 0.016 0.30 0.40 SC 88/SOT 363