45N10 VBSEMI | Alldatasheet
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Technical content
N-Channel 100-V (D-S) MOSFET
FEATURES
TrenchFET® Power• MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % R g Tested
APPLICATIONS
I solated DC/DC Converters PRODUCT SUMMARY rDS(on) (Ω)I D (AV(BR)DSS (V) ) 0.017 at VGS = 10100 V 30 N-Channel MOSFET G D S RoHS COMPLIANT 45N10-VB www.VBsemi.com Top View PIN1 DFN5X6 Top View Bottom View Notes a. Package limited b. Surface mounted on 1" x 1" FR4 board c. t = 10 s ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage 10VDS 0 VGate-source voltage VGS ± 20 TC = Continuous drain current (TJ = 150 °C) 25 °C ID TC A = 70 °C 19 TA = 25 °C 10 b, c = 70 °C 8.5TA b, c IPulsed drain current (t = 100 μs) DM 75 TC =Continuous source-drain diode current 25 °C IS
4.5 TA = 25 °C b, c
Single pulse avalanche current IL = 0.1 mH AS 20 Single pulse avalanche energy EAS 20 mJ TC = Maximum power dissipation 25 °C PD TC = W 70 °C 40
5 TA = 25 °C b, c
3.2 TA = 70 °C b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °CSoldering recommendations (peak temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t Maximum junction-to-ambient b 10 s RthJA 20 25 °C/WMaximum junction-to-case (drain) 1.Steady state R thJC 6 2 g
a. Pulse test; pulse width 300 μs, duty cycle 2 % b. Guaranteed by design, not su bject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS 10VGS = 0 V, ID = 250 μA 0 - - V VDS/TVDS temperature coefficient J ID = 10 mA - 81 - mV/°CVGS(th)/TVGS(th) temperature coefficient J ID = 250 μA - -7.5 - Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-source leakage VDS = 0 V, VGS IGSS = ± 20 V - - 100 nA Zero gate voltage drain current VDS = 100 V, VGS IDSS = 0 V - - 1 μAVDS = 100 V, VGS = 0 V, TJ = 70 °C - - 15 On-state drain current a VDS 10 V, VGSID(on) =10 V 40 - - A Drain-source on-state resistance a VGS =10 V, ID RDS(on) = 10 A - 0.0170 - VGS = 7.5 V, ID = 10 A - 0.0200 - Forward transconductance a VDS = 15 V, IDgfs = 10 A - 46 - S Dynamic b Input capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz - 1470 - pFOutput capacitance Coss - 132 - Reverse transfer capacitance Crss - 11.2 - Total gate charge VDS = 50 V, VGS = 10 V, IDQg = 10 A - 20 VDS = 50 V, VGS = 7.5 V, ID nC = 10 A - 15 - Gate-source charge -6 .Qgs 4 5- Gate-drain charge -3 .Qgd 5- Output charge Qoss VDS = 50 V, VGS = 0 V - 22 - Gate resistance f = 1Rg MHz 0.2 0.76 1.4 Turn-on delay time td(on) -1 VDD = 50 V, RL = 5 , ID 10 A, VGEN = 10 V, Rg = 1 2 2 4 ns Rise time 1tr -5 0 Turn-off delay time td(off) -1 9 3 8 Fall time tf -5 1 0 Turn-on delay time td(on) -1 VDD = 50 V, RL = 5 , ID 10 A, VGEN = 7.5 V, Rg = 1 5 3 0 Rise time 1tr -6 2 Turn-off delay time td(off) -1 9 3 8 Fall time tf -5 10 Drain-Source Body Diode Characteristics TC = 25Continuous source-drain diode current I S °C - - 56.8 APulse diode forward current ISM -- 8 0 Body diode voltage IS = 5 A, VGSVSD = 0 V - 0.78 1.1 V Body diode reverse recovery time trr -4 IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C 3 8 6 n s Body diode reverse recovery charge Qrr - 72 144 nC Reverse recovery fall time ta -3 3 - nsReverse recovery rise time tb -1 0 - 45N10-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 02468 2nd line ID - 1 0 Drain Current (A) VDS - Drain-to-Source Voltage (V) 2nd line VGS = 10 V thru 6 V VGS = 4 V VGS = 5 V 000 0.014 0.016 0.018 0.020 0.022 0.024 Ax 0 1 63 24 86 48 0 is Title 1st line 2nd l 2nd line ine RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 2nd line VGS = 10 V VGS = 7.5 V 1000 10000 1st li 0 4.2 8.4 12.6 16.8 21 Axis Title ne 2nd line 2nd line VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) 2nd line VDS = 25 V, 50 V, 75 V ID = 10 A 02468 1 0 2nd line VGS - ID - Drain Current (A) Gate-to-Source Voltage (V) 2nd line TC = 25 °C TC =- 5 5 ° CTC = 125 °C 1000 10000 400 800 1200 1600 2000 0 2 04 06 08 0 1 0 0 Axis Title 1st line 2nd line 2nd line C - Capacitance (pF) VDS - Drain-to-Source Voltage (V) 2nd line Crss Coss Ciss 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 2nd line ID = 10 A VGS = 7.5 V VGS = 10 V 45N10-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltag On-Resistance vs. Gate-to-Source Voltage e Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 10000 0.01 0.1 100 Axis Title 1st line 2nd line 2nd line - SIS ource Current (A) VSD - Source-to-Drain Voltage (V) 2nd line TJ = 150 °C TJ = 25 °C 10000 0.02 0.04 0.06 0.08 0.10 2468 1 0 Axis Title 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 2nd line TJ = 25 °C ID = 10 A TJ = 150 °C 10000 -1.4 -1.0 -0.6 -0.2 0.2 0.6 Axis Title 1st line 2nd line 2nd line -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) VGS(th) - Variance (V) 2nd line ID = 250 μA ID = 5 mA 10000 100 200 300 400 500 0.001 0.01 0.1 1 10 Axis Title 1st line 2nd line 2nd line Power (W) Time (s) 2nd line 1000 010 0.001 2nd line ID - D 1st line 2nd li Axis Tit 0.01 le ne rain Current (A) 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified IDM limited Limited by RDS(on) (1) TA = 25 °C Single pulse BVDSS limited 100 ms 10 ms 1 ms 100 μs 10 s DC 1 s ID limited 45N10-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Current Derating a Power, Junction-to-Case Power, Junction-to-Ambient Note a. The power dissipation P D is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the cu rrent rating, when this rating falls below the package limit 1000 1000 Axis 02 5 Title 5 0 7 5 1 0 0 1 2 5 1 5 0 TC - C 2nd line ID - D 1st line 2nd line rain Current (A) ase Temperature (°C) 2nd line 10000 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Power (W) TC - Case Temperature (°C) 2nd line 100 10000 0.5 1.5 2.5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Axis Title 1st line 2nd line 2nd line Power (W) TA - Ambient Temperature (°C) 2nd line 45N10-VB www.VBsemi.com g
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case 10000 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Axis Title 1st line 2nd line Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 PDM 1. Duty cycle, D = 2. Per unit base = RthJA = 70 °C/W 3. TJM -T A = PDMZthJA (t) 4. Surface mounted Notes: 1000 0.01 0.0001 0.001 0.01 0.1 1 Axis Tit le Normal 1st line 2nd line ized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) 2nd line 0.1 0.05 0.02 Single pulse Duty Cycle = 0.5 0.2 45N10-VB www.VBsemi.com g
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