45MT160P IRF | Alldatasheet

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High thermal conductivity package, electrically insulated case 4000 V RMS isolating voltage Parameters 45MT160P Units

Bulletin I27600 rev. C 11/00 IO Maximum DC output current 40 (36) A 120° Rect conduction angle @ Case temperature 78 (85) °C ITSM Maximum peak, one-cycle 390 A t = 10ms No voltage forward, non-repetitive 410 t = 8.3ms reapplied on state surge current 330 t = 10ms 100% V RRM 345 t = 8.3ms reapplied Initial I2t Maximum I 2t for fusing 770 A 2s t = 10ms No voltage T J = TJ max. 700 t = 8.3ms reapplied 540 t = 10ms 100% V RRM 500 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 7700 A 2√s t = 0.1 to 10ms, no voltage reapplied VT(TO) Value of threshold voltage 0.98 V @ T J max. rt Low level value on-state 11 m Ω VTM Maximum on-state voltage drop 1.33 V I pk = 30A, TJ = 25°C tp = 400µs single junction di/dt Maximum non-repetitive rate 150 A/µs T J = 25oC, from 0.67 VDRM, ITM = π x IT(AV), of rise of turned on current I g = 500mA, tr < 0.5 µs, tp > 6 µs IH Maximum Holding Current 200 mA T J = 25oC, anode supply = 6V, resistive load, gate open circuit IL Maximum Latching Current 400 T J = 25oC, anode supply = 6V, resistive load Forward Conduction VINS RMS isolation voltage 4000 V T J = 25oC all terminal shorted f = 50Hz, t = 1s dv/dt Max. critical rate of rise 1000 V/µs T J = TJ max., linear to 0.67 VDRM, of off-state voltage gate open circuit Blocking Voltage V RRM, maximum V RSM, maximum V DRM, max. repetitive I RRM/IDRM max. Type number Code repetitive peak non-repetitive peak peak off-state voltage @ TJ = TJ max. reverse voltage reverse voltage gate open circuit VV V m A 45MT160P 160 1600 1700 1600 15 ELECTRICAL SPECIFICATIONS Voltage Ratings Parameter 45MT160P Units Conditions Parameter 45MT160P Units Conditions

Bulletin I27600 rev. C 11/00 Triggering PGM Max. peak gate power 10 W T J = TJ max. PG(AV) Max. average gate power 2.5 IGM Max. peak gate current 2.5 A -VGT Max. peak negative gate voltage 10 V VGT Max. required DC gate 4.0 V T J = - 40°C voltage to trigger 2.5 T J = 25°C Anode supply = 6V, resistive load 1.7 T J = TJ max. IGT Max. required DC gate 270 T J = - 40°C current to trigger 150 mA T J = 25°C Anode supply = 6V, resistive load 80 T J = TJ max. VGD Max. gate voltage 0.25 V @ T J = TJ max., rated VDRM applied that will not trigger IGD Max. gate current 6 mA that will not trigger Thermal and Mechanical Specifications TJ Maximum junction operating - 40 to 125 °C for diodes temperature range - 40 to 100 for Scr Tstg Maximum storage temperature -40 to 150 °C range RthJC Maximum thermal resistance, 0.32 K/W DC operat ion per module junction to case 1.9 DC operation per junction 0.4 120° Rect condunction angle per module 2.42 120° Rect condunction angle per junction RthCS Maximum thermal resistance, 0.1 K/W Per module case to heatsink Mounting surface smooth, flat an greased T Mounting torque ± 10% 4 Nm to heatsink wt Approximate weight 60 g A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. Parameter 45MT160P Units Conditions Parameter 45MT160P Units Conditions ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when device operate at different conduction angles than DC) Sinusoidal conduction @ TJ max. Rectangular conduction @ T J max. Device Units180o 120o 90o 60o 30o 180o 120o 90o 60o 30o

Bulletin I27600 rev. C 11/00 1 2 3 1 - Current rating code: 4 = 40 A (Avg) 2 - Circuit configuration code 3 - Essential part number 4 - Voltage code: Code x 10 = V RRM (See Voltage Ratings Table) Device Code Ordering Information Table 4 5 MT 160 P Outline Table All dimensions are in millimeters 1 23 4 57 8

Bulletin I27600 rev. C 11/00 02 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 Maximum Allowable Ambient Temperature ( C)

10 K/W

5 K /W

3 K/W

2 K/W

1.5 K/W

1 K/W

R = 0.7 K/W - Delta R thSA 100 1000 02468 1 0 1 2 T = 25 CJ Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) T = 125 CJ 160 180 200 220 240 260 280 300 320 340 360 11 0 1 0 0 Num ber O f Equa l Am plitude Ha lf Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) Per Junction Initial T = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 160 180 200 220 240 260 280 300 320 340 360 380 400 0.01 0.1 1 Peak Half Sine Wave On-state Current (A) Pulse Train Duration (s) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Per Junction Initial T = 125 C No Voltage Reapplied Rated V ReappliedRRM J Fig. 1 - Current Rating Characteristics Fig. 2 - On-state Voltage Drop Characteristics 100 110 120 130 0 1 02 03 04 05 0 Maximum All owabl e Case Temper ature ( C) Total Output Current (A) 120 (Rect) R (DC) = 0.32 K/WthJC Fig. 3 - Maximum Non-Repetitive Surge Current Fig. 4 - Maximum Non-Repetitive Surge Current 100 120 140 0 1 02 03 04 05 0 Total Output Current (A) Maxi mum Total Power Loss (W) 120 (Rect) T = 125 CJ Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)

Bulletin I27600 rev. C 11/00 0.1 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) Rectangular gate pulse (4) (3) (2) (1) (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) TJ = -40 C TJ = 25 C TJ = 125 C a)Recommended load line for b)Recommended load line for VGD IGD Frequency Limited by PG(AV) rated di/dt: 20 V, 30 ohms tr = 0.5 s, tp >= 6 s <= 30% rated di/dt: 20 V, 65 ohms tr = 1 s, tp >= 6 s Fig. 6 - Thermal Impedance Z thJC Characteristics 0.1 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) thJCTransient Therm al Im pedance Z (K/W ) Steady State Value R per junction = 1.9 K/W DC Operation) thJC Fig. 7 - Gate Characteristics

Bulletin I27600 rev. C 11/00 EUROPEAN HEADQUARTERS:Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice