FMMT459_05 ZETEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
■ 6V reverse blocking capability ■ Low saturation voltage - 90mV @ 50mA ■ Hfe /H11022 50 @ 30 mA ■ IC=150mA continuous ■ SOT23 package with Ptot 625mW ■ Specification can be supplied in other package outlines
Applications
■ Electronic test equipment ■ Offline switching circuits ■ Piezo actuators ■ RCD circuits
Ordering information
(inches) Tape width (mm) Quantity per reel FMMT459TA 7 8 3,000 FMMT459TC 13 8 10,000 Pin out - top view
Issue 5 - August 2005 2 www.zetex.com © Zetex Semiconductors plc 2005 Absolute maximum ratings Thermal resistance Parameter Symbol Limit Unit Collector-base voltage V CBO 500 V Collector-emitter voltage V CEV 500 V Collector-emitter voltage V CEO 450 V Emitter-base voltage V EBO 6V Emitter-collector voltage V ECV 6V Peak pulse current I CM 0.5 A Continuous collector current* IC 0.15 A Base current I B 0.2 A Power dissipation @ TA=25°C* Linear derating factor PD 625 mW mW/°C Power dissipation @ TA=25°C† Linear derating factor PD 806 6.4 mW mW/°C Operating and storage temperature range T j:Tstg -55 to +150 Parameter Symbol Value Unit Junction to ambient* NOTES: * For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions R/H9052JA 200 °C/W Junction to ambient† † as above measured at t<5secs. R/H9052JA 155 °C/W
Issue 5 - August 2005 3 www.zetex.com © Zetex Semiconductors plc 2005 Thermal characteristics 100m 1 10 100 10m 100m Single Pulse T amb=25°C 100µs 1ms 10ms 100ms DC Safe Operating Area IC Collector Current (A) VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150 200 Transient Thermal Im pedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s)
Issue 5 - August 2005 4 www.zetex.com © Zetex Semiconductors plc 2005 Electrical characteristics (at Tamb = 25°C unless otherwise stated) Note: For high voltage applications, the approp riate industry sector guidelines should be considered with regards to voltage spacing between Terminals. Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 500 700 V I C = 100/H9262A Collector-emitter breakdown voltage BVCEV 500 700 V I C = 10/H9262A, 0.3V > VBE > -1V Collector-emitter breakdown voltage BVCEO 450 500 V IC = 10mA* Emitter-base breakdown voltage BVEBO 68 . 1 V I E = 100/H9262A Emitter-base breakdown voltage (reverse blocking) BV ECV 68 . 1 V I C = 1/H9262A, 0.3V > VBC > -6V Collector-emitter cut-off current ICES 100 nA V CE=450V Collector-base cut-off current ICBO 100 nA V CB=450V Emitter-base cut-off current IEBO 100 nA V EB=5V Static forward current transfer ratio HFE 50 120 IC = 30mA, VCE = 10V IC = 50mA*, VCE = 10V Collector-emitter saturation voltage VCE(sat) 60 mV mV IC = 20mA, IB = 2mA* IC = 50mA, IB = 6mA* NOTES: * Measured under pulsed conditions. Pulse width = 300 /H9262s; duty cycle <2% Base-emitter saturation voltage VBE(sat) 0.76 0.9 V IC = 50mA, IB = 5mA* Base-emitter turn-on voltage VBE(on) 0.71 0.9 V IC = 50mA, VCE = 10V* Transition frequency f T 50 MHz I C = 10mA, VCE = 20V f = 20MHZ Output capacitance C obo 5 PFV CB = 20V, f = 1MHZ Turn-on time t (ON) 113 ns I C = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA Turn-off time t (OFF) 3450 ns I C = 50mA, VC = 100V IB1 = 5mA, IB2 = 10mA
Issue 5 - August 2005 5 www.zetex.com © Zetex Semiconductors plc 2005
Electrical characteristics
0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 1m 10m 100m0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 0.4 0.6 0.8 1.0 1m 10m 100m 0.4 0.6 0.8 1.0 120 150 180 210 VCE(SAT) v IC Tamb=25°C IC/IB=50 IC/IB=20 IC/IB=10 VCE(SAT) (V) IC Collector Current (A) VBE(SAT) v IC IC/IB=20 100°C 25°C -55°C VCE(SAT) (V) IC Collector Current (A) hFE v IC VCE=10V -55°C 25°C 100°C Normalised Gain IC Collector Current (A) 25°C VCE(SAT) v IC IC/IB=20 100°C -55°C VBE(SAT) (V) IC Collector Current (A) VBE(ON) v IC VCE=10V 100°C 25°C -55°C VBE(ON) (V) IC Collector Current (A) Typical Gain (hFE)
Issue 5 - August 2005 6 www.zetex.com © Zetex Semiconductors plc 2005 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Packaging details - SOT23 Package dimensions Dimensions in inches are control dimensions, dimensions in millimeters are approximate. Dim. Millimeters Inches Dim. Millimeters Inches L N H G A C F BM K D 3 leads