4546

4546 VBSEMI | Alldatasheet

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Technical content

N-Channel 40-V (D-S) MOSFET

FEATURES

• Halogen-free Acc ording to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  100 % R g Tested  100 % UIS Tested  Compl iant to RoHS directive 2002/95/EC

APPLICATIONS

 Synchronous Rectification  P OL, IBC - Secondary Side PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) 0.012 at VGS = 10 V 12 15 nC 0.012 at VGS = 4.5 V 9 D S D D G D SO-8 Top View 1 S S N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 boa rd. b. t = 10 s. c. Maximum und er Steady State conditions is 85 °C/W. d. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, un less otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 8 TA = 25 °C 12.4a, b TA = 70 °C 8.8a, b Pulsed Drain Current IDM 50 Avalanche Current L = 0.1 mH IAS 15 Avalanche Energy EAS 11 mJ Continuous Source-Drain Diode Curren t TC = 25 °C IS 5 ATA = 25 °C 2.1a, b Maximum Po wer Dissipation TC = 25 °C PD WTC = 70 °C 3.8 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and S torage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symb ol Typical Maximu m Unit Maximum Junction-to-Ambienta, c t ≤ 10 s RthJA 37 50 °C/WMaximum Junction-to-F oot (Drain) Steady State RthJF 17 21 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 4546 A ll datasheet.com

Notes: Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbo l Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 40 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 40 mV/° C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6 Gate-Source Threshold V oltage VGS(th) VDS = VGS , ID = 250 µA 13 V Gate-So urce Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 n A Z ero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 µAVDS = 40 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) V DS ≥ 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 12.4 A 0.010 ΩVGS = 4.5 V, ID = 10.8 A 0.012 Forward Tra nsconductancea gfs VDS = 15 V, ID = 12.4 A 56 S Dynamicb Input Capacitance Ciss VDS = 20 V, VGS = 0 V, f = 1 MHz 2000 pFOutput Capacitance Coss 260 Reverse Tr ansfer Capacitance Crss 150 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 12.4 A 33 50 nC VDS = 10 V, VGS = 4.5 V, ID = 12.4 A 15 23 Gate-S ource Charge Qgs 6.7 Gate-Drain Charg e Qgd 5.1 Gate Resista nce Rg f = 1 MHz 1.4 2.1 Ω Tur n-On Delay Time td(on) VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 25 4 0 ns Rise Time tr 12 20 Turn -Off Delay Time td(off) 25 40 Fall Time tf 10 15 Turn -On Delay Time td(on) VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 10 15 Rise Time tr 15 25 Turn -Off Delay Time td(off) 30 45 Fall Time tf 10 15 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 30 A Pulse Diode Forw ard Current ISM 50 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Reco very Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Rev erse Recovery Charge Qrr 26 52 nC Rev erse Recovery Fall Time ta 17.5 ns Reverse Recove ry Rise Time tb 12.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

STICS 25 °C, unless otherwise noted Output Characteristics On-Re sistance vs. Drain Current and Gate Voltage Gate Charge 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 5 V - Drain Current (A)ID 4 V 3 V 0.004 0.009 0.014 0.019 0.024 0 1 02 03 04 05 0 ID - Drain Current (A) - On-Resistance (Ω)RDS(on) VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 30 35 VDS = 20 V ID = 12.4 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfe r Characteristics Capacitance On-Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) 2.5 3.0 3.5 - Drain Current (A)ID TC = 125 °C TC = 25 °C TC = - 55 °C 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 35 40 Coss Ciss VDS - Drain-to-Source V oltage (V) C - Capacitance (pF) Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 12.4 A TJ - Junction Temperature (°C) RDS(on) - On-Resistance (Normalized) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diod e Forward Voltage Threshold Voltage VSD - Source-to-Drain Voltage (V) 8 1.0 1.2 TJ = 25 °C - Source Current (A)IS TJ = 150 °C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)V GS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Sin gle Pulse Power (Junction-to-Ambient) VGS - Gate-to-Source Voltage (V) 0.000 0.005 0.010 0.015 0.020 0.025 0.030 02468 1 0 - On-Resistance (Ω)RDS(on) 125 °C 25 °C ID = 12.4 A Power (W) Time (s) 1 60010 0.10.001 1000.01 Safe Operating Area, Jun ction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimu m VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 - Drain Current (A)ID 0.1 TA = 25 °C Single Pulse DC 10 s Limited byR DS(on)* 1m s BVDSS Limited 100 µs 10 ms 100 ms E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

STICS 25 °C, unless otherwise noted * The power dissipat ion PD is based on T J(max) = 150 °C, using junctio n-to-case th ermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Trans ient Impedance, Junction-to-Ambient 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wav e Pulse Duration (s) Normalized Effectiv e Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68 °C/W 3. TJM - T A = PDMZthJA(t) Notes: 4. Surface Mounted PDM Normalized Th ermal Transient Impedance, Junction-to-Foot 10-3 10-2 1010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wav e Pulse Duration (s) Normalized Effectiv e Transient Thermal Impedance E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.5 1 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 °8 °0 °8 ° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 431 2 568 7 HE h x 45 C All Leads q 0.101 mm 0.004"LBA 1 A e D 0.25 mm (Gage Plane) SOIC (NARROW): 8-LEAD JEDEC Part N umber: MS-012 S E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

RECOMMENDED MINIMUM PADS FOR SO-8 0.246 (6.248) Recommended Minimum Pads Dimensions in Inches/(mm) 0.172 (4.369) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) Return to Index E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw 3413 A ll datasheet.com