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Technical content

Features

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • Press-fit pins as auxiliary contacts
  • Current sensing shunt resistor
  • UL recognized, file no. E63532 Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Renewable energy systems Remarks
  • Product reliability results are valid for Tj=150°C
  • V isol between temperature sensor and power section is only 2500V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES Tj =2 5° C 1200 V IC Tj = 175 °C Tc =2 5° C 678 A Tc =8 0° C 521 A ICnom 450 A ICRM ICRM = 3xICnom 1350 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V Tj =1 5 0° C 10 µs Tj -40 ... 175 °C Inverse diode VRRM Tj =2 5° C 1200 V IF Tj = 175 °C Tc =2 5° C 578 A Tc =8 0° C 433 A IFnom 450 A IFRM IFRM = 3xIFnom 1350 A IFSM tp = 10 ms, sin 180°, Tj =2 5° C 2430 A Tj -40 ... 175 °C Module It(RMS) 294 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT V CE(sat) IC =4 5 0A VGE =1 5V chiplevel Tj =2 5° C 1.80 2.05 V Tj =1 5 0° C 2.19 2.40 V VCE0 chiplevel Tj =2 5° C 0.8 0.9 V Tj =1 5 0° C 0.7 0.8 V rCE VGE =1 5V chiplevel Tj =2 5° C 2.2 2.6 m Ω Tj =1 5 0° C 3.3 3.6 m Ω VGE(th) VGE=VCE, IC =1 8m A 5 5 . 8 6 . 5 V ICES VGE =0V VCE = 1200 V Tj =2 5° C 5m A Tj =1 5 0° C mA Cies VCE =2 5V VGE =0V f=1M H z 27.9 nF Coes f=1M H z 1.74 nF Cres f=1M H z 1.53 nF QG VGE = - 8 V...+ 15 V 2550 nC RGint Tj =2 5° C 1.67 Ω td(on) VCC = 600 V IC =4 5 0A VGE = +15/-15 V RG on =1 . 1Ω RG off =1 . 1Ω di/dton = 6600 A/µs di/dtoff =3 4 0 0A / µ s du/dt = 4800 V/µs L s =2 1n H Tj =1 5 0° C 195 ns tr Tj =1 5 0° C 67 ns Eon Tj =1 5 0° C 33 mJ td(off) Tj =1 5 0° C 505 ns tf Tj =1 5 0° C 110 ns Eoff Tj =1 5 0° C 57 mJ Rth(j-c) per IGBT 0.066 K/W Rth(c-s) per IGBT (λgrease=0.81 W/(m*K)) 0.03 K/W Rth(c-s) per IGBT, pre-applied phase change material 0.021 K/W

2 Rev. 4.0 – 27.05.2015 © by SEMIKRON SEMiX® 3p shunt GB + shunt Trench IGBT Modules SEMiX453GB12E4Ip

  • Homogeneous Si
  • Trench = Trenchgate technology CE(sat) with positive temperature coefficient
  • High short circuit capability
  • Press-fit pins as auxiliary contacts
  • Current sensing shunt resistor
  • UL recognized, file no. E63532 Typical Applications*
  • A C i n v e r t e r d r i v e s
  • U P S
  • Renewable energy systems Remarks
  • Product reliability results are valid for Tj=150°C
  • V isol between temperature sensor and power section is only 2500V Characteristics Symbol Conditions min. typ. max. Unit Inverse diode VF = VEC IF = 450 A VGE =0V chiplevel Tj =2 5° C 2.14 2.46 V Tj =1 5 0° C 2.07 2.38 V VF0 chiplevel Tj =2 5° C 1.1 1.3 1.5 V Tj =1 5 0° C 0.7 0.9 1.1 V rF chiplevel Tj =2 5° C 1.4 1.9 2.1 m Ω Tj =1 5 0° C 2.3 2.6 2.8 m Ω IRRM IF = 450 A di/dtoff =6 8 0 0A / µ s VGE =- 1 5V VCC = 600 V Tj =1 5 0° C 455 A Qrr Tj =1 5 0° C 85 µC Err Tj =1 5 0° C 39 mJ Rth(j-c) per diode 0.1 K/W Rth(c-s) per diode (λgrease=0.81 W/(m*K)) 0.045 K/W Rth(c-s) per diode, pre-applied phase change material 0.036 K/W Module LCE 20 nH RCC'+EE' res. terminal-chip, shunt excluded TC =2 5° C 1.2 m Ω TC =1 2 5° C 1.65 m Ω Rth(c-s)1 calculated without thermal coupling 0.009 K/W Rth(c-s)2 including thermal coupling, Ts underneath module (λgrease=0.81 W/ (m*K))

0.014 K/W

Rth(c-s)2 including thermal coupling, Ts underneath module, pre-applied phase change material

0.011 K/W

M s to heat sink (M5) 3 6 Nm Mt to terminals (M6) 36 N m Nm w 350 g Temperature Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω ±2% K Characteristics Symbol Conditions min. typ. max. Unit Shunt IShunt Tc = 100 °C, TShunt,max =1 7 0° C , Rth =2 . 9K / W 294 A RShunt Tolerance = ±1 % 0.29 m Ω α 50 ppm/K

© by SEMIKRON Rev. 4.0 – 27.05.2015 3 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic

4 Rev. 4.0 – 27.05.2015 © by SEMIKRON Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge

© by SEMIKRON Rev. 4.0 – 27.05.2015 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staf f. SEMiX 3p shunt pinout