448IRF

448IRF IRF | Alldatasheet

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International PD-9.5O5A HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated D ¢ Isolated Central Mounting Hole Vpss = 500V © Fast Switching * Ease of Paralleling 6 Rogion) = 0-602 © Simple Drive Requirements s Ip=11A

Description

Third Generation HEXFETS from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-tesistance and cost-effectiveness, The TO-247 package is preferred for commercialindustrial applications EG where higher power levels preclude the use of TO-220 devices. The TO-247 \\ ora is similar but superior to the earlier TO-218 package because of its isolated WYO mounting hole. It also provides greater creepage distance between pins to \\ YQ meet the requirements of most safety specifications. Ny TO-247AC Absolute Maximum Ratings __ Parameter Max. _ Units lo @ Tc = 25°C Continuous Drain Current, Vas @ 10 V | WW lo@ Te = 100°C _| Continuous Drain Current, Vas @ 10 V ee ee fom Pulsed Drain Current © [ a | Po @ Te=25°C_| Power Dissipation 480 w [___finear Derating Faclor 14 wre Ves Gate-to-Source Voltage | +20 v Exs___| Single Pulse Avalanche Energy ® 550 tag [Avalanche Current © AL Ena Repetitive Avalanche Energy © 18 md Ts Operating Junction and “55 to +150 Tsre_____|Storage Temperature Range | ; } sc | ______|Soldering Temperature, for 10 seconds | __300 (1.6mm from case) | Mounting Torque, 6-32 or M3 screw t 10 Ibfain (1.1 Nem) Thermal Resistance oe Parameter (Min. | Typ. | Max, | Units Raxe Junction-to-Case {= = | 070 Pcs Case-to-Sink, Flat, Greased Surface = 024 — | °cwW Raa ___| Junction-to-Ambient i = = 40 1013

Gl i 5° ee Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter TT Min. | typ. Tax. [unis | Test Conditions [Mienyoss _[Drain-to-Source Breakdown Voltage | 600 [ — | — | V_|Vas=0V,lo= 250uA [AVionoss/AT,[ Breakdown Voltage Temp. Goeffcient_| — [0.60] — | iC [Reference to 25°C, n= imA_| [Rosion [Static Drain-to-Source On-Resistance | — | — [0.60 | @ | Vas=10V, Ip=6.6A © Vestn Gate Threshold Voltage 20) — | 40 | V_|Vos=Vas, lp= 2500A oe Forward Transconductance [67] — | — | S |Vps=50V, Ip=6.6A © loss Draio-Souce estage Curent [= | 25] yy MeeeS00Y Voscey—— = | = | 250 | [i __[eswtesore reer oars [= [= eet * NEES Gate-to-Source Reverse Leakage (| — | — | jQp [Total Gate Charge TT 'o=9.68 [Qn TGate-to-Source Charge | | — | 84 | nC | Vos=a00v [Qos |Gate-to-Drain ("Miller") Charge | — | = [50 Vas=10V See Fig. 6 and 13. [aon | Turn-On DelayTime = te TT Voo=250V . [eT Rise Time a0 Io=9.6A : [tou Tum-Off DelayTime | | 2 | — | Ro=7.80. [i Faitine ee Ro=270 See Figure 10 ® i nemetonione = ae = | cd nH | from package ds Ls Intemal Source Inductance — | 13 [ - | and center of 3) die contact i or [input Capacitance | 900 — | Vos=0V [Cos TOutput Capacitance | | 490 | —) PF | Vos 25V [Cus [Reverse Transfer Capacitance | — | 220 | |__| fat oMHz See Figure 5 Source-Drain Ratings and Characteristics 1s Continuous Source Current Poy lay MOSFET symbol p (Body Diode) showing the ) | (Body Diode) © ii p-n junction diode. 's Vso tr Reverse Recovery Time [| — | 480 [1100] ns_|7.=25°C, k=9.6A Grrr Resseycnape T= LSet [pe lacrnae to Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Leen) Notes: © Repetitive rating; pulse width limited by @ Isps11A, difdts120A/us, VoosVieryoss, max. junction temperature (See Figure 11) Tus150°C ® Von=50V, starting Ty=25°C, L=8.2mH @® Pulse width < 300 us; duty cycle <2%. Ra=252, las=11A (See Figure 12) 1014

EE —= - aT er ELT | AA q foil Tas an i ann Z| E jf E a Ph <i Act TT i ee eh | ¢ ft — z 7, —— Anse | § fee AR im & - OAS 5 ann” a1 a ss Aas Eo AE e c ' F ALi rH of COA aero 3 (AU . Te = 150°C ied “or ra ar Fa 53 Vps; Drain-to-Source Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics, To=25°C . Tc=150°C 4S gs “Re=TTTTTTyTy4 a a Oa sb Se a El Se eesseeeeece Stee seeeees 8a EEEEREEH & EASE eee é ae a a ee PAPER)? EEE § > (oer 4 —F 6 VOCE errr 2 ober terre eo a mes ~ gz —— SESE eo 8 EEE ERE P Efe Ves, Gate-to-Source Voltage (volts) Ty, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 1015

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TTT Se LL eerie se | . Vos, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) , Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage a ote Cea 8 fee eee = ESP AT set sa OE hc NS | SSS L 2 ACT TT =150%° it LLL TET | Yes * Ov 9 COUT he Fa seh Vso, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage

Ves (3) ur. NEE m “i on SGGennee < XN + &. aaNG Fig 10a. Switching Time Test Circuit gL NS ‘oe si titi tN | m—\\ ‘ HEEL TEL EY Pitti tt _ Ee rr a | Val i Ee To, Case Temperature (°C) ‘ejon) en Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature eyecare e— i eee ema denen sews | | 3 a Sail

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Q Poo Za | a | c oi SINGLE PULSE Oe ei etree A jars oe eeenen Oenrenmeeel! Oo enone Eee oe 7 Flee sere Sesh Secs ect eet oe * Peal 1 A pe ee 19° 104 10° 10° on 1 410 ti, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case ‘ov

IRFP448 [TER] L Vary tpto obtain YDS. i required las DUT. 1200, CI elas) |. Kee Yoo 5 wo \\ 14 € [XT @ vs Soh NP PPT is BIN EEE ¥ oL IN Fig 12a. Unclamped Inductive Test Circuit a “ SS QNsEaaEs wtp ao I 7 voo 2 200 HSS tH Ww | . INZ je FESS 8s / \\ ne er er) / \\ Starting Ty, Junction Temperature(°C) hs — — — ——-- Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current og Suttant Regulator Sine yo BUT “Py i ' sone (53) wa L-ebeseseees Woe our la (me Ves ul Doin | Gage home curiam Sanping Resmrs Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1511 ix C: tion — 1517 i Appendix C: Part Marking Information — See page 15 International Rectifier ‘018