FDS4435BZ_07 FAIRCHILD | Alldatasheet
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Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A Extended VGSS range (-25V) for battery applications HBM ESD protection level of ±3.8KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Termination is Lead-free and RoHS compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench ® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. MOSFET Maximum Ratings TA = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -30 V VGS Gate to Source Voltage ±25 V ID Drain Current -Continuous TA = 25°C (Note 1a) -8.8 A -Pulsed -50 PD Power Dissipation TA = 25°C (Note 1a) 2.5 WPower Dissipation TA = 25°C (Note 1b) 1.0 EAS Single Pulse Avalanche Energy (Note 4) 24 mJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units G S SS D D D D Pin 1 SO-8 8 1 G S S S D D D D
FDS4435BZ P-Channel PowerTrench® MOSFET www.fairchildsemi.com2©2007 Fairchild Semiconductor Corporation FDS4435BZ Rev.C Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -21 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -2.1 -3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 6 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -10V, ID = -8.8A 16 20 mΩVGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 gFS Forward Transconductance VDS = -5V, ID = -8.8A 24 S Dynamic Characteristics Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1MHz 1385 1845 pF Coss Output Capacitance 275 365 pF Crss Reverse Transfer Capacitance 230 345 pF Rg Gate Resistance f = 1MHz 4.5 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6Ω 10 20 ns tr Rise Time 6 12 ns td(off) Turn-Off Delay Time 30 48 ns tf Fall Time 12 22 ns Qg Total Gate Charge VGS = 0V to -10V VDD = -15V, ID = -8.8A 28 40 nC Qg Total Gate Charge VGS = 0V to -5V 16 23 nC Qgs Gate to Source Charge 5.2 nC Qgd Gate to Drain “Miller” Charge 7.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2) -0.9 -1.2 V trr Reverse Recovery Time IF = -8.8A, di/dt = 100A/µs 29 44 ns Qrr Reverse Recovery Charge 23 35 nC NOTES: the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad of 2 oz copper.
Figure 13. Single Pulse Maximum Power Dissipation
150 T A–
Figure 14. Transient Thermal Response Curve
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