CEM4410A CET | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor | | FEATURES © 30V,10A, Roscony=11mQ @Ves=10V. Rosion=20m2._~—s @Ves=4.5V. D D Super high dense cell design for extremely low Rosion). [ [ Jf High power and current handing capability. (o-) Surface mount Package. eZ BQ [ T ] = 4] SO-8 Ss S S G ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Drain Current-Continuous* @Tu=125°C |» | sw | a | -Pulsed” Drain-Source Diode Forward Current * Operating Junction and Storage T, Ts1G -55 to 150 °¢ Temperature Range , THERMAL CHARACTERISTICS 5-2
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a.Surface Mounted on FR4 Board, t <10sec. bPulse Test:Pulse Width <300 vs, Duty Cycle < 2%.
25 T T 50 yy
Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. On-Resistance Variation with
28 ET TTT AN eB per |
58 ETT TTT TIN | & od
Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
2 LT € ERAS EEE ASE
Figure 9. Gate Charge Figure 10. Maximum Safe